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IXFA130N15X3

型号：

IXFA130N15X3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

219 K

下载PDF手册
Preliminary Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 150V  
ID25 = 130A  
RDS(on) 9m  
IXFA130N15X3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25C to 150C  
150  
150  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
G = Gate  
S = Source  
D
= Drain  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
Tab = Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
130  
230  
A
A
IA  
TC = 25C  
TC = 25C  
65  
A
J
EAS  
1.2  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
Features  
390  
International Standard Package  
Low RDS(ON) and QG  
Avalanche Rated  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Low Package Inductance  
TL  
dT/dt  
Maximum Lead Temperature for Soldering  
Heating / Cooling rate, 175C - 210C  
300  
50  
°C  
°C/min  
Advantages  
TSOLD  
1.6 mm (0.062in.) from Case for 10s  
260  
10..65 / 2.2..14.6  
2.5  
°C  
N/lb  
g
FC  
Mounting Force  
High Power Density  
Easy to Mount  
Weight  
Space Savings  
Applications  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1.5mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
150  
V
2.5  
4.5  
V
100 nA  
A  
IDSS  
5
TJ = 125C  
300 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
9 m  
DS100902A(4/17)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA130N15X3  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (IXFA) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
50  
82  
S
RGi  
1.8  
Ciss  
Coss  
Crss  
5230  
920  
14  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
1 = Gate  
2 = Drain  
3 = Source  
4 = Drain  
Effective Output Capacitance  
Co(er)  
Co(tr)  
585  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
DS = 0.8 • VDSS  
1350  
V
td(on)  
tr  
td(off)  
tf  
21  
25  
62  
12  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 5(External)  
Qg(on)  
Qgs  
80  
27  
25  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
0.32 C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
130  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
520  
1.4  
V
trr  
QRM  
IRM  
80  
230  
5.7  
ns  
IF = 65A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA130N15X3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
V
= 10V  
9V  
GS  
GS  
120  
100  
80  
60  
40  
20  
0
8V  
7V  
9V  
8V  
7V  
6V  
5V  
6V  
5V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 65A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
120  
100  
80  
60  
40  
20  
0
V
= 10V  
GS  
9V  
8V  
7V  
6V  
I
= 130A  
D
I
= 65A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 65A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
T
= 125oC  
J
V
GS(th)  
T
J
= 25oC  
50  
100  
150  
200  
250  
300  
350  
400  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA130N15X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
V
= 10V  
DS  
60  
T
J
= 125oC  
25oC  
60  
40  
- 40oC  
40  
20  
20  
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
0.3  
1
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
160  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
T
= - 40oC  
J
DS  
140  
120  
100  
80  
25oC  
125oC  
60  
T
J
= 125oC  
40  
T
= 25oC  
J
20  
0
0
0.5  
0.7  
0.9  
1.1  
1.3  
1.5  
1.7  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
ID - Amperes  
VSD - Volts  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
8
100,000  
10,000  
1,000  
100  
V
= 75V  
= 1 MHz  
f
DS  
I
I
= 65A  
D
G
= 10mA  
C
iss  
6
4
C
C
oss  
rss  
2
0
10  
0
10  
20  
30  
40  
50  
60  
70  
80  
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA130N15X3  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
6
5
4
3
2
1
0
1000  
100  
10  
R
Limit  
)
DS(  
on  
100μs  
1ms  
T = 150oC  
1
J
T
= 25oC  
C
10ms  
Single Pulse  
DC  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
1
10  
100  
1000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_130N15X3 (25-S151) 6-29-17  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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