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RX075FD26R

型号：

RX075FD26R

品牌：

IXYS[ IXYS CORPORATION ]

页数：

9 页

PDF大小：

443 K

下载PDF手册
Date:- 25 Jun, 2003  
Data Sheet Issue:- 1  
Prospective Data  
Distributed Gate Thyristor  
Type RX075FD24# to RX075FD28#  
(Development Type No.)  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
2400-2800  
V
V
V
V
2400-2800  
2400-2800  
2500-2900  
MAXIMUM  
LIMITS  
3814  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
Maximum mean on-state current, Tsink=55°C, (note 2)  
Maximum mean on-state current. Tsink=85°C, (note 2)  
Maximum mean on-state current. Tsink=85°C, (note 3)  
A
A
A
2553  
1493  
IT(RMS)M Nominal RMS on-state current, Tsink=25°C, (note 2)  
7632  
A
IT(d.c.)  
ITSM  
ITSM2  
I2t  
D.C. on-state current, Tsink=25°C, (note 4)  
6370  
A
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
64.5  
kA  
kA  
A2s  
A2s  
A/µs  
A/µs  
V
≤
71.0  
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
20.8×106  
25.2×106  
1000  
I2t  
≤
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
diT/dt  
1500  
VRGM  
PG(AV)  
PGM  
THS  
5
5
50  
W
W
Operating temperature range  
Storage temperature range  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
≤
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.  
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1  
Page 1 of 9  
June, 2003  
WESTCODE An IXYS Company  
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#  
Characteristics  
PARAMETER  
MIN.  
TYP. MAX. TEST CONDITIONS  
UNITS  
(Note 1)  
VTM  
VTM  
V0  
Maximum peak on-state voltage  
Maximum peak on-state voltage  
Threshold voltage  
-
-
2.10 ITM=4000A  
3.16 ITM=12000A  
1.568  
V
V
V
-
-
-
-
rS  
Slope resistance  
-
-
0.133  
Ω
m
dv/dt  
IDRM  
IRRM  
VGT  
IGT  
VGD  
IH  
Critical rate of rise of off-state voltage  
Peak off-state current  
Peak reverse current  
200  
-
-
VD=80% VDRM, Linear ramp, Gate o/c  
µ
V/ s  
-
-
-
-
-
-
-
-
-
-
-
-
-
300 Rated VDRM  
300 Rated VRRM  
mA  
mA  
V
-
-
Gate trigger voltage  
3.0  
Tj=25°C  
600  
VD=10V, IT=3A  
Gate trigger current  
-
mA  
V
Non-trigger gate voltage  
Holding current  
-
0.25 Rated VDRM  
1000 Tj=25°C  
-
mA  
tgd  
Gate controlled turn-on delay time  
Turn-on time  
1.0  
1.5  
3000  
1800  
320  
12  
2.0  
VD=67% VDRM, ITM=1000A, di/dt=60A/µs,  
µs  
I
FG=2A, tr=0.5µs, Tj=25°C  
tgt  
3.0  
Qrr  
Qra  
Irm  
Recovered charge  
-
µC  
µC  
A
Recovered charge, 50% Chord  
Reverse recovery current  
Reverse recovery time  
2000  
I
TM=4000A, tp=2000µs, di/dt=60A/µs,  
Vr=100V  
-
-
trr  
µs  
ITM=4000A, tp=2000µs, di/dt=60A/µs,  
Vr=100V, Vdr=67%VDRM, dVdr/dt=20V/µs  
ITM=4000A, tp=2000µs, di/dt=60A/µs,  
Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/µs  
100  
140  
-
-
160  
200  
tq  
Turn-off time (note 2)  
µs  
-
-
-
-
0.0065 Double side cooled  
K/W  
K/W  
kN  
Rth(j-hs) Thermal resistance, junction to heatsink  
0.0130 Single side cooled  
F
Mounting force  
Weight  
81  
-
-
99  
-
Wt  
2.8  
kg  
Notes:-  
1) Unless otherwise indicated Tj=125°C.  
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information  
for details of tq codes.  
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1  
Page 2 of 9  
June, 2003  
WESTCODE An IXYS Company  
Notes on Ratings and Characteristics  
1.0 Voltage Grade Table  
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#  
V
DRM VDSM VRRM  
VRSM  
V
VD VR  
DC V  
1450  
1550  
1650  
Voltage Grade  
V
24  
26  
28  
2400  
2600  
2800  
2500  
2700  
2900  
2.0 Extension of Voltage Grades  
This report is applicable to other and higher voltage grades when supply has been agreed by  
Sales/Production.  
3.0 Extension of Turn-off Time  
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by  
Sales/Production.  
4.0 Repetitive dv/dt  
Higher dv/dt selections are available up to 1000V/µs on request.  
5.0 De-rating Factor  
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.  
6.0 Snubber Components  
When selecting snubber components, care must be taken not to use excessively large values of snubber  
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to  
