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PYA28C64B-15CWMB

型号:

PYA28C64B-15CWMB

品牌:

PYRAMID[ PYRAMID SEMICONDUCTOR CORPORATION ]

页数:

11 页

PDF大小:

673 K

PYA28C64B  
8K x 8 EEPROM  
FEATURES  
Access Times of 150, 200, 250 and 350ns  
Single 5V±10% Power Supply  
Simple Byte and Page Write  
Software Data Protection  
CMOS & TTL Compatible Inputs and Outputs  
Endurance:  
- 100,000 Write Cycles  
Low Power CMOS:  
- 40 mA Active Current  
- 100 µA Standby Current  
Data Retention: 10 Years  
Available in the following packages:  
– 28-Pin 600 mil Ceramic DIP  
Fast Write Cycle Times  
– 32-Pin Ceramic LCC (450x550 mils)  
DESCRIPTIOꢀ  
The PYA28C64B is a 5 Volt 8Kx8 EEPROM. The device  
supports 64-byte page write operation. The PYA28C64B  
features DATA and Toggle Bit Polling to indicate early  
completion of a Write Cycle. The device also includes  
user-optional software data protection. Data Retention is  
10 Years. The device is available in a 28-Pin 600 mil wide  
Ceramic DIP and 32-Pin LCC.  
FUꢀCTIOꢀAL BLOCꢁ DIAꢂRAM  
PIꢀ COꢀFIꢂURATIOꢀ  
DIP (C5-1)  
LCC (L6)  
Document # EEPROM111 REV OR  
Created June 2013  
PYA28C64B - 8K x 8 EEPROM  
OPERATIOꢀ  
READ  
infinitely wide, so long as the host continues to access the  
Read operations are initiated by both OE and CE LOW.  
The read operation is terminated by either CE or OE re-  
turning HIGH. This two line control architecture elimi-  
nates bus contention in a system environment. The data  
bus will be in a high impedance state when either OE or  
CE is HIGH.  
device within the byte load cycle time of 150µs.  
DATA POLLIꢀꢂ  
The PYA28C64B features DATA Polling as a method to  
indicate to the host system that the byte write or page  
write cycle has completed. DATA Polling allows a sim-  
ple bit test operation to determine the status of the PY-  
A28C64B, eliminating additional interrupts or external  
hardware. During the internal programming cycle, any at-  
tempt to read the last byte written will produce the comple-  
ment of that data on I/O7 (i.e., write data=0xxx xxxx, read  
data=1xxx xxxx). Once the programming cycle is com-  
plete, I/O7 will reflect true data. Note: If the PYA28C64B  
is in the protected state and an illegal write operation is  
attempted, DATA Polling will not operate.  
BYTE WRITE  
Write operations are initiated when both CE and WE are  
LOW and OE is HIGH. The PYA28C64B supports both a  
CE and WE controlled write cycle. That is, the address is  
latched by the falling edge of either CE or WE, whichever  
occurs last. Similarly, the data is latched internally by the  
rising edge of either CE or WE, whichever occurs first. A  
byte write operation, once initiated, will automatically con-  
tinue to completion.  
TOꢂꢂLE BIT  
PAꢂE WRITE  
The PYA28C64B also provides another method for deter-  
mining when the internal write cycle is complete. During  
the internal programming cycle, I/O6 will toggle from HIGH  
to LOW and LOW to HIGH on subsequent attempts to  
read the device. When the internal cycle is complete the  
toggling will cease and the device will be accessible for  
addtional read or write operations.  
The page write feature of the PYA28C64B allows 1 to  
64 bytes of data to be consecutively written to the PY-  
A28C256 during a single internal programming cycle.  
The host can fetch data from another device within the  
system during a page write operation (change the source  
address), but the page address (A6 through A12) for each  
subsequent valid write cycle to the part during this opera-  
tion must be the same as the initial page address. The  
bytes within the page to be written are specified with the  
A0 through A5 inputs.  
The page write mode can be initiated during any write  
operation. Following the initial byte write cycle, the host  
