IXSP 24N60B
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-220 Outline
IC = IC90; VCE = 10 V,
9
13
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
1450
130
37
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
Qg
41
18
18
nC
nC
nC
Qge
Qgc
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
td(on)
tri
td(off)
tfi
50
50
ns
ns
150
170
1.3
250 ns
300 ns
2.6 mJ
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = 33 Ω
Eoff
td(on)
tri
55
75
ns
ns
Inductive load, TJ = 125°C
Eon
td(off)
tfi
1.2
190
280
2.4
mJ
ns
ns
IC = IC90, VGE = 15 V,
VCE = 0.8 VCES, RG = 33 Ω
Eoff
mJ
RthJC
RthCK
0.83 K/W
K/W
0.25
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
