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PXFC193808SVV1R250

型号：

PXFC193808SVV1R250

品牌：

INFINEON[ Infineon ]

页数：

10 页

PDF大小：

185 K

下载PDF手册
PXFC193808SV  
Thermally-Enhanced High Power RF LDMOS FET  
380 W, 28 V, 1805 – 1880 MHz  
Description  
The PXFC193808SV is a 380-watt LDMOS FET intended for use in  
multi-standard cellular power amplifier applications in the 1805 to 1880  
MHz frequency band. Features include input and output matching,  
high gain and a thermally-enhanced package with earless flange.  
PXFC193808SV  
Package H-37275G-6/2  
Manufactured with Infineon's advanced LDMOS process, this device  
provides excellent thermal performance and superior reliability.  
Features  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 2850 mA, ƒ = 1880 MHz  
•
•
Broadband internal input and output matching  
3GPP WCDMA signal,  
Typical pulsed CW performance, 1842.5 MHz, 28 V,  
10 dB PAR, 3.84 MHz bandwidth  
- Output power at P  
= 380 W  
1dB  
- Efficiency = 54.9%  
- Gain = 21 dB  
24  
20  
16  
12  
8
60  
40  
20  
0
•
•
Integrated ESD protection  
Gain  
ESD: Human Body Model, Class 2 (per ANSI/  
ESDA/JEDEC JS-001)  
Efficiency  
•
Capable of handling 10:1 VSWR @28 V, 200 W  
(1-C WCDMA) output power  
•
•
Low thermal resistance  
-20  
-40  
-60  
Pb-free and RoHS compliant  
PAR @ 0.01% CCDF  
4
c193808sv-gr1c  
0
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)  
= 28 V, I = 2880 mA, P = 80 W avg, ƒ = 1880 MHz.  
V
DD  
DQ  
OUT  
3GPP signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF.  
Characteristic  
Gain  
Symbol  
Min  
19.5  
28.5  
—
Typ  
21  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
Adjacent Channel Power Ratio  
ηD  
30.3  
–33.5  
—
%
ACPR  
–32  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 10  
Rev. 02.1, 2015-01-13  
PXFC193808SV  
DC Characteristics (each side)  
Characteristic  
Conditions  
Symbol  
Min  
65  
—
Typ  
—
Max  
—
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V(  
BR)DSS  
DS  
V
= 28 V, V = 0 V  
I
I
—
1
µA  
µA  
µA  
Ω
DS  
DS  
GS  
DSS  
DSS  
V
= 63 V, V = 0 V  
—
—
10  
1
GS  
Gate Leakage Current  
On-State Resistance  
Operating Gate Voltage  
V
GS  
= 10 V, V = 0 V  
DS  
I
—
—
GSS  
V
GS  
= 10 V, V = 0.1 V  
DS  
R
DS(on)  
—
0.19  
2.6  
—
V
= 28 V, I  
= 2.88 A  
V
GS  
2.3  
2.9  
V
DS  
DQ  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Operating Voltage  
V
DSS  
V
–6 to +10  
0 to +32  
225  
V
GS  
DD  
V
V
Junction Temperature  
Storage Temperature Range  
T
J
°C  
T
STG  
–65 to +150  
0.18  
°C  
Thermal Resistance (T  
= 70°C, 280 W CW)  
R
θJC  
°C/W  
CASE  
Ordering Information  
Type and Version  
Order Code  
Package and Description  
Shipping  
PXFC193808SV V1 R250 PXFC193808SVV1R250XTMA1  
H-37275G-6/2, ceramic open-cavity, push-pull, earless Tape & Reel, 250 pcs  
Data Sheet  
2 of 10  
Rev. 02.1, 2015-01-13  
PXFC193808SV  
Typical Performance (data taken in an Infineon production test fixture)  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 2850 mA, ƒ = 1842.5 MHz  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 2850 mA, ƒ = 1805 MHz  
