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TZA3050VH

型号：

TZA3050VH

品牌：

PHILIPS[ PHILIPS SEMICONDUCTORS ]

页数：

24 页

PDF大小：

107 K

下载PDF手册
INTEGRATED CIRCUITS  
DATA SHEET  
TZA3050  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
Preliminary specification  
2002 Nov 06  
Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
CONTENTS  
10  
11  
12  
DC CHARACTERISTICS  
AC CHARACTERISTICS  
1
FEATURES  
APPLICATION INFORMATION  
1.1  
1.2  
1.3  
General  
Control  
Protection  
12.1  
Design equations  
12.1.1  
12.1.2  
12.1.3  
12.1.4  
12.1.5  
12.2  
Bias and modulation currents  
Average monitor current  
Alarm operating current  
Alarm monitor current  
Pulse width adjustment  
Burst mode application  
Average loop control  
2
3
4
5
6
7
APPLICATIONS  
GENERAL DESCRIPTION  
ORDERING INFORMATION  
BLOCK DIAGRAM  
12.3  
PINNING  
13  
PACKAGE OUTLINE  
SOLDERING  
FUNCTIONAL DESCRIPTION  
14  
7.1  
7.2  
7.3  
7.4  
7.5  
7.6  
7.7  
7.8  
7.9  
7.10  
7.11  
Data and clock input  
Retiming  
14.1  
Introduction to soldering surface mount  
packages  
Reflow soldering  
Wave soldering  
Manual soldering  
Pulse width adjustment  
Modulator output stage  
Average loop control  
Direct current setting  
Soft start  
Burst mode  
Alarm functions  
Enable  
14.2  
14.3  
14.4  
14.5  
Suitability of surface mount IC packages for  
wave and reflow soldering methods  
15  
16  
17  
DATA SHEET STATUS  
DEFINITIONS  
Reference block  
DISCLAIMERS  
8
9
LIMITING VALUES  
THERMAL CHARACTERISTICS  
2002 Nov 06  
2
Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
1
FEATURES  
General  
1.3  
Protection  
1.1  
• Alarm function on operating current  
• Alarm function on monitor current  
• Burst mode laser driver from 30 Mbits/s to 1.25 Gbits/s  
• Bias current from 10 mA up to 100 mA  
• Soft start-up on bias and modulation currents during  
power-up.  
• Modulation current from 6 mA up to 100 mA  
• Switch on and off time for bias and modulation currents  
below 100 ns  
2
APPLICATIONS  
• Burst mode laser driver.  
• Integrated burst mode switching and memory circuit  
• Rise and fall times typical 120 ps  
3
GENERAL DESCRIPTION  
• Jitter below 30 ps peak-to-peak value  
• Retiming function via external clock with disable option  
• Pulse width adjustment function with disable option  
The TZA3050 is a fully integrated laser driver for burst  
mode optical transmission systems with data rates up  
to 1.25 Gbits/s. The TZA3050 incorporates all necessary  
control and protection functions for a laser driver  
application with very few external components required  
and low power dissipation. The average-loop controls the  
average monitor current in a typical programmable range  
from 150 to 1300 µA. The average-loop settings are  
memorized internally between bursts of data. The bias and  
modulation currents have a fast switch on and off time of  
less than 100 ns.  
• Positive Emitter Coupled Logic (PECL), Low Voltage  
Emitter Coupled Logic (LVPECL) and Current Mode  
Logic (CML) compatible data and clock inputs  
• Internal common mode voltage available for AC-coupled  
data and clock inputs and for single-ended applications  
• 3.3 V supply voltage  
• DC-coupled laser for 3.3 and 5 V laser supply.  
1.2  
Control  
The design is made in the Philips BiCMOS RF process  
and is available in a HBCC32 package. The TZA3050 is  
intended for use in an application with a DC-coupled laser  
diode for both 3.3 and 5 V laser supply voltages.  
• Average power loop control  
• Optional direct setting of bias current  
• Direct setting of modulation current.  
The BIAS output is optimized for low voltage requirements  
giving a minimum of 1.25 V for 3.3 and 5 V laser supplies.  
4
ORDERING INFORMATION  
TYPE  
PACKAGE  
NUMBER  
NAME  
DESCRIPTION  
VERSION  
TZA3050VH  
HBCC32  
plastic, heatsink bottom chip carrier; 32 terminals; body 5 × 5 × 0.65 mm  
SOT560-1  
2002 Nov 06  
3
Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
5
BLOCK DIAGRAM  
i.c.  