device damage due to the large resultant values of snubber discharge current. If required, please consult  
the factory for assistance.  
7.0 Rate of rise of on-state current  
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during  
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not  
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the  
total device current including that from any local snubber network.  
8.0 Gate Drive  
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V  
is assumed. This gate drive must be applied when using the full di/dt capability of the device.  
IGM  
4A/µs  
IG  
tp1  
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration  
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.  
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The  
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a  
magnitude in the order of 1.5 times IGT.  
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1  
Page 3 of 9  
June, 2003  
WESTCODE An IXYS Company  
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#  
9.0 Reverse recovery ratings  
(i) Qra is based on 50% Irm chord as shown thus:  
µ
(ii) Qrr is based on a 150 s integration time i.e.  
150µs  
Qrr = irr .dt  
∫
0
(iii)  
t1  
K Factor =  
t2  
10.0 Reverse Recovery Loss  
10.1 Determination by Measurement  
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and  
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be  
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can  
then be evaluated from the following:  
(
+ ⋅  
)
TSINK (new) TSINK (original) E k f Rth  
=
− ⋅  
(
J −Hs  
)
Where k=0.227 (°C/W)/s  
E = Area under reverse loss waveform per pulse in joules (W.s.)  
f = rated frequency Hz at the original heat sink temperature.  
Rth(J-Hs) = d.c. thermal resistance (°C/W).  
The total dissipation is now given by:  
W(TOT) = W(original) + E ⋅ f  
10.2 Determination without Measurement  
In circumstances where it is not possible to measure voltage and current conditions, or for design  
purposes, the additional losses E in joules may be estimated as follows.  
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).  
Let f be the operating frequency in Hz  
TSINK  
= TSINK  
−
( )  
original  
(
E ⋅ Rth ⋅ f  
)
(
new  
)
Where TSINK (new) is the required maximum heat sink temperature and  
TSINK (original) is the heat sink temperature given with the frequency ratings.  
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage  
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than  
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value  
obtained from the curves.  
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1  
Page 4 of 9  
June, 2003  
WESTCODE An IXYS Company  
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#  
11.0 Computer Modelling Parameters  
11.1 Calculating VT using ABCD Coefficients  
The on-state characteristic IT vs VT, on page 7 can be represented in two ways;  
(i)  
the well established VT0 and rT tangent used for rating purposes and  
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in  
terms of IT given below:  
(ii)  
VT A B IT C IT D IT  
= + ⋅ln( )+ ⋅ + ⋅  
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics.  
The resulting values for VT agree with the true device characteristic over a current range, which is limited  
to that plotted.  
25°C Coefficients  
125°C Coefficients  
A
B
C
D
1.5256156  
0.07839183  
A
B
C
D
1.6358306  
-0.03874637  
1.040185×10-4  
5.841671×10-3  
8.061984×10-5  
-3.056955×10-3  
11.2 D.C. Thermal Impedance Calculation  
p=n  
−t  
τ p  
r = r ⋅ 1− e  
∑
t
p
p=1  
p = 1 n, n  
to  
Where  
is the number of terms in the series.  
t = Duration of heating pulse in seconds.  
rt = Thermal resistance at time t.  
r
p
= Amplitude of pth term.  
τ
p  
= Time Constant of rth term.  
D.C. Single Side Cooled  
Term  
rp  
τp  
1
2
3
5.228149×10-3  
0.9862513  
3.076205×10-3  
0.2593041  
1.977511×10-3  
0.03447094  
D.C. Double Side Cooled  
2
Term  
rp  
τp  
1
3
4
0.01186497  
7.361938  
3.872272×10-3  
3.457033×10-3  
0.2019036  
1.694157×10-3  
1.651253  
0.02934724  
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1  
Page 5 of 9  
