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IXFB40N110Q3

型号：

IXFB40N110Q3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

145 K

下载PDF手册
Preliminary Technical Information  
HiperFETTM  
Power MOSFET  
Q3-Class  
VDSS = 1100V  
ID25 = 40A  
RDS(on) 260m  
IXFB40N110Q3  
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
PLUS264TM  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1100  
1100  
V
V
G
D
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
Tab  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
40  
A
A
G = Gate  
D
= Drain  
S
= Source  
Tab = Drain  
100  
IA  
TC = 25C  
TC = 25C  
40  
4
A
J
EAS  
Features  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
50  
V/ns  
W
Low Intrinsic Gate Resistance  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
1560  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Advantages  
FC  
Mounting Force  
30..120/6.7..27  
10  
N/lb.  
g
High Power Density  
Easy to Mount  
Weight  
Space Savings  
Applications  
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
1100  
3.5  
Typ.  
Max.  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
6.5  
200 nA  
IDSS  
50 A  
TJ = 125C  
3 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
260 m  
DS100580A(02/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXFB40N110Q3  
Symbol  
Test Conditions  
Characteristic Values  
PLUS264TM (IXFB) Outline  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
14  
24  
S
Ciss  
Coss  
Crss  
14  
984  
120  
nF  
pF  
pF  
RGi  
0.18  
47  
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 0.5(External)  
tr  
68  
74  
ns  
ns  
td(off)  
tf  
26  
ns  
Qg(on)  
Qgs  
300  
95  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
143  
RthJC  
RthCS  
0.08C/W  
C/W  
0.13  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
40  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
160  
1.4  
trr  
QRM  
IRM  
434  
4.1  
18.8  
ns  
C  
A
IF = 20A, -di/dt = 100A/s  
VR = 100V, VGS = 0V  
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFB40N110Q3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
40  
36  
32  
28  
24  
20  
16  
12  
8
80  
70  
60  
50  
40  
30  
20  
10  
0
V = 10V  
GS  
V
= 10V  
GS  
9V  
8V  
8V  
7V  
7V  
6V  
5V  
6V  
5V  
4
0
0
1
2
3
4
5
6
7
8
9
10  
11  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 20A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
40  
36  
32  
28  
24  
20  
16  
12  
8
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 40A  
D
I
= 20A  
D
5V  
4V  
4
0
0
5
10  
15  
20  
25  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 20A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
T
J
= 125ºC  
T
J
= 25ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXFB40N110Q3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
25ºC  
T
J
= 125ºC  
25ºC  
125ºC  
- 40ºC  
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
140  
120  
100  
80  
V
= 500V  
DS  
I
I
= 20A  
D
G
= 10mA  
60  
6
T
J
= 125ºC  
40  
4
T
J
= 25ºC  
20  
2
0
0
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
40  
80  
120  
160  
200  
240  
280  
320  
360  
400  
440  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1000  
100  
10  
= 1 MHz  
f
C
iss  
R
Limit  
DS(on)  
1ms  
100µs  
25µs  
C
oss  
1
T
= 150ºC  
= 25ºC  
J
C
rss  
T
C
Single Pulse  
0.1  
10  
10  
100  
1,000  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFB40N110Q3  
Fig. 13. Maximum Transient Thermal Impedance  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXF_40N110Q3(Q9) 02-25-14  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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