CBIAS MODIN BIASOUT BIASIN  
MON  
AVR  
32  
30  
29  
28  
27  
26  
31  
25  
V
CCO  
I
BIAS  
24  
100 µA  
100 µA  
1
BIAS  
V
CCA  
V/I  
2
CURRENT  
CONVERSION  
100  
mA/V  
V
CCD  
enable  
burst  
I
AVR  
23  
22  
GND  
LA  
V/I  
100  
mA/V  
CONTROL BLOCK  
I
100  
Ω
100  
Ω
MON  
I
enable burst  
ref  
21  
20  
LA  
3
LAQ  
DIN  
20  
kΩ  
19  
18  
100  
Ω
PRE  
AMP  
POST  
AMP  
LAQ  
PULSE  
WIDTH  
ADJUST  
4
DINQ  
MUX  
20  
kΩ  
GND  
5
TEST  
I
mod  
D
C
6
CIN  
FF  
20  
kΩ  
100  
Ω
17  
PWA  
7
CINQ  
disable retiming:  
20  
kΩ  
V
V
< 0.3 V  
8
CIN, CINQ  
GND  
TZA3050  
V
− 1.32 V  
CCD  
9
ALRESET  
10  
kΩ  
1.4 V  
I
/12.5  
I
/750  
av(MON)  
BIAS  
R
Q
R
Q
ALARM  
OPERATING  
CURRENT  
ALARM  
MONITOR  
CURRENT  
3.3 V  
V AND I  
REFERENCE  
I
/1500  
mod  
+
20  
kΩ  
enable  
burst  
1.4 V  
10  
11  
12  
13  
14  
15  
16  
MCE158  
ALOP  
ALMON  
MAXOP VTEMP  
RREF  
MAXMON  
ENABLE  
Fig.1 Block diagram.  
4
2002 Nov 06  
Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
6
PINNING  
SYMBOL  
PIN  
DESCRIPTION  
GND  
die pad common ground plane for VCCA, VCCD, VCCO, RF and I/O; must be connected to ground  
VCCA  
1
analog supply voltage  
VCCD  
2
digital supply voltage  
DIN  
3
non-inverted data input (RF input)  
DINQ  
TEST  
CIN  
4
inverted data input (RF input)  
5
test pin; must be connected to ground  
6
non-inverted clock input (RF input)  
CINQ  
GND  
7
inverted clock input (RF input)  
8
ground  
ALRESET  
ENABLE  
ALOP  
ALMON  
MAXOP  
VTEMP  
MAXMON  
RREF  
PWA  
9
alarm reset input for alarm outputs ALMON and ALOP  
enable input for modulation and bias current switch on and off between bursts  
alarm output on operating current (open-drain)  
alarm output on monitor diode current (open-drain)  
threshold level input for alarm on operating current  
temperature dependent voltage output  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
threshold level input for alarm on monitor diode current  
reference current input; must be connected to ground with an accurate (1%) 10 kΩ resistor  
pulse width adjustment input  
GND  
ground  
LAQ  
inverted laser modulation output (RF output); output for dummy load  
inverted laser modulation output (RF output); output for dummy load  
non-inverted laser modulation output (RF output); output for laser  
non-inverted laser modulation output (RF output); output for laser  
ground  
LAQ  
LA  
LA  
GND  
BIAS  
current source output for the laser bias current  
supply voltage for the output stage and the laser diode  
input from the monitor photodiode (RF input)  
input for the bias current setting  
VCCO  
MON  
BIASIN  
BIASOUT  
MODIN  
CBIAS  
i.c.  
output of the control block for the bias current  
input for the modulation current setting  
output of the average loop; must be connected via a 100 nF external capacitor to GND  
internally connected  
AVR  
input for the optical average power level setting  
2002 Nov 06  
5
Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
V
V
1
32 31 30 29 28 27 26  
25  
CCA  
2
3
4
5
6
7
8
24  
23  
22  
21  
20  
19  
18  
BIAS  
GND  
LA  
CCD  
DIN  
DINQ  
TEST  
CIN  
LA  
TZA3050VH  
LAQ  
LAQ  
GND  
CINQ  
GND  
9
10 11 12 13 14 15 16  
17  
PWA  
MCE135  
Fig.2 Pin configuration.  
7
FUNCTIONAL DESCRIPTION  
Data and clock input  
7.3  
Pulse width adjustment  
7.1  
The on-duration of the laser current can be adjusted with a  
guaranteed range from −50 to +50 ps. The adjustment  
time is set by connecting a resistor, RPWA, to pin PWA. The  
maximum allowable capacitive load on pin PWA is 100 pF.  
Pulse width adjustment is disabled when pin PWA is  
short-circuited to ground.  
The TZA3050 operates with differential Positive Emitter  
Coupled Logic (PECL), Low Voltage Positive Emitter  
Coupled Logic (LVPECL) and Current-Mode Logic (CML)  
data and clock inputs with a voltage swing from 100 mV to  
1 V (p-p). It is assumed that both data and clock inputs  
carry a complementary signal with the specified  
7.4  
Modulator output stage  
peak-to-peak value (true differential excitation).  
The output stage is a high-speed bipolar differential pair  
with typical rise and fall times of 120 ps and with a  
modulation current source of up to 100 mA. The output  
stage of the TZA3050 is optimized for DC-coupled lasers.  
The circuit generates an internal common mode voltage  
for AC-coupled data inputs, clock inputs and single-ended  
applications.  
If VDIN > VDINQ, the modulation current is sunk by pin LA  
and corresponds to an optical ‘one‘ level of the laser.  
The modulation current switches between the LA and LAQ  
outputs. For a good RF performance the inactive branch  
carries a small amount of the modulation current.  
7.2  
Retiming  
The LA output is optimized for the laser, the LAQ output is  
optimized for the dummy load.  
