IXFK300N20X3
IXFX300N20X3
TO-264 Outline
Symbol
Test Conditions
Characteristic Values
A
E
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
Q
S
gfs
VDS = 10V, ID = 60A, Note 1
Gate Input Resistance
80
135
S
R
D
Q1
RGi
1.8
R1
1
2
3
L1
Ciss
Coss
Crss
23.8
4.0
nF
nF
pF
VGS = 0V, VDS = 25V, f = 1MHz
L
3.2
c
b
A1
b1
b2
Effective Output Capacitance
e
x2
Co(er)
Co(tr)
1640
5640
pF
pF
Energy related
Time related
VGS = 0V
DS = 0.8 • VDSS
0P
4
V
Terminals:
1
= Gate
2,4 Drain
= Source
=
3
td(on)
tr
td(off)
tf
44
43
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
184
13
RG = 1 (External)
Qg(on)
Qgs
375
117
94
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.10 C/W
C/W
0.15
Source-Drain Diode
PLUS 247TM Outline
A
E1
E
Q
A2
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
D2
R
D
D1
IS
VGS = 0V
300
A
A
4
1
2
3
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
1200
1.4
L1
V
L
trr
QRM
IRM
172
1.1
12.8
ns
IF = 150A, -di/dt = 100A/μs
b
A1
e
μC
3 PLCS
C
2 PLCS
b2 2 PLCS
VR = 100V
b4
A
Terminals: 1 - Gate
2,4 - Drain
3 - Source
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537