IXFP5N100PM
Symbol
Test Conditions
Characteristic Values
OVERMOLDED TO-220 FULL PAK
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 2.5A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
2.4
4.0
S
Ciss
Coss
Crss
1830
113
20
pF
pF
pF
RGi
1.6
Ω
1
2
3
td(on)
tr
td(off)
tf
12
13
30
37
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 2.5A
RG = 5Ω (External)
Qg(on)
Qgs
33.4
10.6
14.4
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 2.5A
Qgd
Terminals: 1 - Gate
2 - Drain
RthJC
3.0 °C/W
3 - Source
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
5
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
20
1.3
200
trr
ns
A
IF = 5A, -di/dt = 100A/μs
IRM
QRM
7.4
VR = 100V, VGS = 0V
0.43
μC
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