The retiming function synchronizes the data with the clock  
to improve the jitter performance. The data latch switches  
on the rising edge of the clock input. The retiming function  
is disabled when both clock inputs are below 0.3 V.  
The BIAS output is optimized for low voltage requirements  
(1.25 V minimum).  
At start-up the initial polarity of the laser is unknown until  
the first rising edge of the clock input appears.  
2002 Nov 06  
6
Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
7.5  
Average loop control  
7.9  
Alarm functions  
The average power control loop maintains a constant  
average power level of the monitor current over  
temperature and lifetime of the laser. The average monitor  
current is programmable over a wide current range, from  
150 to 1300 µA typical, by tuning the setting resistor RAVR  
The maximum allowable capacitive load on pins AVR and  
BIASOUT is 100 pF.  
The TZA3050 features two alarm functions for the  
detection of excessive laser operating current and monitor  
diode current due to laser ageing, laser malfunctioning or  
a high laser temperature. The alarm threshold levels are  
programmed by a resistor or a current source. The  
operating current equals the bias current plus half of the  
modulation current.  
.
7.6  
Direct current setting  
7.10 Enable  
The TZA3050 can also operate in open-loop mode with  
direct setting of the bias and modulation currents. The bias  
and modulation current sources are transconductance  
amplifiers and the output currents are determined by the  
BIASIN and MODIN voltages respectively. The bias  
current source has a bipolar output stage with minimum  
output capacitance for optimum RF performance.  
A LOW level on the enable input disables the bias and  
modulation current sources: the laser is off. A HIGH level  
on the enable input or an open enable input switches both  
current sources on: the laser is operational.  
7.11 Reference block  
The reference voltage is derived from a band gap circuit  
and is available at pin RREF. An accurate (1%) 10 kΩ  
resistor has to be connected to pin RREF to provide the  
internal reference current. The maximum allowable  
capacitive load on pin RREF is 100 pF.  
7.7  
Soft start  
At power-up the bias and modulation current sources are  
released when VCCA > 2.7 V, the reference voltage has  
reached the correct value of 1.2 V and the voltage on  
pin ENABLE is HIGH.  
The reference voltage on the setting pins MAXOP,  
MAXMON, PWA and AVR is buffered and derived from  
the band gap voltage.  
The control loop starts with minimum bias and modulation  
current at power-up provided the device is enabled. The  
current levels increase until the input current on pin MON  
matches the programmed average level.  
The output voltage on pin VTEMP reflects the junction  
temperature of the TZA3050. The temperature coefficient  
of VVTEMP equals −2.2 mV/K.  
7.8  
Burst mode  
The TZA3050 is compliant with burst mode application.  
Fast switch on and off of bias and modulation currents is  
allowed in less than 100 ns via pin ENABLE.  
When internal average loop control is used, the average  
power settings can be maintained between two bursts of  
data via an external capacitor on pin CBIAS.  
During a burst, this capacitor defines the time constant of  
the loop. Between bursts, the capacitor is automatically  
disconnected from the internal circuitry and is used as a  
memory cell.  
A more complex memory cell can also be connected to  
pin CBIAS.  
2002 Nov 06  
7
Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
8
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referenced to ground; positive  
currents flow into the IC.  
SYMBOL  
PARAMETER  
digital supply voltage  
CONDITION  
MIN.  
−0.5  
MAX.  
+3.5  
UNIT  
VCCD  
VCCA  
VCCO  
V
analog supply voltage  
−0.5  
−0.5  
−0.5  
0.8  
+3.5  
+3.5  
+5.3  
4.1  
V
V
V
V
V
V
V
V
V
RF output supply voltage  
3.3 V laser supply  
5 V laser supply  