can write an additional 1 to 63 bytes in the same man-  
ner as the first byte was written. Each successive byte  
load cycle, started by the WE HIGH to LOW transition,  
must begin within 150µs of the falling edge of the pre-  
ceding WE. If a subsequent WE HIGH to LOW transition  
is not detected within 150µs, the internal automatic pro-  
gramming cycle will commence. There is no page write  
window limitation. Effectively, the page write window is  
Document # EEPROM111 REV OR  
Page 2  
PYA28C64B - 8K x 8 EEPROM  
MAꢃIMUM RATIꢀꢂS(1)  
RECOMMEꢀDED OPERATIꢀꢂ COꢀDITIOꢀS  
ꢂrade(2)  
Ambient Temp  
ꢂꢀD  
VCC  
Sym Parameter  
Value  
Unit  
Power Supply Pin with  
VCC  
Military  
-55°C to +125°C  
0V  
5.0V ± 10%  
-0.3 to +6.25  
V
Respect to GND  
Terminal Voltage with  
VTERM Respect to GND (up to  
6.25V)  
-0.5 to +6.25  
V
CAPACITAꢀCES(4)  
TA  
Operating Temperature  
-55 to +125  
-55 to +125  
-65 to +150  
1.0  
°C  
°C  
°C  
W
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)  
TBIAS Temperature Under Bias  
TSTG Storage Temperature  
Sym Parameter  
Conditions Typ Unit  
PT  
Power Dissipation  
CIN  
Input Capacitance  
VIN = 0V  
10  
10  
pF  
pF  
IOUT DC Output Current  
50  
mA  
COUT  
Output Capacitance  
VOUT = 0V  
DC ELECTRICAL CHARACTERISTICS  
(Over Recommended Operating Temperature & Supply Voltage)(2)  
PYA28C64B  
Sym Parameter  
Test Conditions  
Unit  
Min  
2.0  
Max  
VIH Input High Voltage  
VCC + 0.3  
0.8  
V
V
V
V
V
V
VIL Input Low Voltage  
-0.5(3)  
VHC CMOS Input High Voltage  
VLC CMOS Input Low Voltage  
VOL Output Low Voltage (TTL Load)  
VOH Output High Voltage (TTL Load)  
VCC - 0.2 VCC + 0.5  
-0.5(3)  
0.2  
0.4  
IOL = +2.1 mA, VCC = Min  
IOH = -0.4 mA, VCC = Min  
2.4  
-10  
VCC = Max  
ILI  
Input Leakage Current  
+10  
+10  
µA  
µA  
VIN = GND to VCC  
VCC = Max, CE = VIH,  
VOUT = GND to VCC  
CE ≥ VIH, OE = VIL,  
VCC = Max,  
-10  
ILO Output Leakage Current  
ISB Standby Power Supply Current (TTL Input Levels)  
2
mA  
µA  
f = Max, Outputs Open  
CE ≥ VHC,  
VCC = Max,  
ISB1 Standby Power Supply Current (CMOS Input Levels)  
100  
f = 0, Outputs Open,  
VIN ≤ VLC or VIN ≥ VHC  
CE = OE = VIL,  
WE = VIH,  
ICC Supply Current  
40  
mA  
All I/O's = Open,  
Inputs = VCC = 5.5V  
ꢀotes:  
1. Stresses greater than those listed under MAxIMꢀM RAꢁINGꢂ may  
cause permanent damage to the device. This is a stress rating only  
and functional operation of the device at these or any other conditions  
above those indicated in the operational sections of this specification  
is not implied. Exposure to MAꢀIMUM rating conditions for extended  
periods may affect reliability.  
2. Extended temperature operation guaranteed with 400 linear feet per  
minute of air flow.  
3.TransientinputswithVIL andIIL notmorenegativethan-3.0Vand-100mA,  
respectively, are permissible for pulse widths up to 20ns.  
4. This parameter is sampled and not 100% tested.  
Document # EEPROM111 REV OR  
Page 3  
PYA28C64B - 8K x 8 EEPROM  
POWER-UP TIMIꢀꢂ  
Symbol  
Parameter  
Max  
100  
5
Unit  
µs  
tPUR  
Power-up to Read operation  
Power-up to Write operation  
tPUW  
ms  
AC ELECTRICAL CHARACTERISTICS—READ CYCLE  
(VCC = 5V ± 10%, All Temperature Ranges)(2)  
-150  
-200  
-250  
-350  
Unit  
Sym Parameter  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
tAVAV  
Read Cycle Time  
150  
200  
250  
350  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAVQV Address Access Time  
150  
150  
70  
200  
200  
80  
250  
250  
100  
350  
350  
100  
tELQV Chip Enable Access Time  
tOLQV Output Enable Access Time  
tELQꢀ Chip Enable to Output in Low Z  
tEHQZ Chip Disable to to Output in High Z  
tOLQꢀ Output Enable to Output in Low Z  
tOHQZ Output Disable to Output in High Z  
