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6R3R15X475MV4E

型号：

6R3R15X475MV4E

品牌：

JOHANSON[ JOHANSON TECHNOLOGY INC. ]

页数：

2 页

PDF大小：

234 K

下载PDF手册
®
Tanceram  
chip  
capaciTors  
TANCERAM® chip capacitors can replace tantalum capacitors  
in many applications and offer several key advantages over  
traditional tantalums. Because Tanceram® capacitors exhibit  
extremely low ESR, equivalent circuit performance can often  
be achieved using considerably lower capacitance values.  
Low DC leakage reduces current drain, extending the battery  
life of portable products. Tancerams® high DC breakdown  
voltage ratings offer improved reliability and eliminate large  
voltage de-rating common when designing with tantalums.  
A
dvAntAges  
• Low ESR  
• Low DC Leakage  
• Higher Surge Voltage  
• Reduced CHIP Size  
• Non-polarized Devices  
• Improved Reliability  
• Higher Insulation Resistance • Higher Ripple Current  
A
pplicAtions  
• Switching Power Supply Smoothing (Input/Output)  
• Backlighting Inverters  
• DC/DC Converter Smoothing (Input/Output)  
• General Digital Circuits  
Typical ESR Comparison  
Typical Breakdown Voltage Comparison  
10  
100%  
1.0 μF / 16V  
Tantalum  
75%  
1.0 μF / 16V Tantalum  
1
50%  
1.0 μF / 16V TANCERAM   
1.0 μF / 16V TANCERAM   
0.1  
25%  
0%  
0.01  
0.001  
0
100  
200  
300  
400  
500  
0.01  
0.1  
1
10  
100  
DC Breakdown Voltage  
Frequency (MHz)  
How to  
o
rder tAncerAM®  
Part number written: 100R15X106MV4E  
100  
R15  
X
106  
M
V
4
E
VOLTAGE  
SIZE  
DIELECTRIC  
CAPACITANCE  
TOLERANCE  
TERMINATION  
MARKING  
PACKING  
Code  
Type Reel  
Plastic 7”  
Paper 7”  
6R3 = 6.3 V  
100 = 10 V  
160 = 16 V  
250 = 25 V  
500 = 50 V  
101 = 100 V  
See Chart  
W = X7R  
X = X5R  
1st two digits are  
significant; third digit  
denotes number of  
zeros.  
K = 10ꢀ  
M = 20ꢀ  
V = Nickel Barrier  
with 100ꢀ Tin  
Plating (Matte)  
4 = Unmarked  
E
T
Tape specifications  
conform to EIA RS481  
T = SnPb*  
(*available on  
select parts)  
105 = 1.00 µF  
476 = 47.0 µF  
107 = 100 µF  
18  
www.johansondielectrics.com  
®
Tanceram  
chip  
capaciTors  
cAse  
size  
cApAcitAnce  
selection  
EIA / JDI  
Inches  
(mm)  
VDC  
1.0 µF  
2.2 µF  
3.3 µF  
4.7 µF  
10 µF  
22 µF  
47 µF  
100 µF  
L
.040 .004  
.020 .004  
.025 Max.  
(1.02 .10)  
(0.51 .10)  
(0.64)  
16  
10  
6.3  
25  
16  
10  
0402  
R07  
W
W
L
T
DIELECTRIC  
EB .008 .004  
(0.20 .10)  
W (X7R)  
X (X5R)  
T
E/B  
L
W
.063 .008  
.032 .008  
.035 Max.  
.010 .005  
(1.60 .20)  
(0.81 .20)  
(0.89)  
0603  
R14  
T
EB  
(.25 .13)  
6.3  
50  
L
W
.080 .010  
.050 .010  
.060 Max.  
.020 .010  
(2.03 .25)  
(1.27 .25)  
(1.52)  
25  
16  
10  
6.3  
100  
50  
0805  
R15  
T
EB  
(0.51 .25 )  
L
W
T
.125 .013  
.062 .010  
.070 Max.  
(3.17 .35)  
(1.57 .25)  
(1.78)  
35  
25  
16  
10  
1206  
R18  
EB .020 ꢁ.015-0.01 (0.51ꢁ.38-.25)  
6.3  
100  
50  
L
W
T
.126 .016  
.098 .012  
.110 Max.  
(3.20 .40)  
(2.50 .30)  
(2.8)  
35  
25  
16  
10  
1210  
S41  
EB .020 ꢁ.015-.010 (0.51ꢁ.38-.25)  
6.3  
100  
50  
25  
16  
L
W
.177 .016  
.126 .012  
.140 Max.  
.035 .020  
(4.50 .40)  
(3.20 .30)  
(3.55)  
1812  
S43  
T
EB  
(0.89 0.51)  
10  
6.3  
W
X
W
X
W
X
W
X
W
X
W
X
W
X
W
X
electricAl  
cHArActeristics  
Dielectric:  
X7R  
X5R  
Temperature Coefficient:  
Dissipation Factor:  
15ꢀ (-55 to ꢁ125ꢂC)  
15ꢀ (-55 to ꢁ85ꢂC)  
For ≥ 50 VDC: 5ꢀ max.  
For ≤ 25 VDC: 10ꢀ max.  
For ≥ 50 VDC: 5ꢀ max.  
For ≤ 25 VDC: 10ꢀ max.  
Insulation Resistance (Min. @ 25°C, Wvdc)  
Dielectric Strength:  
100 ΩF or 10 GΩ, whichever is less  
2.5 X WVDC, 25ꢂC, 50mA max.  
Capacitance values ≤ 22 µF: 1.0kHz 50Hz ꢃ 1.0 0.2 Vrms  
Test Conditions:  
Other:  
Capacitance values > 22 µF: 120Hz 10Hz ꢃ 0.5V 0.1 Vrms  
See page 35 for additional dielectric specifications.  
19  
www.johansondielectrics.com  
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