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IXFA7N100P-TRL

型号：

IXFA7N100P-TRL

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

337 K

下载PDF手册
Polar TM HiPerFETTM  
Power MOSFET  
VDSS = 1000V  
ID25 = 7A  
RDS(on) 1.9  
IXFA7N100P  
IXFP7N100P  
IXFH7N100P  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXFA)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
TO-220 (IXFP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
1000  
1000  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
D (Tab)  
ID25  
IDM  
TC = 25C  
7
A
A
TO-247 (IXFH)  
TC = 25C, Pulse Width Limited by TJM  
18  
IA  
TC = 25C  
TC = 25C  
7
A
EAS  
300  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
10  
V/ns  
W
G
D
D (Tab)  
S
300  
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
International Standard Packages  
Fast Intrinsic Rectifier  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 1mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
1000  
V
V
3.0  
6.0  
Applications  
100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
15 A  
1 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
1.9  
DS99924D(11/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA7N100P IXFP7N100P  
IXFH7N100P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
3.6  
6.0  
S
RGi  
Gate Input Resistance  
1.8  
Ciss  
Coss  
Crss  
2590  
158  
26  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
25  
49  
42  
44  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 10(External)  
Qg(on)  
Qgs  
47  
21  
21  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.42 C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V, Note1  
7
A
A
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
28  
1.3  
V
trr  
QRM  
IRM  
300  
C  
ns  
IF = 3.5A, -di/dt = 100A/μs  
0.4  
4.0  
VR = 100V  
A
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA7N100P IXFP7N100P  
IXFH7N100P  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
7
6
5
4
3
2
1
0
14  
12  
10  
8
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
8V  
7V  
6
4
6V  
5V  
6V  
2
0
0
2
4
6
8
10  
12  
14  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
7
6
5
4
3
2
1
0
3.0  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
7V  
I
= 7A  
D
I
= 3.5A  
D
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
3
6
9
12  
15  
18  
21  
24  
27  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 3.5A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
8
7
6
5
4
3
2
1
0
V
= 10V  
GS  
T = 125oC  
J
T = 25oC  
J
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA7N100P IXFP7N100P  
IXFH7N100P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
14  
12  
10  
8
14  
12  
10  
8
T = - 40oC  
J
25oC  
T
J
= 125oC  
25oC  
- 40oC  
125oC  
6
6
4
4
2
2
0
0
4.0  
0.4  
0
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
1.2  
40  
0
2
4
6
8
10  
12  
14  
16  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
30  
25  
20  
15  
10  
5
16  
V
I
= 500V  
DS  
14  
12  
10  
8
= 3.5A  
D
I
= 10mA  
G
6
T = 125oC  
J
4
T = 25oC  
J
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
VSD - Volts  
QG - NanoCoulombs  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100  
10,000  
1,000  
100  
C
iss  
R
Limit  
)
DS(  
on  
10  
1
25μs  
100μs  
1ms  
C
C
oss  
rss  
0.1  
0.01  
o
T = 150 C  
J
10ms  
100ms  
o
T
= 25 C  
C
DC  
f
= 1 MHz  
5
Single Pulse  
10  
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA7N100P IXFP7N100P  
IXFH7N100P  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_7N100P(56) 5-28-14-A  
IXFA7N100P IXFP7N100P  
IXFH7N100P  
TO-263 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-220 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-247 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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