tAVQꢀ Output Hold from Address Change  
0
0
0
0
0
0
0
0
0
0
0
0
50  
50  
55  
55  
60  
60  
70  
70  
TIMIꢀꢂ WAVEFORM OF READ CYCLE  
Document # EEPROM111 REV OR  
Page 4  
PYA28C64B - 8K x 8 EEPROM  
AC CHARACTERISTICS—WRITE CYCLE  
(VCC = 5V ± 10%, All Temperature Ranges)(2)  
150 / 200 / 250 / 350  
Symbol  
Parameter  
Unit  
Min  
Max  
tWHWL1  
tEHEL1  
Write Cycle Time  
Address Setup Time  
Address Hold Time  
Write Setup Time  
Write Hold Time  
OE Setup Time  
10  
ms  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
µs  
µs  
µs  
µs  
tAVEL  
tAVWL  
0
50  
0
tELAꢀ  
tWLAꢀ  
tWLEL  
tELWL  
tWHEH  
0
tOHEL  
tOHWL  
10  
10  
100  
50  
0
tWHOL  
OE Hold Time  
tELEH  
tWLWH  
WE Pulse Width  
Data Setup Time  
Data Hold Time  
Byte Load Cycle Time  
CE Setup Time  
tDVEH  
tDVWH  
tEHDꢀ  
tWHDꢀ  
tEHEL2  
tWHWL2  
0.2  
1
150  
tELWL  
tOVHWL  
tEHWH  
tWHOH  
Output Setup Time  
CE Hold Time  
1
1
OE Hold Time  
1
Document # EEPROM111 REV OR  
Page 5  
PYA28C64B - 8K x 8 EEPROM  
TIMIꢀꢂ WAVEFORM OF PAꢂE WRITE CYCLE  
ꢀOTES:  
• For each successive write within the page write operation, A6-A12 should be the same. Otherwise, writes to an un-  
known address could occur.  
• Between successive byte writes within a page write operation, OE can be strobed LOW. For example, this can be  
done with CE and WE HIGH to fetch data from another memory device within the system for the next write. Alterna-  
tively, this can be done with WE HIGH and CE LOW, effectively performing a polling operation.  
• ꢁhe timings shown above are unique to page write operations. Individual byte load operations within the page write  
must conform to either the CE or WE controlled write cycle timing.  
Document # EEPROM111 REV OR  
Page 6  
PYA28C64B - 8K x 8 EEPROM  
SOFTWARE DATA PROTECTIOꢀ EꢀABLE  
ALꢂORITHM(1)  
SOFTWARE DATA PROTECTIOꢀ DISABLE  
ALꢂORITHM(1)  
(SDP Set)  
(SDP Reset)  
ꢀotes:  
1. Data Format: I/O7 - I/O0 (Hex)  
Address Format: A12 - A0 (Hex)  
2. Write Protect state will be activated at end of write even if no other data is loaded.  
3. Write Protect state will be deactivated at end of write period even if no other data is loaded.  
4. 1 to 64 bytes of data are loaded.  
Document # EEPROM111 REV OR  
Page 7  
PYA28C64B - 8K x 8 EEPROM  
AC TEST COꢀDITIOꢀS  
Input Pulse Levels  
TRUTH TABLE  
Mode  
GND to 3.0V  
10ns  
CE  
L
OE  
L
WE  
H
I/O  
DOUT  
DIN  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
Read  
1.5V  
Write  
L
H
L
L
1.5V  
Write Inhibit  
Write Inhibit  
Standby  
H
See Figure 1  
H
High Z  
High Z  
Output Disable  
H
Figure 1. Output Load  
Document # EEPROM111 REV OR  
Page 8  
PYA28C64B - 8K x 8 EEPROM  
ORDERIꢀꢂ IꢀFORMATIOꢀ  
Document # EEPROM111 REV OR  
Page 9  
PYA28C64B - 8K x 8 EEPROM  
SIDE BRAZED DUAL Iꢀ-LIꢀE PACꢁAꢂE (600 mils)  
Pkg #  
C5-1  
# Pins  
28 (600 mil)  
Symbol  
Min  
-
Max  
A
b
0.232  
0.026  
0.065  
0.018  
1.490  
0.610  
0.014  
0.045  
0.008  
-
b2  
C
D
E
0.500  
eA  
e
0.600 BSC  
0.100 BSC  
L
0.125  
0.200  
Q
0.015  
0.005  
0.005  
0.060  
S1  
S2  
-
-
RECTAꢀꢂULAR LEADLESS CHIP CARRIER  
Pkg #  
# Pins  
Symbol  
A
L6  
32  
Min  
Max  
0.060  
0.050  
0.022  
0.442  
0.075  
0.065  
0.028  
0.458  
A1  
B1  
D
D1  
D2  
D3  
E
0.300 BSC  
0.150 BSC  
-
0.458  
0.560  
0.540  
E1  
E2  
E3  
e
0.400 BSC  
0.200 BSC  
-
0.558  
0.050 BSC  
0.040 REF  
0.020 REF  
h
j
L
0.045  
0.055  
0.055  
0.095  
L1  
0.045  
0.075  
L2  
ND  
NE  
7
9
Document # EEPROM111 REV OR  
Page 10  
PYA28C64B - 8K x 8 EEPROM  
REVISIOꢀS  
DOCUMEꢀT ꢀUMBER EEPROM111  
DOCUMEꢀT TITLE  
PYA28C64B - 8K x 8 EEPROM  
REV ISSUE DATE  
ORIꢂIꢀATOR DESCRIPTIOꢀ OF CHAꢀꢂE  
JDB New Data ꢂheet  
OR  
Jun 2013  
Document # EEPROM111 REV OR  
Page 11  
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