请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

VUB120-16NOXT

型号：

VUB120-16NOXT

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

251 K

下载PDF手册
VUB120-16NOX  
3~  
Rectifier  
Brake  
Chopper  
Standard Rectifier Module  
VRRM  
VCES  
= 1200  
= 1600  
IDAV  
180  
IC25  
180  
1.7  
=
=
=
=
IFSM  
1100  
VCE(sat)  
3~ Rectifier Bridge + Brake Unit  
Part number  
VUB120-16NOX  
Backside: isolated  
M1/O1  
S1  
U1/  
W1  
~A6  
~E6  
~K6  
M10/O10  
W U S/T  
10 10 10  
V2-Pack  
Features / Advantages:  
Applications:  
Package:  
● Package with DCB ceramic base plate  
● Improved temperature and power cycling  
● Planar passivated chips  
● 3~ Rectifier with brake unit  
for drive inverters  
● Isolation Voltage:  
● Industry standard outline  
● RoHS compliant  
V~  
3600  
● Very low forward voltage drop  
● Very low leakage current  
● Soldering pins for PCB mounting  
● Height: 17 mm  
● X2PT - 2nd generation Xtreme light Punch Through  
● Rugged X2PT design results in:  
- short circuit rated for 10 µsec.  
- very low gate charge  
● Base plate: DCB ceramic  
● Reduced weight  
● Advanced power cycling  
- low EMI  
- square RBSOA @ 2x Ic  
● Thin wafer technology combined with X2PT design  
results in a competitive low VCE(sat) and low  
thermal resistance  
Terms Conditions of usage:  
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and  
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The  
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns  
the specific application of your product, please contact your local sales office.  
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.  
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend  
- to perform joint risk and quality assessments;  
- the conclusion of quality agreements;  
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405g  
© 2017 IXYS all rights reserved  
VUB120-16NOX  
Ratings  
Rectifier  
Symbol  
VRSM  
Definition  
Conditions  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
1700  
1600  
100  
2
V
V
max. non-repetitive reverse blocking voltage  
max. repetitive reverse blocking voltage  
VRRM  
IR  
reverse current  
VR =1600 V  
µA  
mA  
V
VR =1600 V  
IF = 60 A  
IF = 180 A  
IF = 60 A  
IF = 180 A  
TC = 90°C  
rectangular  
forward voltage drop  
1.16  
1.55  
1.09  
1.59  
180  
VF  
V
TVJ  
=
°C  
V
125  
V
bridge output current  
TVJ = 150°C  
TVJ = 150°C  
A
IDAV  
d = ⅓  
0.81  
V
VF0  
threshold voltage  
slope resistance  
for power loss calculation only  
4.4 mΩ  
0.6 K/W  
K/W  
rF  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
Ptot  
0.2  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
205  
1.10  
1.19  
935  
W
kA  
kA  
A
total power dissipation  
max. forward surge current  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400 V; f = 1 MHz  
IFSM  
TVJ = 150°C  
VR = 0 V  
1.01  
kA  
value for fusing  
TVJ = 45°C  
VR = 0 V  
I²t  
6.05 kA²s  
5.89 kA²s  
4.37 kA²s  
4.25 kA²s  
pF  
TVJ = 150°C  
VR = 0 V  
TVJ = 25°C  
37  
CJ  
junction capacitance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405g  
© 2017 IXYS all rights reserved  
VUB120-16NOX  
Ratings  
Brake IGBT + Diode  
Symbol  
VCES  
Definition  
Conditions  
min. typ. max. Unit  
collector emitter voltage  
TVJ  
=
25°C  
1200  
20  
V
V
max. DC gate voltage  
VGES  
VGEM  
IC25  
max. transient gate emitter voltage  
collector current  
30  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
180  
140  
500  
2.1  
A
A
IC80  
total power dissipation  
W
V
P
tot  
collector emitter saturation voltage  
IC = 100 A; VGE = 15 V  
1.7  
1.9  
6.8  
VCE(sat)  
V
gate emitter threshold voltage  
collector emitter leakage current  
IC = 4 mA; VGE = VCE  
VCE = VCES; VGE = 0 V  
6
7.5  
V
VGE(th)  
ICES  
0.1 mA  
mA  
0.1  
