IXFA14N60P3 IXFP14N60P3
IXFH14N60P3
Symbol
Test Conditions
Characteristic Values
TO-220 (IXFP) Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
9
15
S
RGi
2.8
Ciss
Coss
Crss
1480
178
7
pF
VGS = 0V, VDS = 25V, f = 1MHz
pF
pF
td(on)
tr
td(off)
tf
21
15
43
16
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Pins: 1 - Gate
2 - Drain
3 - Source
Qg(on)
Qgs
25
6.3
11
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.38 C/W
TO-220
TO-247
0.50
0.21
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V, Note1
14
A
A
TO-247 (IXFH) Outline
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
56
1.4
V
trr
250
ns
IF = 14A, -di/dt = 50A/μs
QRM
IRM
0.6
5.7
C
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
1 - Gate
2,4 - Drain
3 - Source
TO-263 Outline
1 = Gate
2 = Drain
3 = Source
4 = Drain
Bottom Side
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