VCCO = 3.3 V  
Vo(LA)  
Vo(LAQ)  
VBIAS  
Vn  
output voltage at pin LA  
output voltage at pin LAQ  
bias voltage  
V
CCO = 5 V  
VCCO = 3.3 V  
CCO = 5 V  
VCCO = 3.3 V  
CCO = 5 V  
1.2  
4.5  
1.6  
4.5  
V
2.0  
5.2  
0.8  
3.6  
V
0.8  
4.1  
voltage on all other input and output pins  
analog inputs and outputs  
digital inputs and outputs  
input current on pins  
−0.5  
−0.5  
V
CCA + 0.5  
CCD + 0.5  
V
V
V
In  
MAXOP, MAXMON, RREF, PWA and AVR  
VTEMP and BIASOUT  
−1.0  
−1.0  
0
0
mA  
mA  
mA  
°C  
+1.0  
5.0  
ALOP, ALMON and MON  
ambient temperature  
Tamb  
Tj  
−40  
−40  
−65  
+85  
junction temperature  
+125  
+150  
°C  
Tstg  
storage temperature  
°C  
9
THERMAL CHARACTERISTICS  
In compliance with JEDEC standards JESD51-5 and JESD51-7.  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth(j-a)  
thermal resistance from 4 layer Printed-circuit board in still air with  
35  
K/W  
junction to ambient  
9 plated vias connected with the heatsink and  
the first ground plane in the PCB  
Rth(j-a)  
thermal resistance from HBCC32 die pad soldered to PCB  
junction to ambient  
60  
K/W  
2002 Nov 06  
8
Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
10 DC CHARACTERISTICS  
Tamb = −40 to +85 °C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 to 3.47 V; VCCD = 3.14 to 3.47 V;  
CCO = 3.14 to 3.47 V; RAVR = 7.5 kΩ; RMODIN = 6.2 kΩ; RBIASIN = 6.8 kΩ; RPWA = 10 kΩ; RRREF = 10 kΩ (1%);  
MAXMON = 13 kΩ; RMAXOP = 20 kΩ; positive currents flow into the IC; all voltages are referenced to ground; unless  
V
R
otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Supplies: pins VCCA, VCCD and VCCO  
VCCA  
VCCD  
VCCO  
analog supply voltage  
digital supply voltage  
RF output supply voltage  
3.14  
3.3  
3.3  
3.3  
5.0  
40  
3.47  
3.47  
3.47  
5.25  
55  
V
3.14  
3.14  
4.75  
−
V
3.3 V laser supply  
V
5 V laser supply  
V
ICCA  
ICCD  
ICCO  
analog supply current  
digital supply current  
RF output supply current  
mA  
mA  
mA  
−
45  
60  
pins LA and LAQ  
open-circuit; 3.3 and 5 V  
laser supply  
−
20  
30  
Ptot  
total power dissipation  
corel power dissipation  
VBIAS = 3.3 V; Imod = 16 mA;  
IBIAS = 20 mA; note 1  
−
−
412  
264  
−
−
mW  
mW  
Pcore  
excluding Io(LA), Io(LAQ)  
and IBIAS; PWA and retiming  
off  
Data and clock inputs: pins DIN and CIN  
Vi(p-p)  
input voltage swing  
(peak-to-peak value)  
Vi(DIN) = VCCD − 2 V to VCCD  
Vi(CIN) = VCCD − 2 V to VCCD  
;
100  
−
1000  
mV  
V
Vint(cm)  
internal common mode  
voltage  
AC-coupled inputs  
note 2  
−
V
CCD − 1.32  
−
VIO  
input offset voltage  
−10  
80  
−
0
+10  
130  
−
mV  
Ω
Zi(dif)  
Zi(cm)  
differential input impedance  
100  
10  
common mode input  
impedance  
kΩ  
Vi(CIN)(dis)  
input voltage for disabled  
retiming  
VCIN = VCINQ  
−
−
0.3  
V
Monitor photodiode input: pin MON  
Vi(MON)  
Zi(MON)  
input voltage  
Iav = 150 to 1300 µA  
Iav = 150 to 1300 µA  
0.9  
1.1  
27  
1.3  
V
input impedance  
−
−
Ω
Setting for average loop control: pins MON and AVR  
Iav(MON)(low)  
Iav(MON)(max)  
∆Iav(MON)  
low average monitor current IAVR > −250 µA  
setting  
−
−
150  
−
µA  
µA  
%
maximum average monitor IAVR = −50 µA  
current setting  
1150  
−10  
1.14  
1300  
−
relative accuracy of average temperature and VCCA  
+10  
1.26  
current on pin MON  
variations; IAVR = 550 µA  
Vref(AVR)  
reference voltage on  
pin AVR  
IAVR = −250 to −15 µA;  
CAVR < 100 pF  
1.20  
V
2002 Nov 06  
9
Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
SYMBOL  
Isink(AVR)  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
−15  
UNIT  
µA  
current sink on pin AVR  
−280  
−
Control loop bias output: pin BIASOUT  
Isource(BIASOUT) source current  
VBIASOUT = 0.5 to 1.5 V;  
CBIASOUT < 100 pF  
−
−
−
−200  
µA  
µA  
Isink(BIASOUT)  
sink current  
VBIASOUT = 0.5 to 1.5 V;  
CBIASOUT < 100 pF  
200  
−
Bias current source: pins BIASIN and BIAS  
gm(bias)  
bias transconductance  
VBIASIN = 0.5 to 1.5 V;  