June, 2003  
WESTCODE An IXYS Company  
Curves  
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#  
Figure 1 - On-state characteristics of Limit device  
Figure 2 - Transient thermal impedance  
10000  
0.1  
RX075FD24#-28#  
Issue 1  
RX075FD24#-28#  
Issue 1  
SSC  
0.0130K/W  
0.01  
DSC  
0.0065K/W  
Tj = 125°C  
Tj = 25°C  
1000  
0.001  
0.0001  
100  
0.00001  
0
1
2
3
4
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Instantaneous on-state voltage - VT (V)  
Time (s)  
Figure 3 - Gate characteristics - Trigger limits  
Figure 4 - Gate characteristics - Power curves  
16  
8
RX075FD24#-28#  
RX075FD24#-28#  
Issue 1  
Issue 1  
Tj=25°C  
7
Tj=25°C  
14  
Max VG dc  
12  
6
Max VG dc  
10  
5
IGT, VGT  
PG Max 50W dc  
8
4
3
6
4
2
PG 5W dc  
Min VG dc  
Min VG dc  
2
1
IGD, VGD  
0
0
0
2
4
6
8
10  
0
0.25  
0.5  
0.75  
1
1.25  
1.5  
Gate Trigger Current - IGT (A)  
Gate Trigger Current - IGT (A)  
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1  
Page 6 of 9  
June, 2003  
WESTCODE An IXYS Company  
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#  
Figure 5 - Total recovered charge, Qrr  
Figure 6 - Recovered charge, Qra (50% chord)  
10000  
10000  
RX075FD24#-28#  
RX075FD24#-28#  
Issue 1  
Issue 1  
Tj = 125°C  
Tj = 125°C  
4kA  
4kA  
3kA  
3kA  
2kA  
1kA  
2kA  
1kA  
1000  
1000  
100  
10  
100  
1000  
10  
100  
1000  
Commutation rate - di/dt (A/µs)  
Commutation rate - di/dt (A/µs)  
Figure 7 - Peak reverse recovery current, Irm  
Figure 8 - Maximum recovery time, trr (50% chord)  
100  
10000  
RX075FD24#-28#  
RX075FD24#-28#  
Issue 1  
Issue 1  
Tj = 125°C  
Tj = 125°C  
4kA  
3kA  
2kA  
1kA  
10  
4kA  
3kA  
2kA  
1kA  
1000  
1
100  
10  
100  
1000  
10  
100  
1000  
Commutation rate - di/dt (A/µs)  
Commutation rate - di/dt (A/µs)  
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1  
Page 7 of 9  
June, 2003  
WESTCODE An IXYS Company  
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#  
Figure 9 - Reverse recovery energy per pulse  
10000  
RX075FD24#-28#  
Issue 1  
Vrm =0.67%VDRM  
Tj = 125°C  
Snubber  
4kA  
3kA  
2kA  
1kA  
Ω
0.5µF, 6  
1000  
100  
10  
100  
1000  
Commutation rate - di/dt (A/µs)  
Figure 10 - Maximum surge and I2t Ratings  
Gate may temporarily lose control of conduction angle  
1000000  
100000  
10000  
1.00E+09  
RX075FD24#-28#  
Issue 1  
Tj (initial) = 125°C  
I2t: VRRM≤10V  
I2t: 60% VRRM  
1.00E+08  
1.00E+07  
≤
ITSM: VRRM 10V  
ITSM: 60% VRRM  
1
3
5
10  
1
5
10  
50 100  
Duration of surge (ms)  
Duration of surge (cycles @ 50Hz)  
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1  
Page 8 of 9  
June, 2003  
WESTCODE An IXYS Company  
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#  
Outline Drawing & Ordering Information  
101A347  
ORDERING INFORMATION  
(Please quote 10 digit code as below)  
RX075  
FD  
♦ ♦  
#
Fixed  
Fixed  
Fixed Voltage Code  
tq Code  
R = 140µs, S = 160µs,  
T = 200µs  
Type Code  
Outline Code  
VDRM/100  
28  
Typical order code: RX075FD28S – 2800V VDRM, VRRM, 160µs tq, 26mm clamp height capsule.  
IXYS Semiconductor GmbH  
Westcode Semiconductors Ltd  
Edisonstraße 15  
Langley Park Way, Langley Park,  
D-68623 Lampertheim  
Tel: +49 6206 503-0  
Chippenham, Wiltshire, SN15 1GE.  
Tel: +44 (0)1249 444524  
Fax: +49 6206 503-627  
E-mail: marcom@ixys.de  
Fax: +44 (0)1249 659448  
E-mail: WSL.sales@westcode,com  
IXYS Corporation  
Westcode Semiconductors Inc  
3270 Cherry Avenue  
3540 Bassett Street  
www.westcode.com  
www.ixys.com  
Santa Clara CA 95054 USA  
Tel: +1 (408) 982 0700  
Fax: +1 (408) 496 0670  
E-mail: sales@ixys.net  
Long Beach CA 90807 USA  
Tel: +1 (562) 595 6971  
Fax: +1 (562) 595 8182  
E-mail: WSI.sales@westcode.com  
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed  
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.  
© Westcode Semiconductors Ltd.  
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.  
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily  
subject to the conditions and limits contained in this report.  
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1  
Page 9 of 9  
June, 2003  
厂商 型号 描述 页数 下载