3GPP WCDMA signal,  
10 dB PAR, 3.84 MHz bandwidth  
3GPP WCDMA signal,  
10 dB PAR, 3.84 MHz bandwidth  
24  
20  
16  
12  
8
60  
40  
20  
0
24  
20  
16  
12  
8
60  
40  
20  
0
Gain  
Gain  
Efficiency  
Efficiency  
-20  
-40  
-60  
-20  
-40  
-60  
PAR @ 0.01% CCDF  
4
4
PAR @ 0.01% CCDF  
0
c193808sv-gr1b  
0
c193808sv-gr1a  
25  
30  
35  
40  
45  
50  
55  
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
Average Output Power (dBm)  
Single-carrier WCDMA Broadband  
VDD = 28 V, IDQ = 2850 mA, POUT = 49 dBm,  
3GPP WCDMA signal, 10 dB PAR  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 2850 mA,  
ƒ = 1805.0, 1842.5, 1880.0 MHz,  
3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
60  
50  
40  
30  
20  
10  
0
1805.0 MHz  
1842.5 MHz  
1880.0 MHz  
Gain  
ACP Up & Low  
Efficiency  
Efficiency  
c193808sv-gr3a  
c193808sv-gr2  
1700  
1800  
1900  
2000  
27  
32  
37  
42  
47  
52  
57  
Average Output Power (dBm)  
Frequency (MHz)  
Data Sheet  
3 of 10  
Rev. 02.1, 2015-01-13  
PXFC193808SV  
Typical Performance (cont.)  
Pulsed CW Performance  
VDD = 28 V, IDQ = 2850 mA  
Single-carrier WCDMA Broadband  
VDD = 28 V, IDQ = 2850 mA, POUT = 49 dBm,  
3GPP WCDMA signal, 10 dB PAR  
24  
22  
20  
18  
16  
14  
12  
10  
70  
60  
50  
40  
30  
20  
10  
0
-10  
-15  
-20  
-25  
-30  
-35  
-40  
0
Gain  
-5  
-10  
-15  
-20  
-25  
-30  
Return Loss  
ACP Up  
1805.0 MHz  
1842.5 MHz  
1880.0 MHz  
ACP Low  
Efficiency  
c193808sv-gr3b  
c193808sv-gr4  
1700  
1800  
1900  
2000  
37  
42  
47  
52  
57  
Frequency (MHz)  
Output Power (dBm)  
Pulsed CW Performance  
at selected VDD  
IDQ = 2850 mA, ƒ = 1805 MHz  
Pulsed CW Performance  
at selected VDD  
IDQ = 2850 mA, ƒ = 1842.5 MHz  
24  
22  
20  
18  
16  
14  
12  
10  
70  
60  
50  
40  
30  
20  
10  
0
24  
22  
20  
18  
16  
14  
12  
10  
70  
60  
50  
40  
30  
20  
10  
0
Gain  
Gain  
VDD = 24 V  
VDD = 28 V  
VDD = 24 V  
VDD = 28 V  
V
DD = 32 V  
V
DD = 32 V  
Efficiency  
Efficiency  
c193808sv-gr5a  
c193808sv-gr5b  
33  
37  
41  
45  
49  
53  
57  
61  
33  
37  
41  
45  
49  
53  
57  
61  
Output Power (dBm)  
Output Power (dBm)  
Data Sheet  
4 of 10  
Rev. 02.1, 2015-01-13  
PXFC193808SV  
Typical Performance (cont.)  
Pulsed CW Performance  
CW Performance Small Signal  
at selected VDD  
Gain & Input Return Loss  
IDQ = 2850 mA, ƒ = 1880 MHz  
VDD = 28 V, IDQ = 3500 mA  
24  
22  
20  
18  
16  
14  
12  
10  
70  
60  
50  
40  
30  
20  
10  
0
24  
22  
20  
18  
16  
14  
12  
10  
0
-5  
Gain  
-10  
-15  
-20  
-25  
-30  
-35  
VDD = 24 V  
VDD = 28 V  
Gain  
V
DD = 32 V  
Efficiency  
Return Loss  
c193808sv-gr5c  
c193808sv-gr6  
33  
37  
41  
45  
49  
53  
57  
61  
1650 1700 1750 1800 1850 1900 1950 2000  
Frequency (MHz)  
Output Power (dBm)  
See next page for circuit impedance and device load pull performance  
Data Sheet  
5 of 10  
Rev. 02.1, 2015-01-13  
PXFC193808SV  
Broadband Circuit Impedance  
Z Source  
Z Load  
D1  
S
G1  
G2  
D2  
Frequency  
Z Source  
Z Load  
[MHz]  
1805.0  
1842.5  
1880.0  
[Ω]  
[Ω]  
0.59 –j5.21  
0.55 –j5.14  
0.55 –j5.07  
1.87 –j2.27  
1.92 –j2.38  
