High Voltage BIMOSFETTM
Monolithic Bipolar
MOS Transistor
IXBJ 40N140 VCES = 1400/1600V
IXBJ 40N160 IC25 = 33 A
VCE(sat) = 7.1 V
tfi
= 40 ns
N-Channel, Enhancement Mode
C
G
E
Symbol
Test Conditions
Maximum Ratings
40N140 40N160
TO-268
VCES
VCGR
TJ = 25°C to 150°C
1400
1400
1600
1600
V
V
G
C
TJ = 25°C to 150°C; RGE = 1 MW
E
C (TAB)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G = Gate
C = Collector
IC25
IC90
ICM
TC = 25°C,
33
20
40
A
A
A
E
= Emitter TAB = Collector
TC = 90°C
TC = 25°C, 1 ms
SSOA
VGE= 15 V, TVJ = 125°C, RG = 22 Ω; VCE = 0.8 VCES
ICM = 40
A
(RBSOA)
Clamped inductive load, L = 100 mH
Features
PC
TC = 25°C
350
W
l
LeadedTO-268package
TJ
-55 ... +150 °C
150 °C
HighVoltageBIMOSFETTM
l
TJM
Tstg
- replaceshighvoltageDarlingtons
and series connected MOSFETs
- lower effective RDS(on)
Monolithicconstruction
- highblockingvoltagecapability
- very fast turn-off characteristics
-55 ... +150 °C
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque
300 °C
l
Md
1.15/10 Nm/lb.in.
l
MOS Gate turn-on
- drive simplicity
Weight
6
g
l
Intrinsicdiode
Applications
Symbol
BVCES
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
IC = 1 mA, VGE = 0 V
IC = 2 mA, VCE = VGE
40N140
40N160
1400
1600
V
V
l
Uninterruptiblepowersupplies(UPS)
l
Switched-modeandresonant-mode
powersupplies
VGE(th)
ICES
4
8
V
l
CRTdeflection
l
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
400 µA
mA
Lampballasts
3
IGES
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
± 500 nA
Advantages
l
VCE(sat)
6.2
7.1
7.8
V
V
Space savings
l
TJ = 125°C
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
98662(10/99)
© 2000 IXYS All rights reserved
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