IXSR 50N60BD1
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
ISOPLUS247OUTLINE
J
min. typ. max.
I = IT; V = 10 V,
16
23
S
C
CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IC(on)
Ciss
Coss
Crss
Qg
V
= 15 V, V = 10
160
A
GE
CE
3850
pF
V
= 0 V, V = 25 V, f = 1 MHz
440
pF
GS
DS
50
167
45
pF
nC
Qge
Qgc
td(on)
tri
I = IT, V = 15 V, V = 0.5 V
nC
C
GE
CE
CES
88
nC
Inductive load, TJ = 25°C
I = IT, V = 15 V
70
ns
70
ns
300 ns
300 ns
6.0 mJ
ns
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
C
GE
V
= 0.8 V , R = 2.7 Ω
CE
CES
G
td(off)
tfi
150
150
3.3
70
Remarks: Switching times may increase
for V (Clamp) > 0.8 V , higher T or
increased R
CE
CES
J
Dim.
Millimeter
Inches
Eoff
td(on)
tri
Min.
Max. Min. Max.
G
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Inductive load, TJ = 125°C
I = IT, V = 15 V
70
ns
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
GE
Eon
td(off)
tfi
2.5
230
230
mJ
V
= 0.8 V , R = 2.7 Ω
CE
CES
G
ns
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
Remarks: Switching times may increase
for V (Clamp) > 0.8 V , higher T or
increased R
ns
CE
CES
J
Eoff
4.8
mJ
0.50 K/W
K/W
G
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
RthJC
RthCK
3.81
4.32
0.15
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
SeeIXSK50N60BD1datasheetfor
characteristic curves.
ReverseDiode(FRED)
Characteristic Values
(T = 25°C, unless otherwise specified)
J
Symbol
VF
TestConditions
= IT, V = 0 V,
min. typ. max.
I
2.5
2.5
V
F
GE
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IRM
trr
I
V = 100 V
= IT, V = 0 V, -di /dt = 100 A/µs
2
A
F
GE
F
R
I
= 1 A; -di/dt = 200 A/µs; V = 30 V
35
ns
F
R
RthJC
0.85 K/W
Note: 1. I = 50A
T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