89  
110  
131  
mA/V  
VBIAS = VCCO  
Isource(BIASIN)  
source current at  
pin BIASIN  
VBIASIN = 0.5 to 1.5 V  
−110  
−100  
−95  
µA  
IBIAS(max)  
IBIAS(min)  
IBIAS(dis)  
Vo(BIAS)  
maximum bias current  
minimum bias current  
bias current at disable  
output voltage on pin BIAS  
VBIASIN = 1.8 V  
100  
−
−
−
mA  
mA  
µA  
V
VBIASIN = 0 to 0.4 V  
VENABLE < 0.8 V  
0.2  
−
0.4  
100  
−
−
1.25  
−
Modulation current source: pin MODIN  
gm(mod)  
modulation  
VMODIN = 0.5 to 1.5 V;  
77  
95  
112  
mA/V  
transconductance  
VLA = VLAQ = VCCO  
Isource(MODIN)  
source current at  
pin MODIN  
VMODIN = 0.5 to 1.5 V  
−110  
−100  
−95  
µA  
Modulation current outputs: pins LA and LAQ  
Io(LA)(max)(on)  
Io(LA)(min)(on)  
Io(LA)(min)(off)  
maximum laser modulation VMODIN = 1.8 V;  
output current at LA on LA = VCCO = 3.3 V; note 3  
minimum laser modulation VMODIN = 0 to 0.4 V;  
100  
−
−
−
mA  
mA  
mA  
Ω
V
5
6
output current at LA on  
VLA = VCCO = 3.3 V; note 3  
minimum laser modulation VMODIN = 1.5 V;  
−
−
2
output current at LA off  
VLA = VCCO = 3.3 V; note 3  
Zo(LA), Zo(LAQ) output impedance LA and  
80  
−
100  
−
130  
200  
LAQ pins  
Io(LA)(dis)  
,
non-inverted and inverted  
laser modulation output  
current at disable  
VENABLE < 0.8 V  
µA  
Io(LAQ)(dis)  
Vo(LA)(min)  
minimum output voltage at VCCO = 3.3 V  
pin LA  
1.2  
1.6  
−
−
−
−
V
V
V
CCO = 5 V  
Enable function: pin ENABLE  
VIL  
LOW-level input voltage  
bias and modulation currents  
disabled  
−
−
0.8  
−
V
VIH  
HIGH-level input voltage  
internal pull-up resistance  
bias and modulation currents 2.0  
enabled  
−
V
Rpu(int)  
−
20  
−
kΩ  
2002 Nov 06  
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Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Alarm reset: pin ALRESET  
VIL  
LOW-level input voltage  
no reset  
reset  
−
−
0.8  
V
VIH  
HIGH-level input voltage  
2.0  
−
−
−
V
Rpd(int)  
internal pull-down  
resistance  
−
10  
kΩ  
Alarm operating current: pins MAXOP and ALOP  
Vref(MAXOP)  
reference voltage on  
pin MAXOP  
IMAXOP = 10 to 200 µA  
1.15  
−
1.2  
775  
−
1.25  
−
V
NMAXOP  
ratio of Ioper(alarm) and  
IMAXOP  
Ioper(alarm) = 7.5 to 150 mA  
VD(ALOP)L  
drain voltage at active alarm IALOP = 500 µA  
0
0.4  
V
V
Alarm monitor current: pins MAXMON and ALMON  
Vref(MAXMON)  
reference voltage on  
pin MAXMON  
IMAXMON = 10 to 200 µA  
1.15  
−
1.2  
15  
−
1.25  
−
NMAXMON  
ratio of IMON(alarm) and  
IMAXMON  
IMON(alarm) = 150 to 3000 µA  
VD(ALMON)L  
drain voltage at active alarm IALMON = 500 µA  
0
0.4  
V
Reference block: pins RREF and VTEMP  
VRREF  
reference voltage  
RRREF = 10 kΩ (1%);  
CRREF < 100 pF  
1.15  
1.14  
−
1.20  
1.20  
−2.2  
−
1.25  
1.27  
−
V
VVTEMP  
temperature dependent  
voltage  
Tj = 25 °C; CVTEMP < 2 nF;  
note 4  
V
TCVTEMP  
Isource(VTEMP)  
temperature coefficient of  
VVTEMP  
Tj = −25 to + 125 °C; note 4  
mV/K  
mA  
mA  
source current of  
pin VTEMP  
−
−1  
Isink(VTEMP)  
sink current of pin VTEMP  
1
−
−
Notes  
1. The total power dissipation Ptot is calculated with VBIAS = VCCO = 3.3 V and IBIAS = 20 mA. In the application VBIAS  
will be VCCO minus the laser diode voltage which results in a lower total power dissipation.  
2. The specification of the offset voltage is guaranteed by design.  
100  
3. The relation between the sink current Io(LA) and the modulation current Imod is: lo(LA) = Imod  
×
where  
--------------------------------  
100 + ZL(LA)  
ZL(LA) is the external load on pin LA. The voltage on pin MODIN programmes the modulation current Imod. This current  
is divided between ZL(LA) and the 100 Ω internal resistor connected to pins LA. When the modulation current is  
programmed to 100 mA, a typical ZL(LA) of 25 Ω will result in an Io(LA) current of 80 mA, while 20 mA flows via the  
internal resistor. This corresponds to a voltage swing of 2 V on the real application load.  
4. VVTEMP = 1.31 + TCVTEMP × Tj and Tj = Tamb + Ptot × Rth(j-a)  
.