1.94 –j2.54  
Load Pull Performance  
D
Z Source  
Z Load  
G
S
Single side pulsed CW signal: 10 µsec, 10% duty cycle; 28 V, 1440 mA  
P
3dB  
Class AB  
Max Output Power  
Max Efficiency  
Freq  
[MHz]  
Zin  
[Ω]  
Zo  
[Ω]  
Gain  
[dB]  
P
[dBm]  
P
[W]  
PAE  
[%]  
Zo  
[Ω]  
Gain  
[dB]  
P
[dBm]  
P
OUT  
[W]  
Efficiency  
[%]  
OUT  
OUT  
OUT  
1805.0  
1842.5  
1880.0  
0.90 – j6.31  
1.26 – j7.08  
1.86 – j8.27  
5.32 – j5.58  
5.67 – j5.06  
6.17 – j4.71  
17.6  
17.5  
18.0  
54.64  
54.57  
54.52  
291  
286  
283  
55.8  
55.8  
54.8  
3.61 – j3.45  
3.60 – j3.43  
3.52 – j3.70  
19.3  
19.2  
19.6  
53.81  
53.77  
53.73  
240  
238  
236  
64.0  
63.7  
63.2  
Single side pulsed CW signal: 10 µsec, 10% duty cycle; 28 V, 1440 mA  
P
1dB  
Class AB  
Max Output Power  
Max Efficiency  
Freq  
[MHz]  
Zin  
[Ω]  
Zo  
[Ω]  
Gain  
[dB]  
P
P
PAE  
[%]  
Zo  
[Ω]  
Gain  
[dB]  
P
P
Efficiency  
[%]  
OUT  
OUT  
OUT  
OUT  
[W]  
[dBm]  
53.90  
53.86  
53.83  
[W]  
245  
243  
241  
[dBm]  
52.44  
52.36  
52.67  
1805.0  
1842.5  
1880.0  
0.90 – j6.31  
1.26 – j7.08  
1.86 – j8.27  
4.22 – j5.43  
4.30 – j5.28  
5.04 – j5.46  
19.8  
19.7  
20.0  
54.4  
55.0  
53.0  
2.89 – j2.95  
2.80 – j3.08  
2.79 – j3.85  
21.9  
21.8  
21.8  
175  
172  
185  
63.1  
62.8  
62.1  
Data Sheet  
6 of 10  
Rev. 02.1, 2015-01-13  
PXFC193808SV  
Reference Circuit, 1805 MHz to 1880 MHz  
DUT  
PXFC193808SV V1  
Reference Circuit Part No. LTN/PXFC193808SV V1  
PCB  
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66  
Find Gerber files for this reference circuit on the Infineon Web site at www.infineon.com/rfpower  
(60)  
RO4350, .020  
(62)  
RO4350, .020  
C804  
R802  
C802  
R804  
C801  
R803  
C215 C213  
VDD  
S2  
S3  
C210  
S1  
R801  
C803  
C101  
C216 C214  
L101  
R101  
C203  
C104  
C106  
C105  
C202  
C209  
C211  
C212  
RF_IN  
RF_OUT  
C217  
C107  
C208  
R102  
C103  
C201 C206  
VDD  
L102  
C102  
C207  
C205 C204  
PXFC193808FV_IN_01  
PXFC193808FV_OUT_01A  
p
x f c 1 9 3 8 0 8 f v _ C D _ 1 - 1 3 - 1 5  
Reference circuit assembly diagram (not to scale)  
Data Sheet  
7 of 10  
Rev. 02.1, 2015-01-13  
PXFC193808SV  
Reference Circuit (cont.)  
Reference circuit bill of Materials  
Component  
Input  
Description  
Manufacturer  
Part Number  
C101, C102  
C104, C103  
C106, C105  
C107  
Capacitor, 0.7 pF  
ATC  
ATC100A0R7JT250XT  
Capacitor, 10 µF  
Murata Electronics North America LLL31BC70G106MA01L  
Capacitor, 18 pF  
ATC  
ATC800A180GT250XT  
ATC100A1R0CW150XB  
UMK325C7106MM-T  
ECJ-1VB1H102K  
Capacitor, 1.0 pF  
ATC  
C801, C804  
C802  
Capacitor, 10 µF  
Taiyo Yuden  
Panasonic  
Capacitor, 0.001 µF  
Capacitor, 1 µF  
C803  
Murata Electronics North America GRM21BR71H105KA12L  
L101, L102  
R101, R102  
R801  
RF chip inductor, 22 nH  
Chip resistor, 10 ohms  
Chip resistor, 100 ohms  
Chip resistor, 1.3K ohms  
Chip resistor, 10 ohms  
Chip resistor, 1.2K ohms  
Potentiometer, 2K ohms  
Transistor  
ATC  
0805WL220JT  
ERJ-3GEYJ100V  
ERJ-3GEYJ101V  
ERJ-3GEYJ132V  
ERJ-3GEYJ100V  
ERJ-3GEYJ122V  
3224W-1-202E  
BCP56  
Panasonic – ECG  
Panasonic – ECG  
