SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FZT688B
FEATURES
*
*
Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A
C
Gain of 400 at IC=3 Amps and very low saturation voltage
APPLICATIONS
Flash gun convertors & Battery powered circuits
*
E
C
PARTMARKING DETAIL
COMPLEMENTARY TYPE -
FZT688B
FZT788B
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
12
Collector-Emitter Voltage
Emitter-Base Voltage
12
V
5
V
Peak Pulse Current
10
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
4
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
V(BR)CBO 12
V(BR)CEO 12
V
IC=100µA
IC=10mA*
IE=100µA
V
V(BR)EBO
ICBO
5
V
Collector Cut-Off Current
Emitter Cut-Off Current
0.1
0.1
V
CB=10V
EB=4V
µA
µA
IEBO
V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.04
0.06
0.18
0.35
0.40
V
V
V
V
V
IC=0.1A, IB=1mA
IC=0.1A,IB=0.5mA*
IC=1A, IB=50mA*
IC=3A, IB=20mA*
IC=4A, IB=50mA*
Base-Emitter SaturationVoltage
Base-Emitter Turn-On Voltage
VBE(sat)
VBE(on)
hFE
1.1
1.0
V
V
IC=3A, IB=20mA*
IC=3A, VCE=2V
Static Forward Current Transfer
Ratio
500
400
100
IC=0.1A, VCE=2V*
IC=3A, VCE=2V*
IC=10A, VCE=2V*
Transition Frequency
fT
150
MHz IC=50mA,VCE=5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
200
40
pF
pF
VEB=0.5Vf=1MHz
VCB=10V,f=1MHz
Cobo
ton
toff
40
500
ns
ns
I =500mA, IB1=50A
C
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 217