2002 Nov 06  
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burst mode laser driver  
TZA3050  
11 AC CHARACTERISTICS  
Tamb = −40 to +85 °C; Rth(j-a) = 35 K/W; Ptot = 420 mW; VCCA = 3.14 to 3.47 V; VCCD = 3.14 to 3.47 V;  
CCO = 3.14 to 3.47 V; RAVR = 7.5 kΩ; RMODIN = 6.2 kΩ; RBIASIN = 6.8 kΩ; RPWA = 10 kΩ; RRREF = 10 kΩ (1%);  
MAXMON = 13 kΩ; RMAXOP = 20 kΩ; positive currents flow into the IC; all voltages are referenced to ground; unless  
V
R
otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
RF path  
BR  
bit rate  
average loop control  
0.03  
−
−
1.25  
Gbits/s  
ps  
J(LA)(p-p)  
jitter of pin LA output signal RL = 25 Ω  
−
30  
(peak-to-peak value)  
tr, tf  
rise and fall time of voltage 20% to 80%; RL = 25 Ω;  
−
120  
150  
ps  
on pin LA  
Imod = 30 mA  
tsu(D)  
th(D)  
data input set-up time  
data input hold time  
switch-on time at enable  
60  
60  
−
−
−
−
−
ps  
ps  
ns  
−
to(en)  
from 50% of enable to 90% of  
steady state typical bias and  
modulation current; note 1  
100  
to(dis)  
switch-off time at disable  
from 50% of enable to 10% of  
steady state typical bias and  
modulation current; note 1  
−
−
−
100  
ns  
Current control  
tcint  
average loop time constant average loop control;  
5
−
ms  
CCBIAS = 100 nF  
tburst(min)  
tidle(max)  
minimum burst time  
ENABLE pin HIGH  
30  
−
−
−
µs  
maximum time between two ENABLE pin LOW  
bursts  
−
8
ms  
Pulse width adjustment  
tPWA(min) minimum pulse width  
RPWA = 6.7 kΩ; CPWA < 100 pF  
RPWA = 10 kΩ; CPWA < 100 pF  
RPWA = 20 kΩ; CPWA < 100 pF  
−
−100  
0
−50  
−
ps  
ps  
ps  
adjustment on pins LA  
tPWA  
pulse width adjustment on  
pins LA  
−
tPWA(max)  
maximum pulse width  
adjustment on pins LA  
50  
100  
−
Note  
1. The switch-on and switch-off time at enable and disable given are the absolute maximum values. They depend  
strongly on the following parameters: bias current, modulation current, bias inductance and laser supply voltage.  
More detailed information available upon request  
2002 Nov 06  
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Preliminary specification  
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burst mode laser driver  
TZA3050  
12 APPLICATION INFORMATION  
12.1 Design equations  
handbook, halfpage  
105  
12.1.1 BIAS AND MODULATION CURRENTS  
I
= I  
The bias and modulation currents are determined by the  
voltages on pins BIASIN and MODIN. For average loop  
control the BIASIN voltage is applied by the BIASOUT pin  
and the MODIN voltage is applied by an external voltage  
mod o(LA)  
(mA)  
g
=
m(mod)  
source or an external resistor RMODIN  
.
100 mA/V  
For direct setting of bias and modulation currents, the  
BIASIN and MODIN voltages have to be applied by  
external voltage sources or by external resistors RBIASIN  
and RMODIN connected to the BIASIN and MODIN pins:  
I
o(LA)(min)  
5
0
0.5  
1.5  
IBIAS = (RBIASIN × 100 µA − 0.5 V) × gm(bias) [mA]  
Imod = (RMODIN × 100 µA − 0.5 V) × gm(mod) + 5 [mA]  
V
(V)  
MODIN  
MGT891  
LA current when LA output is on  
Vo(LA) = VCCO  
The transconductance gm(mod) defines the relation  
between the voltage on pin MODIN and the modulation  
current.  
Fig.4 Modulation current as a function of MODIN  
voltage.  
The bias and modulation current sources operate with an  
input voltage range from 0.5 to 1.5 V. The output current is  
at its minimum level for an input voltage below 0.4 V;  
see Figs 3 and 4. The graphs indicate the values with a  
load of 0 Ω. When the load is not zero, the relation  
between Io(LA) and Imod is given in Table  
12.1.2 AVERAGE MONITOR CURRENT  
The bias and modulation current sources are temperature  
compensated and keep the adjusted current level stable  
over the temperature range.  
“DC characteristics” Note 3.  
The bias and modulation currents increase with increasing  
resistor values for RBIASIN and RMODIN respectively; this  
allows resistor tuning to start at a minimum current level.  
handbook, halfpage  
The average monitor current Iav(MON) in average loop  
operation is determined by the source current of the  
AVR pin (IAVR). The current can be sunk by an external  
current source or by an external resistor, RAVR, connected  
to ground. The equation is:  
100  
I
BIAS  
(mA)  
g
=
m(bias)  
100 mA/V  
VAVR  
Iav(MON) = 1580 − 5.26 × IAVR = 1580 − 5.26 ×  
[µA]  
-------------  
RAVR  
The average monitor current increases with decreasing  
IAVR or increasing RAVR; this allows resistor tuning of RAVR  
to start at minimum IAVR current level (see Fig.5).  
I
BIAS(min)  
0.2  
0
0.5  
1.5  
V
(V)  
BIASIN  
The formula used to program AVR is valid for typical  
conditions; tuning is necessary to achieve absolute  
accuracy of the AVR value.  
MCE136  
Fig.3 Bias current as function of BIASIN voltage.  
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TZA3050  
I
av(MON)  
(µA)  
1300  
I
= 1580 − 5.26 × I  
µA  
AVR  
av(MON)  
150  
0
50  
250  
I
(µA)  
AVR  
MCE137  
Fig.5 Typical average monitor current as a function of IAVR  
.
12.1.3 ALARM OPERATING CURRENT  
VMAXMON  
I MON(alarm) = NMAXMON  
×
------------------------  
RMAXMON  
The operating current for the DC-coupled laser application  
equals the bias current plus half of the modulation current:  
As the detected IMON is an average current, the alarm  
threshold is a function of the burst mode timing. The  
formula can be used as a reference for a mode where  
signal is always present.  
