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IXBF12N300

型号：

IXBF12N300

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

251 K

下载PDF手册
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 3000V  
IC110 = 11A  
VCE(sat) ≤ 3.2V  
IXBF12N300  
(Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
3000  
3000  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
1
2
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
Isolated Tab  
5
IC25  
IC110  
ICM  
TC = 25°C  
26  
11  
98  
A
A
A
1 = Gate  
2 = Emitter  
5 = Collector  
TC = 110°C  
TC = 25°C, 1ms  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 20Ω  
Clamped Inductive Load  
ICM = 98  
1500  
A
V
PC  
TC = 25°C  
125  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z
-55 ... +150  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
z
4000V~ Electrical Isolation  
z
FC  
Mounting Force  
20..120 / 4.5..27  
Nm/lb.in.  
High Blocking Voltage  
z
z
High Peak Current Capability  
Low Saturation Voltage  
VISOL  
Weight  
50/60Hz, 1 Minute  
4000  
5
V~  
g
Advantages  
z
Low Gate Drive Requirement  
High Power Density  
z
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
3000  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
5.0  
25 μA  
mA  
±100 nA  
V
z
Switch-Mode and Resonant-Mode  
Power Supplies  
Capacitor Discharge Circuits  
Uninterrupted Power Supplies(UPS)  
Laser Drivers  
z
Note 2, TJ = 125°C  
1
z
IGES  
VCE = 0V, VGE = ± 20V  
z
z
VCE(sat)  
IC = 12A, VGE = 15V, Note 1  
2.8  
3.5  
3.2  
V
V
AC Switches  
TJ = 125°C  
DS100121C(10/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXBF12N300  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
ISOPLUS i4-PakTM (HV) Outline  
Min.  
Typ.  
Max.  
gfS  
IC = 12A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
6.5  
10.8  
S
Cies  
Coes  
Cres  
1290  
56  
pF  
pF  
pF  
19  
Qg  
62  
13  
nC  
nC  
nC  
Qge  
Qgc  
IC = 12A, VGE = 15V, VCE = 1000V  
8.5  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
64  
140  
180  
540  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
Pin 1 = Gate  
IC = 12A, VGE = 15V  
Pin2 = Emitter  
Pin 3 = Collector  
Tab 4 = Isolated  
VCE = 1250V, RG = 10Ω  
65  
395  
175  
530  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 12A, VGE = 15V  
VCE = 1250V, RG = 10Ω  
RthJC  
RthCS  
1.00 °C/W  
°C/W  
0.15  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
trr  
IF = 12A, VGE = 0V  
2.1  
V
μs  
A
1.4  
21  
IF = 6A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
IRM  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Device must be heatsunk for high temperature leakage current  
measurements to avoid thermal runaway.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBF12N300  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
240  
200  
160  
120  
80  
24  
20  
16  
12  
8
VGE = 25V  
VGE = 25V  
20V  
15V  
20V  
10V  
15V  
10V  
5V  
4
40  
5V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
24  
20  
16  
12  
8
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 25V  
20V  
VGE = 15V  
I C = 24A  
15V  
I C = 12A  
10V  
I C = 6A  
4
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
40  
36  
32  
28  
24  
20  
16  
12  
8
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = 25ºC  
I C = 24A  
TJ = 125ºC  
25ºC  
- 40ºC  
12A  
4
6A  
13  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
5
7
9
11  
15  
17  
19  
21  
23  
25  
VGE - Volts  
VGE - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXBF12N300  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
18  
16  
14  
12  
10  
8
36  
32  
28  
24  
20  
16  
12  
8
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 25ºC  
TJ = 125ºC  
6
4
2
4
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
0
0.5  
1
1.5  
2
2.5  
3
VF - Volts  
IC - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
16  
14  
12  
10  
8
10,000  
1,000  
100  
f = 1 MHz  
VCE = 1kV  
I C = 12A  
I
G = 10mA  
C
ies  
6
C
oes  
4
2
C
res  
0
10  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
aaa  
2
1
100  
80  
60  
40  
20  
0
D = 0.50  
D = 0.20  
D = tp / T  
D = 0.10  
D = 0.05  
0.1  
t
p
T
TJ = 125ºC  
G = 20Ω  
dv / dt < 10V / ns  
D = 0.02  
D = 0.01  
R
Single Pulse  
0.01  
250  
500  
750 1000 1250 1500 1750 2000 2250 2500 2750 3000  
VCE - Volts  
0.000001 0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBF12N300  
Fig. 14. Resistive Turn-on Rise Time vs.  
Collector Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
RG = 10Ω , VGE = 15V  
VCE = 1250V  
RG = 10Ω , VGE = 15V  
VCE = 1250V  
TJ = 125ºC  
I C = 24A  
I C = 12A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
6
8
10  
12  
14  
16  
18  
20  
22  
24  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
800  
700  
600  
500  
400  
300  
200  
200  
190  
180  
170  
160  
150  
140  
750  
700  
650  
600  
550  
500  
450  
400  
350  
300  
250  
150  
t f  
t
d(off) - - - -  
t r  
t
d(on) - - - -  
140  
130  
120  
110  
100  
90  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 12A  
I C = 24A, 12A  
80  
70  
I C = 24A  
60  
50  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Collector Current  
700  
650  
600  
550  
500  
450  
400  
350  
300  
250  
900  
1400  
1200  
1000  
800  
600  
400  
200  
0
340  
t f  
t
t f  
td(off  
) - - - -  
d(off) - - - -  
800  
700  
600  
500  
400  
300  
200  
100  
0
300  
260  
220  
180  
140  
100  
60  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 12A  
I C = 24A  
TJ = 125ºC, 25ºC  
6
8
10  
12  
14  
16  
18  
20  
22  
24  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_12N300(4P)6-07-12-B  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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