SOT223 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FZT792A
FEATURES
*
High gain and Very low saturation voltage
C
APPLICATIONS
Battery powered circuits
*
E
C
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT692B
FZT792A
B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-75
Collector-Emitter Voltage
-70
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-5
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
-2
2
A
Ptot
W
°C
Tj:Tstg
= 25°C)
-55 to +150
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-75
-70
-5
-100
-90
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
-8.5
Cut-Off Currents
-0.1
-10
V
CB=-40V
VCB=-40V,
amb=100°C
µA
µA
T
IEBO
-0.1
VEB=-4V
µA
Saturation Voltages
VCE(sat)
-0.30 -0.45
-0.30 -0.50
-0.30 -0.50
V
V
V
IC=-500mA, IB=-5mA*
IC=-1A, IB=-25mA*
IC=-2A, IB=-200mA*
VBE(sat)
-0.80 -0.95
V
IC=-1A, IB=-25mA*
3 - 250
