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IXFP16N60P3

型号：

IXFP16N60P3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

327 K

下载PDF手册
Polar3 TM HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 16A  
RDS(on) 470m  
IXFA16N60P3  
IXFP16N60P3  
IXFH16N60P3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXFA)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220 (IXFP)  
TJ = 25C to 150C  
600  
600  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
D (Tab)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
16  
40  
A
A
TO-247 (IXFH)  
IA  
TC = 25C  
TC = 25C  
8
A
EAS  
800  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
35  
V/ns  
W
G
D
D (Tab)  
S
347  
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
International Standard Packages  
Fast Intrinsic Rectifier  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
3.0  
5.0  
Applications  
100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
25 A  
1.5 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
470 m  
DS100419C(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA16N60P3 IXFP16N60P3  
IXFH16N60P3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
10  
17  
S
RGi  
2.3  
Ciss  
Coss  
Crss  
1830  
217  
8.6  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
20  
13  
42  
8
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 5(External)  
Qg(on)  
Qgs  
36  
9
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
13  
RthJC  
RthCS  
0.36 C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V, Note1  
16  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
48  
1.4  
V
trr  
QRM  
IRM  
250  
C  
ns  
IF = 8A, -di/dt = 100A/μs  
0.7  
7.6  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA16N60P3 IXFP16N60P3  
IXFH16N60P3  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
V
= 10V  
7V  
GS  
V
= 10V  
8V  
GS  
7V  
6V  
6V  
6
4
2
5V  
5V  
0
0
0
1
2
3
4
5
6
7
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 8A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
16  
14  
12  
10  
8
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 16A  
D
I
= 8A  
D
6
5V  
4
2
4V  
0
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 8A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
18  
16  
14  
12  
10  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 10V  
GS  
T
J
= 125oC  
T
J
= 25oC  
6
4
2
0
0
5
10  
15  
20  
25  
30  
35  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA16N60P3 IXFP16N60P3  
IXFH16N60P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
30  
25  
20  
15  
10  
5
20  
18  
16  
14  
12  
10  
8
T
= - 40oC  
J
25oC  
125oC  
T
= 125oC  
J
25oC  
- 40oC  
6
4
2
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
10  
9
8
7
6
5
4
3
2
1
0
V
= 300V  
DS  
I
I
= 8A  
D
G
= 10mA  
T
J
= 125oC  
T
J
= 25oC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
4
8
12  
16  
20  
24  
28  
32  
36  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1
10,000  
1,000  
100  
10  
= 1 MHz  
f
C
iss  
0.1  
0.01  
C
C
oss  
rss  
1
0.001  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_16N60P3(W5)11-29-11  
IXFA16N60P3 IXFP16N60P3  
IXFH16N60P3  
TO-263 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-220 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-247 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
© 2018 IXYS CORPORATION, All Rights Reserved  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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