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HZU_GSERIES

型号:

HZU_GSERIES

品牌:

ETC[ ETC ]

页数:

5 页

PDF大小:

65 K

HZU-G Series  
S Silicon Epitaxial Planar Zener Diode for Surge Absorb  
ADE-208-617A (Z)  
Rev.1  
Nov. 2001  
Features  
Zener diode for surge absorb suitable for IEC 1000-4-2 and 5 to 10V products are arailable.  
Ultra small Resin Package (URP) is suitable for surface mount design.  
Ordering Information  
Type No.  
Mark  
Package Code  
HZU-G Series  
Let to Mark Code  
URP  
Pin Arrangement  
Cathode mark  
Mark  
1
2
51  
1. Cathode  
2. Anode  
HZU-G Series  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Pd *1  
Tj  
Value  
200  
Unit  
mW  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Note: 1. See Fig2  
150  
Tstg  
–55 to +150  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Zener voltage  
Test  
Reverse current  
Test  
Dynamic resistance ESD-Capability  
Test  
VZ (V)*1  
Min  
Condition IR (µA)  
Condition rd ()  
Condition  
— (kV)*2  
Min  
30  
Type  
Max  
5.37  
5.92  
6.53  
7.14  
7.84  
8.64  
9.55  
10.55  
12.60  
IZ (mA)  
Max  
5
VR (V)  
1.5  
2.5  
3.0  
3.5  
4.0  
5.0  
6.0  
7.0  
9.0  
Max  
130  
80  
IZ (mA)  
HZU5.1G  
HZU5.6G  
HZU6.2G  
HZU6.8G  
HZU7.5G  
HZU8.2G  
HZU9.1G  
HZU10G  
HZU12G  
4.84  
5.31  
5.86  
6.47  
7.06  
7.76  
8.56  
9.45  
11.42  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
30  
2
50  
30  
2
30  
30  
2
30  
30  
2
30  
30  
2
30  
30  
2
30  
30  
2
35  
30  
Notes: 1. Tested with pulse (Pw = 40 ms).  
2. C =150 pF, R = 330 , Both forward and reverse direction 10 pulse  
Failure criterion ; According to IR spec  
Mark Code  
Type  
MarK No.  
Type  
Mark No.  
HZU5.1G  
HZU5.6G  
HZU6.2G  
HZU6.8G  
HZU7.5G  
51  
56  
62  
68  
75  
HZU8.2G  
HZU9.1G  
HZU10G  
HZU12G  
82  
91  
10  
12  
Rev.1, Nov. 2001, page 2 of 5  
HZU-G Series  
Main Characteristic  
10-2  
10-3  
10-4  
10-5  
10-6  
10-7  
10-8  
10-9  
10-10  
10-11  
HZU5.1G  
HZU5.6G  
HZU7.5G  
HZU8.2G  
HZU6.2G  
HZU6.8G  
HZU9.1G  
HZU10G  
HZU12G  
0
2
4
6
8
10  
12  
Zener Voltage VZ (V)  
Fig.1 Zener current vs. Zener voltage  
250  
200  
150  
100  
50  
Polyimide board  
20hx15wx0.8t  
1.5  
1.5  
unit: mm  
0
0
50  
Ambient Temperature Ta (°C)  
Fig.2 Power Dissipation vs. Ambient Temperature  
100  
150  
200  
Rev.1, Nov. 2001, page 3 of 5  
HZU-G Series  
Package Dimensions  
As of July, 2001  
Unit: mm  
1.7 0.15  
2.5 0.15  
Hitachi Code  
JEDEC  
URP  
JEITA  
Mass (reference value)  
0.004 g  
Rev.1, Nov. 2001, page 4 of 5  
HZU-G Series  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
http://www.hitachisemiconductor.com/  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe Ltd.  
Hitachi Asia Ltd.  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
Electronic Components Group  
Hitachi Tower  
179 East Tasman Drive Whitebrook Park  
16 Collyer Quay #20-00  
Singapore 049318  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://semiconductor.hitachi.com.sg  
San Jose,CA 95134  
Lower Cookham Road  
World Finance Centre,  
Tel: <1> (408) 433-1990 Maidenhead  
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://semiconductor.hitachi.com.hk  
Fax: <44> (1628) 585200  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Straße 3  
D-85622 Feldkirchen  
Postfach 201, D-85619 Feldkirchen  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.  
Colophon 5.0  
Rev.1, Nov. 2001, page 5 of 5  
厂商 型号 描述 页数 下载

RENESAS

HZU-G 硅平面齐纳二极管的浪涌吸收[ Silicon Planar Zener Diode for Surge Absorption ] 5 页

RENESAS

HZU-L 硅平面齐纳二极管的低噪声应用[ Silicon Planar Zener Diode for Low Noise Application ] 6 页

RENESAS

HZU-LL 硅外延平面齐纳二极管的硬拐点低噪声[ Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise ] 7 页

ETC

HZU-LLSERIES [ ] 5 页

RENESAS

HZU10 硅外延平面稳压二极管的稳定器[ Silicon Epitaxial Planar Zener Diodes for Stabilizer ] 11 页

RENESAS

HZU10B 硅外延平面稳压二极管的稳定器[ Silicon Epitaxial Planar Zener Diodes for Stabilizer ] 11 页

HITACHI

HZU10B [ Zener Diode, 10V V(Z), 5.5%, 0.2W, Silicon, Unidirectional, URP, 2 PIN ] 8 页

RENESAS

HZU10B1 硅外延平面稳压二极管的稳定器[ Silicon Epitaxial Planar Zener Diodes for Stabilizer ] 11 页

HITACHI

HZU10B1 [ Zener Diode, 9.66V V(Z), 2.17%, 0.2W, Silicon, Unidirectional, URP, 2 PIN ] 8 页

RENESAS

HZU10B1TLF [ 9.66V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE ] 11 页

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