Imod  
Ioper = IBIAS  
+
----------  
2
The alarm threshold Ioper(alarm) on the operating current is  
determined by the source current of the MAXOP pin. The  
current range for IMAXOP is from 10 to 200 µA which  
corresponds with an Ioper(alarm) from 7.5 to 150 mA. The  
IMAXOP current can be sunk by an external current source  
or by connecting RMAXOP to ground:  
12.1.5 PULSE WIDTH ADJUSTMENT  
The pulse width adjustment time is determined by resistor  
RPWA  
:
R
PWA – 10 kΩ  
t PWA = 200 ×  
[ps]  
------------------------------------  
RPWA  
VMAXOP  
I oper(alarm) = NMAXOP  
×
--------------------  
RMAXOP  
The tPWA typical range is from −100 to +100 ps, which  
corresponds with an RPWA resistance ranging from 6.7 kΩ  
minimum to 20 kΩ maximum (see Fig.6). The PWA  
function is disabled when the PWA input is short-circuited  
to ground, the tPWA is 0 ps for a disabled PWA function.  
The detection level is independent from burst mode timing.  
12.1.4 ALARM MONITOR CURRENT  
The alarm threshold IMON(alarm) on the monitor current is  
determined by the source current of the MAXMON pin. The  
current range for IMAXMON is from 10 to 200 µA, which  
corresponds with an IMON(alarm) from 150 to 3000 µA. The  
I
MAXMON current can be sunk by an external current source  
or by connecting RMAXMON to ground:  
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burst mode laser driver  
TZA3050  
handbook, halfpage  
100  
t
PWA  
(ps)  
6.7  
0
10  
20  
R
(kΩ)  
PWA  
−100  
MGT893  
Fig.6 Typical pulse width adjustment.  
12.2 Burst mode application  
Table 1 Typical time constant of the average loop  
In burst mode application, data flow is not constant, data  
(the ‘burst‘) is interrupted with significant idle times when  
no data is present and the laser is shut-down.  
CAPACITOR CCBIAS  
TIME CONSTANT (TYP.)  
10 nF  
100 nF  
470 nF  
<1 ms  
5 ms  
When using average loop control, the control is only done  
during a burst of data and the average value should be  
stored during idle time.  
30 ms  
Using a smaller CBIAS capacitor allows a faster loop  
recovery in short burst period applications, but it also  
means a shorter storage period. A 100 nF is considered as  
a convenient value, even in applications with short burst  
time (minimum 30 µs), and large idle time (maximum 8 ms)  
applications as shown in Fig.7.  
The TZA3050 requires only one external capacitor to  
perform this storage. A typical 100 nF lossless capacitor  
connected to pin CBIAS will define the time constant of the  
loop during bursts (typical 5 ms) and will also define the  
accuracy of the value stored between bursts. Tuning of the  
external capacitor allows tuning of the average loop time  
constant depending on the duty cycle and the burst  
duration.  
When pin ENABLE is LOW, an internal switch is opened  
and the external capacitor is connected to a  
handbook, halfpage  
Enable  
high-impedance point. When pin ENABLE is HIGH, the  
internal switch is closed and the external capacitor is  
connected to the internal average loop control circuit.  
MCE138  
burst > 30 µs  
idle < 8 ms  
The ENABLE pin also controls the on and off switch state  
of the bias and modulation current output stages resulting  
in burst-to-idle and idle-to-burst times below 100 ns on the  
full current range available, with a typical load of 25 Ω on  
pins LA and LAQ.  
Fig.7 Timing between burst and idle mode.  
At power-up, the memorized value on pin CBIAS is reset  
by connecting pin CBIAS internally to ground. The timing  
in Fig.7 does not take into account the initial charging of  
the storage circuit. This initial timing is directly proportional  
to the value of the CBIAS capacitor and to the duty cycle  
settings of the application.  
It is not recommended to use the TZA3050 without an  
external capacitor on pin CBIAS as this would result in a  
too small time constant, with the risk of pattern dependent  
behaviour. Table 1 shows time constants for different  
CBIAS capacitors.  
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TZA3050  
12.3 Average loop control  
A simplified application using the TZA3050 with average loop control and a DC-coupled laser at 3.3 or 5 V laser voltage  
is illustrated in Fig.8. The average power level is determined by the resistor RAVR. The average loop controls the bias  
current with the BIASOUT output connected to the BIASIN input. The modulation current is determined by the MODIN  
input voltage, which is generated by the resistor RMODIN and the 100 µA source current of the MODIN pin.  
The average loop setting is maintained between bursts with a capacitor connected to pin CBIAS. When pin ENABLE is  
HIGH, the internal average loop regulates the average power. When pin ENABLE is LOW, an internal switch is opened  
and the previous average loop state is stored on the CBIAS capacitor.  
