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IXFR90N30

型号:

IXFR90N30

描述:

HiPerFET功率MOSFET ISOPLUS247[ HiPerFET Power MOSFETs ISOPLUS247 ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

57 K

HiPerFETTMPowerMOSFETs  
ISOPLUS247TM  
IXFR 90N30  
VDSS = 300 V  
ID25 = 75 A  
(Electrically Isolated Back Surface)  
RDS(on) = 33 mW  
Single MOSFET Die  
trr £ 250 ns  
ISOPLUS247TM  
E153432  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
300  
300  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
Isolated backside*  
D = Drain  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, Note 1  
TC = 25°C  
75  
360  
90  
A
A
A
G = Gate  
S = Source  
* Patent pending  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
64  
3
mJ  
J
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
Features  
l Silicon chip on Direct-Copper-Bond  
PD  
TC = 25°C  
400  
W
substrate  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
l Low drain to tab capacitance(<30pF)  
l Low RDS (on) HDMOSTM process  
l Rugged polysilicon gate cell structure  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
2500  
5
°C  
V~  
g
VISOL  
Weight  
50/60 Hz, RMS  
t = 1 min  
l Unclamped Inductive Switching (UIS)  
rated  
l Fast intrinsic Rectifier  
Applications  
l
DC-DC converters  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
Battery chargers  
l
Switched-mode and resonant-mode  
power supplies  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250mA  
VDS = VGS, ID = 4mA  
VGS = ±20 V, VDS = 0  
300  
2.0  
V
4.5 V  
l
DC choppers  
l AC & DC motor control  
±100 nA  
Advantages  
l
Easy assembly  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 mA  
2 mA  
l
Space savings  
l
High power density  
RDS(on)  
VGS = 10 V, ID = IT  
Notes 2, 3  
33 mW  
l
Low noise to ground  
© 2000 IXYS All rights reserved  
98764 (11/00)  
IXFR 90N30  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS247OUTLINE  
VDS = 10 V; ID = IT  
Notes 2, 3  
40  
70  
S
Ciss  
Coss  
Crss  
10000  
1800  
700  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
42  
55  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
RG = 2.0 W (External), Notes 2, 3  
100  
40  
Qg(on)  
Qgs  
360  
60  
nC  
nC  
nC  
1 Gate, 2 Drain (Collector)  
3 Source (Emitter)  
4 no connection  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
Qgd  
180  
Dim.  
Millimeter  
Inches  
RthJC  
RthCK  
0.30 K/W  
K/W  
Min.  
Max. Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
0.15  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
TestConditions  
e
L
L1  
5.45 BSC  
19.81 20.32  
3.81  
.215 BSC  
.780 .800  
.150 .170  
4.32  
IS  
VGS = 0 V  
90  
360  
1.5  
A
A
V
Q
R
5.59  
4.32  
6.20  
4.83  
.220 .244  
.170 .190  
ISM  
VSD  
Repetitive; Note 1  
IF = IT, VGS = 0 V, Notes 2, 3  
trr  
250 ns  
QRM  
IRM  
1.4  
10  
mC  
IF = 50A,-di/dt = 100 A/ms, VR = 100 V  
A
Note: 1. Pulse width limited by TJM  
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %  
3. IT = 45A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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