JAE

 		RX03-15P-F1 [ PCMCIA Connector, 15 Contact(s), 1 Row(s), Female, Right Angle, 0.039 inch Pitch, Surface Mount Terminal, Black Insulator, Receptacle ] 1 页

JAE

 		RX03-15P-FA1 [ PCMCIA Connector, 15 Contact(s), 1 Row(s), Female, Right Angle, 0.039 inch Pitch, Surface Mount Terminal, Black Insulator, Receptacle ] 1 页

JAE

 		RX03-15S-UE [ Telecom and Datacom Connector, 15 Contact(s), Female, Solder Terminal ] 3 页

JAE

 		RX03-25S-UE [ Telecom and Datacom Connector, 25 Contact(s), Female, Solder Terminal ] 3 页

JAE

 		RX03-9P-FA1 [ PCMCIA Connector, 9 Contact(s), 1 Row(s), Female, Right Angle, 0.039 inch Pitch, Surface Mount Terminal, Black Insulator, Receptacle ] 1 页

JAE

 		RX03-9S-M1 [ PCMCIA Connector, 9 Contact(s), 1 Row(s), Female, IDC Terminal ] 1 页

JAE

 		RX03-L15P-F1 [ Telecom and Datacom Connector, 15 Contact(s), Male, Surface Mount Terminal ] 3 页

JAE

 		RX03-L15P-FG1 [ Telecom and Datacom Connector, 15 Contact(s), Male, Surface Mount Terminal ] 3 页

JAE

 		RX03-L25S-U1 [ Telecom and Datacom Connector, 25 Contact(s), Female, Solder Terminal ] 3 页

JAE

 		RX03-L9P-F1 [ Telecom and Datacom Connector, 9 Contact(s), Male, Surface Mount Terminal ] 3 页

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