3.3 V or 5 V  
laser with  
monitor diode  
V
V
CCA  
3.3 V  
3.3 V  
1
32 31 30 29 28 27 26  
25  
BIAS  
GND  
LA  
CCD  
DIN  
2
3
4
5
6
7
8
24  
23  
22  
21  
20  
19  
18  
DINQ  
TEST  
CIN  
LA  
TZA3050  
LAQ  
LAQ  
GND  
CINQ  
GND  
ALRESET  
9
10 11 12 13 14 15 16  
17  
MCE139  
Fig.8 TZA3050 with DC-coupled laser and average loop control.  
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13 PACKAGE OUTLINE  
HBCC32: plastic, heatsink bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm  
SOT560-1  
D
x
B
b
w M  
1
w M  
ball A1  
index area  
b
b
3
E
w M  
b
w M  
2
detail X  
x
C
A
B
C
e
1
e
y
v
A
E
e
4
e
2
1
1
32  
A
X
D
1
1
A
2
e
3
A
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
A
A
b
E
e
e
1
w
b
b
b
D
D
E
e
e
3
e
4
v
x
y
UNIT  
1
2
1
1
2
3
1
2
max.  
0.10 0.70 0.35 0.50 0.50 0.50 5.1  
0.05 0.60 0.20 0.30 0.35 0.35 4.9  
3.2 5.1  
3.0 4.9  
3.2  
3.0  
mm 0.80  
0.15 0.15 0.05  
0.5  
4.2  
4.2  
4.15 4.15  
0.2  
REFERENCES  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
99-09-10  
00-02-01  
SOT560-1  
MO-217  
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burst mode laser driver  
TZA3050  
14 SOLDERING  
If wave soldering is used the following conditions must be  
observed for optimal results:  
14.1 Introduction to soldering surface mount  
packages  
• Use a double-wave soldering method comprising a  
turbulent wave with high upward pressure followed by a  
smooth laminar wave.  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “Data Handbook IC26; Integrated Circuit Packages”  
(document order number 9398 652 90011).  
• For packages with leads on two sides and a pitch (e):  
– larger than or equal to 1.27 mm, the footprint  
longitudinal axis is preferred to be parallel to the  
transport direction of the printed-circuit board;  
There is no soldering method that is ideal for all surface  
mount IC packages. Wave soldering can still be used for  
certain surface mount ICs, but it is not suitable for fine pitch  
SMDs. In these situations reflow soldering is  
recommended.  
– smaller than 1.27 mm, the footprint longitudinal axis  
must be parallel to the transport direction of the  
printed-circuit board.  
The footprint must incorporate solder thieves at the  
downstream end.  
14.2 Reflow soldering  
• For packages with leads on four sides, the footprint must  
be placed at a 45° angle to the transport direction of the  
printed-circuit board. The footprint must incorporate  
solder thieves downstream and at the side corners.  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
Several methods exist for reflowing; for example,  
convection or convection/infrared heating in a conveyor  
type oven. Throughput times (preheating, soldering and  
cooling) vary between 100 and 200 seconds depending  
on heating method.  
Typical dwell time is 4 seconds at 250 °C.  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
Typical reflow peak temperatures range from  
215 to 250 °C. The top-surface temperature of the  
packages should preferable be kept below 220 °C for  
thick/large packages, and below 235 °C for small/thin  
packages.  
14.4 Manual soldering  
Fix the component by first soldering two  
diagonally-opposite end leads. Use a low voltage (24 V or  
less) soldering iron applied to the flat part of the lead.  
Contact time must be limited to 10 seconds at up to  
300 °C.  
14.3 Wave soldering  
Conventional single wave soldering is not recommended  
for surface mount devices (SMDs) or printed-circuit boards  
with a high component density, as solder bridging and  
non-wetting can present major problems.  
When using a dedicated tool, all other leads can be  
soldered in one operation within 2 to 5 seconds between  
270 and 320 °C.  
To overcome these problems the double-wave soldering  
method was specifically developed.  
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TZA3050  
14.5 Suitability of surface mount IC packages for wave and reflow soldering methods  
SOLDERING METHOD  
PACKAGE(1)  
WAVE  
not suitable  
REFLOW(2)  
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA  
suitable  
suitable  
HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, not suitable(3)  
HVSON, SMS  
PLCC(4), SO, SOJ  
LQFP, QFP, TQFP  
SSOP, TSSOP, VSO  
suitable  
suitable  
not recommended(4)(5) suitable  
not recommended(6)  
suitable  
Notes  
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy  
from your Philips Semiconductors sales office.  
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum  
temperature (with respect to time) and body size of the package, there is a risk that internal or external package  
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the  
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.  
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder  
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,  
the solder might be deposited on the heatsink surface.  
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.  
The package footprint must incorporate solder thieves downstream and at the side corners.  
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not  
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.  
6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is  
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.  
2002 Nov 06  
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TZA3050  
15 DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
16 DEFINITIONS  
17 DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2002 Nov 06  
20  
Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
NOTES  
2002 Nov 06  
21  
Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
NOTES  
2002 Nov 06  
22  
Philips Semiconductors  
Preliminary specification  
30 Mbits/s up to 1.25 Gbits/s  
burst mode laser driver  
TZA3050  
NOTES  
2002 Nov 06  
23  
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2002  
SCA74  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
403510/01/pp24  
Date of release: 2002 Nov 06  
Document order number: 9397 750 10204  
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