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IXKK94N60C3

型号：

IXKK94N60C3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

551 K

下载PDF手册
ADVANCE TECHNICAL INFORMATION  
IXKK 94N60C3  
Power MOSFET  
SuperjDuSn(ocnt)ion MOSFET  
VDSS  
ID25  
= 600 V  
= 94 A  
Low R  
, High Voltage,  
RDS(on) = 35 mΩ  
Symbol  
Test Conditions  
Maximum Ratings  
TO-264  
VDSS  
VGS  
TJ = 25°C to 150°C  
600  
20  
V
V
Continuous  
ID25  
TC = 25°C; Note 1  
TC = 100°C, Note 1  
94  
60  
A
A
G
D
(TAB)  
ID100  
S
ID(RMS)  
EAS  
Package lead current limit  
45  
A
Io = 10A, TC = 25°C  
1800  
mJ  
G = Gate  
S = Source  
D = Drain  
PD  
TC = 25°C  
780  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +125  
z 3RD generation Superjunction power  
MOSFET  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting force  
300  
°C  
FC  
11 ... 65 / 2.4 ...11 N/lb  
- High blocking capability  
- Low on resistance  
Weight  
3
g
- Avalanche rated for unclamped inductive  
switching (UIS)  
z Low thermal resistance due to reduced  
chip thickness  
Applications  
z Switched Mode Power Supplies (SMPS)  
z Uninterruptible Power Supplies (UPS)  
z Power Factor Correction (PFC)  
z Welding  
z Inductive Heating  
Symbol  
RDS(on)  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VGS = 10 V, I = ID100, Note  
30  
75  
35 mΩ  
mΩ  
VGS = 10 V, IDD = ID100, Note TJ = 125°C  
VGS(th)  
IDSS  
VDS = VGS, ID = 4 mA  
2
3
4
V
VDS = V  
T = 25°C  
50 µA  
400 µA  
VGS = 0DVSS  
TJJ = 150°C  
IGSS  
VGS = 20 VDC, VDS = 0  
200  
nA  
DS99065B(08/03)  
© 2003 IXYS All rights reserved  
IXKK 94N60C3  
Symbol  
gFS  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-264 Outline  
VDS = 10 V, ID = ID100  
75  
S
Qg(on)  
Qgs  
500 625  
48  
nC  
nC  
nC  
VGS = 10 V, VDS = 350 V, ID = 40 A  
Qgd  
240  
td(on)  
tr  
td(off)  
tf  
20  
27  
14  
10  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 380V  
ID = 60 A, RG = 2.2 Ω  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
A1  
A2  
RthJC  
RthCH  
0.16 K/W  
K/W  
b
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
0.15  
b1  
b2  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
25.91 26.16  
E
19.81 19.96  
Reverse Correction  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
e
5.46 BSC  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
Symbol  
VSD  
Test Conditions  
L
20.32 20.83  
.800  
.820  
L1  
2.29  
3.17  
2.59  
3.66  
.090  
.102  
P
.125  
.144  
IF = I , VGS = 0 V  
NoteD1100  
1.0  
1.2  
V
Q
6.07  
6.27  
.239  
.247  
Q1  
8.38  
8.69  
.330  
.342  
R
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Note: 1. Pulse test, t100 ≤ 300 µs, duty cycle d ≤ 2 %  
R1  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by one or more  
of the following U.S. patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
6,306,728B1  
6,259,123B1  
6,306,728B1  
6,534,343  
6,404,065B1 6,162,665  
IXKK 94N60C3  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
360  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
VGS = 10V  
7V  
t
t
p = 300µs  
p = 300µs  
320  
280  
240  
200  
160  
120  
80  
6V  
5V  
6V  
5V  
4.5V  
4V  
40  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
2
4
6
8
10  
12 14  
16  
18  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID100 Value  
vs. Junction Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
VGS = 10V  
VGS = 10V  
p = 300µs  
t
p = 300µs  
5V  
t
4.5V  
4V  
ID = 60A  
ID = 30A  
0.7  
0.4  
1
2
3
4
5
6
7
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
D100 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
I
4
3.7  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
t
p = 300µs  
TJ = 125ºC  
TJ = 25ºC  
0.7  
40  
80 120 160 200 240 280 320 360  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2003 IXYS All rights reserved  
IXKK 94N60C3  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
240  
210  
180  
150  
120  
90  
180  
160  
140  
120  
100  
80  
TJ = -40ºC  
25ºC  
125ºC  
60  
TJ = 125ºC  
25ºC  
60  
40  
-40ºC  
30  
20  
0
0
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
0
30  
60  
90  
120 150 180 210 240  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
200  
180  
160  
140  
120  
100  
80  
VDS = 350V  
ID = 80A  
G = 10mA  
I
TJ = 125ºC  
60  
TJ = 25ºC  
40  
20  
0
0
60 120 180 240 300 360 420 480 540  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
Q G - nanoCoulombs  
VS D - Volts  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
0.18  
0.16  
0.14  
0.12  
0.1  
100000  
10000  
1000  
100  
f = 1MHz  
C
iss  
C
oss  
0.08  
0.06  
0.04  
0.02  
0
C
rss  
10  
1
10  
100  
1000  
0
10 20 30 40 50 60 70 80 90 100  
Pulse Width - milliseconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by one or more  
of the following U.S. patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
6,306,728B1  
6,259,123B1  
6,306,728B1  
6,534,343  
6,404,065B1 6,162,665  
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