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6SI40N12

型号:

6SI40N12

描述:

绝缘栅双极型晶体管( IGBT ),绝缘栅双极型晶体管( IGBT的) , NPT技术的IGBT模块NPT IGBT模块(无穿通技术) 。[ 绝缘栅双极型晶体管(IGBT)Isolated Gate Bipolar Transistor (IGBTs),NPT技术的IGBT模块NPT IGBT Modules (None Punch Through Technology). ]

品牌:

SIRECTIFIER[ SIRECTIFIER SEMICONDUCTORS ]

页数:

2 页

PDF大小:

561 K

6SI40N12  
NPT IGBT Modules  
Dimensions in mm (1mm = 0.0394")  
T C, unless otherwise specified  
= 25o  
C
Absolute Maximum Ratings  
Symbol  
Conditions  
Units  
Values  
IGBT Wechselrichter/ IGBT Inverter  
1200  
55(40)  
80  
V
CES  
V
A
T
C
C
= 25(80)o  
= 80oC, tP =1ms  
C
I
C
ICRM  
T
A
P
tot  
200  
_
+20  
W
V
VGES  
Diode Wechselrichter/ Diode Inverter  
40  
80  
IF  
IFRM  
A
A
A2s  
tP =1ms  
tP =10ms; Tj=150oC  
I2  
t
VR  
=0V,  
320  
IGBT Brems-Chopper/ IGBT Brake-Chopper  
1200  
25(15)  
30  
V
CES  
V
A
T
C
C
= 25(80)o  
= 80oC, tP =1ms  
C
I
C
ICRM  
T
A
P
tot  
100  
_
+20  
W
V
VGES  
Diode Brems-Chopper/ Diode Brake-Chopper  
10  
20  
A
A
IF  
IFRM  
tP =1ms  
Module Isolation/ Module Isolation  
VISOL  
RMS, f=50Hz, t=1min, NTC connect to Baseplate  
2500  
V
R
Sirectifier  
6SI40N12  
NPT IGBT Modules  
T C, unless otherwise specified  
= 25o  
C
Characteristics  
Symbol  
Conditions  
min.  
typ.  
max.  
Units  
IGBT Wechselrichter/ IGBT Inverter  
V
GE(TO)  
5.0  
5.8  
6.5  
5
V
mA  
nA  
m
V
V
V
V
GE = VCE, I =1.5mA  
C
I
CES  
GE = 0; VCE = 1200V  
CE=0; VGE=20V  
I
GES  
400  
GE = 15V, T  
=25A; VGE = 15V; T  
under following conditions  
GE = 0, VCE = 25V, f = 1MHz  
j
= 25(125)o  
= 25(125)o  
C
C
rCE  
14.6(20)18.6(25.3)  
1.7(2.0) 2.15(-)  
V
CE(sat)  
V
IC  
j
Cies  
1.8  
nF  
V
L
CE  
60  
nH  
m
R
CC'+EE'  
7.0  
under following conditions:  
CC = 600V, I  
Gon = RGoff = 27 , , T  
GE = ± 15V  
t
d(on)  
85(90)  
30(45)  
ns  
ns  
ns  
ns  
mJ  
V
C
= INenn  
R
j
= 25(125)o  
C
tr  
t
d(off)  
420(520)  
65(90)  
V
tf  
E
on(Eoff  
)
Tj  
= 125o  
C
5.8(4.9)  
Diode Wechselrichter/ Diode Inverter  
under following condition  
V
F
1.75(1.75) 2.3(-)  
45(46)  
V
A
I
F
= 40A; VGE = 0V; T  
j
= 25(125)o  
C
IF  
= INeen; T  
j
= 25(125)o  
C
IRM  
Q
r
uC  
mJ  
4.4(8.4)  
-di/dt = 1000A/us  
GE = -10V, V =600V  
E
rec  
1.55(3.1)  
V
R
IGBT Brems-Chopper/ IGBT Brake-Chopper  
under following conditions  
= 25(125)o  
C
V
CE sat  
GE(TO)  
ies  
1.7(2.0)  
5.8  
2.15  
6.5  
V
V
I
C
= 15A; VGE = 15V; T  
=0.5mA  
f=1MHz, VCE=25V, VGE=0V  
j
V
V
CE=VGE, I  
C
5.0  
C
1.1  
nF  
mA  
nA  
I
CES  
5.0  
500  
400  
V
V
GE=0V, VCE=1200V  
CE=0V, VGE=20V  
I
GES  
Diode Brems-Chopper/ Diode Brake-Chopper  
T C  
= 25(125)o  
j
V
F
I
F
=15A,  
2.05(2.2)  
2.5  
V
Mechanical Data  
Mounting torque (M5)  
Terminal connection torque (M5)  
2.5-4.0/22-35  
2.5-4.0/22-35  
Nm/lb.in.  
g
Md  
w
190  
R
Sirectifier  
厂商 型号 描述 页数 下载

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