Panasonic – ECG  
Panasonic – ECG  
Panasonic – ECG  
Bourns Inc.  
R802  
R803  
R804  
S1  
S2  
Fairchild Semiconductor  
Texas Instruments  
S3  
Voltage regulator  
LM78L05ACM  
Output  
C201, C205, C215, C216  
C202, C209  
C203, C208  
C204, C206, C213, C214  
C207, C210  
C211, C212  
C217  
Capacitor, 10 µF  
Capacitor, 0.5 pF  
Capacitor, 2.1 pF  
Capacitor, 4.7 µF  
Capacitor, 220 µF  
Capacitor, 18 pF  
Capacitor, 0.3 pF  
Taiyo Yuden  
ATC  
UMK325C7106MM-T  
ATC100A0R5CW150XB  
ATC800A2R1BT250XT  
ATC  
Murata Electronics North America GRM32ER71H475KA88L  
Panasonic – ECG  
EEE-FP1V221AP  
ATC  
ATC  
ATC600F0R8BT250XT  
ATC100A0R3CW150XB  
Pinout Diagram (top view)  
S
D1  
D2  
V2  
V1  
Pin  
D1  
D2  
G1  
G2  
S
Description  
Drain Device 1 (Main)  
Drain Device 2 (Peak)  
Gate Device 1 (Main)  
Gate Device 2 (Peak)  
Source (flange)  
G2  
G1  
Lead connections for PXFC193808SV  
Data Sheet  
8 of 10  
Rev. 02.1, 2015-01-13  
PXFC193808SV  
Package Outline Specifications  
Package H-37275G-6/2  
30.61  
[1.205]  
+0.13  
-0.08  
2X 0.13  
(13.72  
+.005  
-.003  
[.540])  
.005  
[
]
2X'45° x .64  
6X 1.50±0.25  
[.059±.010]  
2X (1.27  
[.050])  
[.025]  
(SPH V1, V2)  
2X 30°  
2X 2.22  
[.087]  
2X 2.29  
[.090]  
+0.25  
6X 1.00  
C
L
-0.10  
+.010  
.039  
[
]
-.004  
V1  
D1  
D2  
V2  
10.16  
[.400]  
(15.14±0.50  
[.596±.020])  
C
C
L
L
9.14  
[.360]  
G1  
G2  
+.38  
-.13  
4X R0.51  
C
C
L
L
+.015  
R.020  
[
]
-.005  
4X 12.45  
[.490]  
5°±3°  
2X 26.16  
[1.030]  
4X 0.13±0.08  
[.005±.003]  
(SPH D1, D2, G1, G2)  
+0.25  
31.24±0.28  
4.58  
-0.13  
[1.230±.011]  
+.010  
.180  
[
]
C
-.005  
L
(1.63  
[0.064])  
H-37275G-6/2_gw_po_03.1_07-24-2013  
32.26  
[1.270]  
S
Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. All tolerances ± 0.127 [.005].  
4. Pins: D1, D2 – drain, G1, G2 – gate, V1, V2 – V , S (flange)–source.  
DD  
5. Lead thickness: 0.13 +0.051/–0.025 [.005 +.002/–.001].  
6. Gold plating thickness: 1.14 ±0.38 micron [45 ±15 microinch].  
Find the latest and most complete information tabout products and packaging at the Infineon Internet page  
www.infineon.com/rfpower  
Data Sheet  
9 of 10  
Rev. 02.1, 2015-01-13  
PXFC193808SV V1  
Revision History  
Revision Date  
Data Sheet Page  
Subjects (major changes at each revision)  
01  
02  
2014-07-24  
2015-01-09  
Advance  
All  
All  
Data Sheet reflects advance specification for product development  
Production  
Data Sheet represents released product specifications, including reference circuit and updated  
performance information.  
02.1  
2015-01-13  
Production  
8
BOM updated with correct part numbers and manufacturers.  
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
(highpowerRF@infineon.com)  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
Edition 2015-01-13  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© 2014 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-  
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device  
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
10 of 10  
Rev. 02.1, 2015-01-13  
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