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UZTX601

型号:

UZTX601

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

3 页

PDF大小:

71 K

NPN SILICON PLANAR MEDIUM POWER  
DARLINGTON TRANSISTORS  
ISSUE 2 – JUNE 94  
ZTX600  
ZTX601  
FEATURES  
*
*
*
*
160 Volt VCEO  
1 Amp continuous current  
Gain of 5K at IC=1 Amp  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX600  
160  
ZTX601  
180  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
140  
160  
10  
4
Peak Pulse Current  
Continuous Collector Current  
IC  
1
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
ZTX600  
ZTX601  
UNIT CONDITIONS.  
MIN. TYP. MAX. MIN. TYP. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO 160  
V(BR)CEO 140  
V(BR)EBO 10  
ICBO  
180  
160  
10  
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
0.01  
10  
V
CB=140V  
VCB=160V  
CB=140V,T =100°C  
µA  
µA  
µA  
µA  
0.01  
V
10  
VCB=160V,T =100°C  
Emitter Cut-Off  
Current  
IEBO  
0.1  
10  
0.1  
VEB=8V  
µA  
Colllector-Emitter  
Cut-Off Current  
ICES  
VCES=140V  
VCES=160V  
µA  
µA  
10  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
0.75 1.1  
0.85 1.2  
0.75 1.1  
0.85 1.2  
V
V
IC=0.5A, IB=5mA*  
IC=1A, IB=10mA*  
Base-Emitter  
Saturation Voltage  
1.7  
1.9  
1.7  
1.9  
V
IC=1A, IB=10mA*  
Base-Emitter  
Turn-On Voltage  
1.5  
1.7  
1.5  
1.7  
V
IC=1A, VCE=5V*  
3-206  
ZTX600  
ZTX601  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated).  
PARAMETER  
SYMBOL  
ZTX600  
ZTX601  
UNIT CONDITIONS.  
MIN. TYP. MAX. MIN. TYP. MAX.  
Static Forward  
Current Transfer  
Ratio  
hFE  
1K  
2K  
1K  
1K  
100K 2K  
1K  
IC=50mA, VCE=10V*  
IC=0.5A, VCE=10V*  
IC=1A, VCE=10V*  
100K  
20K  
1K  
2K  
1K  
2K  
5K  
3K  
1K  
20K 2K  
1K  
2K  
5K  
3K  
IC=50mA, VCE=10V*  
IC=0.5A, VCE=10V*  
IC=1A, VCE=10V*  
Group A  
Group B  
5K  
10K  
5K  
10K  
IC=50mA, VCE=10V*  
IC=0.5A, VCE=10V*  
IC=1A, VCE=10V*  
10K 20K 100K 10K 20K 100K  
5K 10K 5K 10K  
Transition  
Frequency  
fT  
150 250  
150 250  
MHz IC=100mA,  
VCE=10V f=20MHz  
VEB=0.5V, f=1MHz  
VCE=10V, f=1MHz  
Input Capacitance Cibo  
60  
10  
90  
15  
60  
10  
90  
15  
pF  
pF  
Output  
Capacitance  
Cobo  
Switching Times  
ton  
toff  
0.75  
2.2  
0.75  
2.2  
IC=0.5A, VCE=10V  
IB1=IB2=0.5mA  
µs  
µs  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
R
= 50KΩ  
R = 5KΩ  
1.0  
0.8  
0.6  
0.4  
0.2  
0
R
R
= 1MΩ  
= ∞  
DC Conditions  
1
10  
100  
200  
VCE - Collector-Emitter Voltage (Volts)  
Voltage Derating Graph  
The maximum permissible operational temperature can be obtained from this graph using the  
following equation  
Power (max ) − Power (act)  
T
=
)
+25°C  
(
0.0057  
Tamb(max)= Maximum operating ambient temperature  
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE  
and source resistance (RS)  
Power(actual)= Actual power dissipation in users circuit  
3-207  
ZTX600  
ZTX601  
TYPICAL CHARACTERISTICS  
20k  
1.00  
0.90  
Group B  
VCE=10V  
16k  
12k  
8k  
IC/IB=100  
0.80  
0.70  
0.60  
Group A  
4k  
0
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
IC - Collector Current (Amps)  
IC - Collector Current (Amps)  
hFE v IC  
CE(sat)  
V
C
v I  
1.8  
1.5  
1.4  
1.6  
1.4  
VCE=5V  
1.3  
1.2  
1.1  
IC/IB=100  
1.2  
1.0  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
IC - Collector Current (Amps)  
BE(sat)  
IC - Collector Current (Amps)  
BE(on)  
C
v I  
V
C
v I  
V
Single Pulse Test at Tamb=25°C  
10  
1
0.1  
D.C.  
1s  
100ms  
10ms  
1.0ms  
0.1ms  
0.01  
0.001  
1
10  
100  
1000  
VCE - Collector Voltage (Volts)  
Safe Operating Area  
3-208  
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