IXFA7N60P3
IXFP7N60P3
Symbol
Test Conditions
Characteristic Values
TO-263 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
4
7
S
RGi
6.0
Ciss
Coss
Crss
705
84
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
4.5
Pins:
td(on)
tr
td(off)
tf
13
12
27
10
ns
ns
ns
ns
Resistive Switching Times
1 - Gate
2,4 - Drain
3 - Source
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Qg(on)
Qgs
13.3
3.7
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
5.1
RthJC
RthCS
0.69 C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V, Note1
7
A
A
TO-220 Outline
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
28
1.4
A
E
oP
A1
V
H1
Q
D2
D
trr
QRM
IRM
250
C
ns
IF = 7A, -di/dt = 25A/μs
0.36
2.60
D1
VR = 100V
E1
A
A2
EJECTOR
L1
L
e
c
3X b
3X b2
e1
Note 1. Pulse test, t 300s, duty cycle, d 2%.
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