gate emitter leakage current  
total gate charge  
VGE = 20 V  
500  
nA  
nC  
ns  
IGES  
VCE = 600 V; V = 15 V; IC =100 A  
GE  
340  
230  
70  
QG(on)  
td(on)  
tr  
turn-on delay time  
current rise time  
ns  
inductive load  
TVJ = 125°C  
turn-off delay time  
380  
230  
12.5  
11.5  
ns  
td(off)  
tf  
VCE =600 V; IC = 100 A  
VGE = 15 V; RG = 6.8 Ω  
current fall time  
ns  
turn-on energy per pulse  
turn-off energy per pulse  
reverse bias safe operating area  
mJ  
mJ  
Eon  
Eoff  
VGE = 15 V; RG = 6.8 Ω  
TVJ = 125°C  
TVJ = 125°C  
RBSOA  
ICM  
VCEK = 1200 V  
300  
10  
A
short circuit safe operating area  
short circuit duration  
SCSOA  
tSC  
VCEK = 1200 V  
VCE = 720 V; V = 15 V  
GE  
µs  
A
short circuit current  
RG = 6.8Ω; non-repetitive  
450  
ISC  
thermal resistance junction to case  
thermal resistance case to heatsink  
0.25 K/W  
K/W  
RthJC  
RthCH  
0.10  
Brake Diode  
max. repetitive reverse voltage  
TVJ = 25°C  
TC = 25°C  
1200  
48  
V
A
A
V
V
VRRM  
IF25  
IF80  
VF  
forward current  
forward voltage  
reverse current  
32  
TC = 80°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
IF = 30 A  
2.75  
1.60  
V = VRRM  
R
0.25 mA  
IR  
1
mA  
µC  
A
reverse recovery charge  
VR = 600 V  
-diF /dt = 1000A/µs  
IF = 30A  
5.2  
50  
Qrr  
max. reverse recovery current  
reverse recovery time  
TVJ = 125°C  
IRM  
300  
1.9  
ns  
trr  
reverse recovery energy  
mJ  
Erec  
RthJC  
RthCH  
thermal resistance junction to case  
thermal resistance case to heatsink  
0.9 K/W  
K/W  
0.3  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405g  
© 2017 IXYS all rights reserved  
VUB120-16NOX  
Ratings  
Package V2-Pack  
Symbol  
IRMS  
Definition  
Conditions  
min. typ. max. Unit  
per terminal  
100  
150  
125  
125  
A
°C  
°C  
°C  
g
RMS current  
-40  
-40  
-40  
TVJ  
virtual junction temperature  
Top  
operation temperature  
storage temperature  
Tstg  
76  
Weight  
MD  
2
2.5 Nm  
mounting torque  
terminal to terminal  
terminal to backside  
6.0  
12.0  
mm  
mm  
V
dSpp/App  
dSpb/Apb  
creepage distance on surface | striking distance through air  
t = 1 second  
3600  
3000  
V
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)  
leer (33), lfd.# (33-36)  
yywwAA  
Part Number  
Lot.No: xxxxxx  
UL Date code Prod. Index  
Ordering  
Ordering Number  
Marking on Product  
Delivery Mode  
Quantity Code No.  
520475  
Standard  
VUB120-16NOX  
VUB120-16NOX  
Box  
6
Similar Part  
Package  
Voltage class  
VUB120-16NOXT  
V2-Pack  
1600  
TVJ = 150°C  
Equivalent Circuits for Simulation  
* on die level  
Rectifier  
Brake  
Diode  
V0  
I
R0  
threshold voltage  
slope resistance *  
0.81  
3.2  
1.31  
8
V
V0 max  
R0 max  
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405g  
© 2017 IXYS all rights reserved  
VUB120-16NOX  
Outlines V2-Pack  
Marking  
Remarks:  
EJOT PT® self-tapping screws of the dimension K25 are  
recommended for the mechanical connection between module  
and PCB. Choose the right length according to your board  
thickness at a maximum depth of 6 mm of the module holes.  
The recommended mounting torque is 1.5 Nm.  
M1/O1  
S1  
U1/  
W1  
~A6  
~E6  
~K6  
M10/O10  
W U S/T  
10 10 10  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405g  
© 2017 IXYS all rights reserved  
VUB120-16NOX  
Rectifier  
200  
900  
800  
700  
600  
500  
400  
104  
TVJ = 125°C  
TVJ 25°C  
=
TVJ= 45°C  
TVJ = 45°C  
150  
I2t  
[A2s]  
IF  
IFSM  
[A]  
TVJ= 150°C  
100  
[A]  
50  
TVJ = 150°C  
50Hz, 80% VRRM  
0
103  
0.001  
0.01  
0.1  
1
1
2
3
4
5 6 7 8 10  
0.0  
0.5  
1.0  
1.5  
[V]  
2.0  
V
t [s]  
t [ms]  
Fig. 3 I2t vs. time per diode  
F
Fig. 1 Forward current vs.  
voltage drop per diode  
Fig. 2 Surge overload current  
vs. time per diode  
140  
120  
DC =  
1
RthA:  
80  
60  
40  
20  
0
0.1 K/W  
0.3 K/W  
0.6 K/W  
1.0 K/W  
1.5 K/W  
2.5 K/W  
DC =  
1
0.5  
0.4  
0.5  
0.33  
0.17  
0.08  
100  
80  
60  
40  
20  
0
0.4  
0.33  
0.17  
0.08  
IdAV  
[A]  
Ptot  
[W]  
0
10 20 30 40 50 60 70  
0
20 40 60 80 100 120 140 160  
0
25 50 75 100 125 150  
IF(AV)M [A]  
Tamb [°C]  
TC [°C]  
Fig. 4 Power dissipation vs. forward current  
and ambient temperature per diode  
Fig. 5 Max. forward current vs.  
case temperature per diode  
0.6  
0.5  
0.4  
Constants for ZthJC calculation:  
ZthJC  
[K/W]  
i
Rth (K/W)  
ti (s)  
1
2
3
4
5
0.040  
0.003  
0.140  
0.120  
0.197  
0.004  
0.010  
0.030  
0.300  
0.080  
0.2  
0.1  
0.0  
1
10  
100  
1000  
10000  
t [s]  
Fig. 6 Transient thermal impedance junction to case vs. time per diode  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405g  
© 2017 IXYS all rights reserved  
VUB120-16NOX  
Brake IGBT + Diode  
200  
150  
100  
200  
200  
150  
100  
50  
VGE = 19 V  
17 V  
13 V  
VCE = 20 V  
15 V  
150  
25°C  
11 V  
IC  
IC  
125°C  
TVJ = 150°C  
IC  
[A]  
100  
[A]  
[A]  
125°C  
25°C  
50  
0
50  
9 V  
0
0
6
7
8
9
10 11 12 13  
0.0 0.5 1.0 1.5 2.0 2.5 3.0  
0
1
2
3
4
VCE [V]  
VCE [V]  
VGE [V]  
Fig. 3 Typ. transfer charact.  
IGBT  
Fig.1 Output characteristics IGBT  
Fig.2 Typ. output characteristics  
IGBT  
60  
50  
40  
30  
20  
10  
0
40  
30  
400  
50  
40  
500  
RG = 6.8  
RG = 6.8  
VCE = 600 V  
VCE = 600 V  
VGE  
= 15 V  
VGE  
= 15 V  
TVJ = 125°C  
TVJ = 125°C  
400  
300  
td(off)  
Eoff  
30  
t
td(on)  
300  
Eon  
20  
[mJ]  
tr  
200  
IF  
[A]  
[ns]  
[mJ]  
20  
tf  
[ns]  
200  
100  
0
125°C  
tr  
10  
100  
10  
0
25°C  
Eoff  
Eon  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0
50  
100  
150  
200  
0
50  
100  
150  
200  
IC [A]  
IC [A]  
VF [V]  
Fig. 6 Typ. forward characteristics  
Diode  
Fig. 4 Typ. turn-on energy & switch.  
times vs. collector current  
Fig. 5 Typ. turn-off energy & switch.  
times vs. collector current  
1
8
6
4
2
0
80  
2.5  
125  
RG = 6.8  
TVJ = 125°C  
Diode  
VR = 600 V  
VR = 600 V  
TVJ = 125°C  
IF  
=
30 A  
Erec  
2.0  
Erec  
1.5  
100  
75  
Irr  
60  
IGBT  
Erec  
ZthJC  
0.1  
[K/W]  
Irr  
40  
[A]  
[mJ]  
Irr  
[mJ]  
1.0  
50  
Irr  
[A]  
IGBT  
Diode  
ti  
20  
R
t
i
Ri  
i
0.5  
0.0  
25  
0
0.050 0.0010  
0.035 0.0100  
0.365 0.0050  
0.180 0.0003  
0.120 0.0300 0.255 0.0397  
0.045 0.0800  
Erec  
0.100 0.1000  
0.01  
0.001  
0
0.01  
0.1  
1
0
10 20 30 40 50 60  
4
8
12  
16  
20  
24  
IF [A]  
RG [Ohm]  
t [s]  
Fig. 9 Transient thermal  
resistance junction to case  
Fig. 8 Typ. reverse recovery  
characteristics Diode  
Fig. 7 Typ. reverse recovery  
characteristics Diode  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405g  
© 2017 IXYS all rights reserved  
厂商 型号 描述 页数 下载

STANLEY

 		VUB1104B 单色PLCC - 2型浴缸（高可靠性型， V系列）[ Single Color PLCC-2 Bathtub Type (High Reliability type, V-Series) ] 16 页

STANLEY

 		VUB1105W 单色球透镜类型（高可靠性型， V系列）[ Single Color Dome Lens Type (High Reliability type, V-Series) ] 16 页

IXYS

 		VUB116 三相整流桥IGBT ，快恢复二极管的制动系统[ Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System ] 2 页

IXYS

 		VUB116-16NO1 三相整流桥IGBT ，快恢复二极管的制动系统[ Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System ] 2 页

IXYS

 		VUB120-12IO1 [ Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, ] 1 页

IXYS

 		VUB120-12NO1 三相整流桥IGBT ，快恢复二极管的制动系统[ Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System ] 4 页

IXYS

 		VUB120-12NO2 三相整流桥IGBT ，快恢复二极管的制动系统[ Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System ] 2 页

IXYS

 		VUB120-12NO2L [ Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, ] 2 页

IXYS

 		VUB120-12NO2TL [ 暂无描述 ] 2 页

IXYS

 		VUB120-16IO1 [ Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.195034s