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4N35M-V

型号：

4N35M-V

品牌：

EVERLIGHT[ EVERLIGHT ELECTRONICS CO., LTD ]

页数：

13 页

PDF大小：

1243 K

下载PDF手册
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
Schematic  
Features:  
• 4N2X series: 4N25, 4N26, 4N27, 4N28  
• 4N3X series: 4N35, 4N36, 4N37, 4N38  
• H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5  
• High isolation voltage between input and output  
(Viso=5000 V rms)  
Pin Configuration  
1. Anode  
• Creepage distance >7.62 mm  
• Operating temperature up to +110°C  
• Compact dual-in-line package  
• Pb free and RoHS compliant.  
• UL approved (No. E214129)  
• VDE approved (No. 132249)  
• SEMKO approved  
2. Cathode  
3. No Connection  
4. Emitter  
5. Collector  
6. Base  
• NEMKO approval  
• DEMKO approval  
• FIMKO approval  
• CSA approved  
• CQC approved  
Description  
The 4N2X, 4N3X, H11AX series of devices each consist of an infrared emitting diode optically  
coupled to a phototransistor.  
They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.  
Applications  
• Power supply regulators  
• Digital logic inputs  
• Microprocessor inputs  
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
1
www.everlight.com  
DATASHEET  
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
Absolute Maximum Ratings (Ta=25℃)  
Parameter  
Symbol  
Rating  
60  
Unit  
mA  
Forward current  
IF  
Peak forward current (t = 10µs)  
1
6
A
V
IFM  
VR  
Input  
Reverse voltage  
100  
3.8  
mW  
mW/°C  
V
Power dissipation (TA = 25°C)  
Derating factor (above 100°C)  
Collector-Emitter voltage  
PD  
80  
VCEO  
VCBO  
VECO  
VEBO  
Collector-Base voltage  
Emitter-Collector voltage  
Emitter-Base voltage  
80  
V
7
V
Output  
7
V
150  
9.0  
mW  
mW/°C  
Power dissipation (TA = 25°C)  
Derating factor (above 100°C)  
PC  
200  
5000  
-55 to 110  
PTOT  
VISO  
TOPR  
Total Power Dissipation  
Isolation Voltage*1  
mW  
V rms  
°C  
Operating Temperature  
Storage Temperature  
Soldering Temperature*2  
-55 to 125  
260  
TSTG  
TSOL  
°C  
°C  
Notes:  
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 & 3 are shorted together, and pins 4, 5 & 6 are shorted together.  
*2 For 10 seconds  
2
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
www.everlight.com  
DATASHEET  
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)  
Input  
Parameter  
Forward voltage  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Condition  
IF = 10mA  
-
-
-
1.2  
-
1.5  
10  
-
V
VF  
IR  
Reverse current  
µA  
pF  
VR = 6V  
Input capacitance  
30  
V = 0, f = 1MHz  
Cin  
Output  
Parameter  
Symbol  
ICBO  
Min  
Typ.  
Max.  
20  
Unit  
nA  
Condition  
VCB = 10V  
Collector-Base dark current  
-
-
-
-
4N2X  
50  
V
CE = 10V, IF=0mA  
CE = 60V, IF=0mA  
Collector-  
H11AX  
Emitter  
nA  
ICEO  
dark current  
4N3X  
-
-
50  
V
Collector-Emitter  
breakdown voltage  
Collector-Base  
breakdown voltage  
Emitter-Collector  
breakdown voltage  
Emitter-Base  
breakdown voltage  
Collector-Emitter  
capacitance  
80  
80  
7
-
-
-
-
-
-
-
V
V
BVCEO  
BVCBO  
BVECO  
BVEBO  
CCE  
Ic=1mA  
IC=0.1mA  
-
V
IE=0.1mA  
7
-
V
IE=0.1mA  
-
8
pF  
VCE=0V, f=1MHz  
* Typical values at Ta = 25°C  
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
www.everlight.com  
DATASHEET  
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
Transfer Characteristics  
Parameter  
4N35, 4N36,  
Symbol  
CTR  
Min  
Typ.  
Max.  
Unit  
Condition  
100  
50  
-
-
-
-
-
-
4N37  
H11A1  
Current  
Transfer  
ratio  
30  
H11A5  
IF = ±10mA ,VCE = 10V  
%
4N25, 4N26,  
4N38,  
20  
-
-
H11A2, H11A3  
4N27, 4N28,  
H11A4  
4N25, 4N26,  
4N27, 4N28  
4N35, 4N36,  
4N37  
10  
-
-
-
-
-
0.5  
0.3  
IF = 50mA, Ic = 2mA  
IF = 10mA, Ic = 0.5mA  
IF = 20mA, Ic = 4mA  
Collector-  
Emitter  
-
H11A1,H11A2,  
H11A3,H11A4,  
H11A5  
VCE(sat)  
V
saturation  
voltage  
-
-
0.4  
4N38  
-
1011  
-
-
-
1.0  
Isolation resistance  
-
-
RIO  
CIO  
Ω
V
IO = 500Vdc  
VIO = 0, f = 1MHz  
CC = 10V, IF = 10mA,  
Input-output capacitance  
0.2  
pF  
4N25, 4N26,  
4N27, 4N28,  
H11A1,H11A2,  
V
-
-
3
10  
12  
RL = 100Ω  
See Fig. 11  
H11A3,H11A4,  
Turn-on  
H11A5  
time  
Ton  
Toff  
µs  
µs  
VCC = 10V, IC = 2mA,  
4N35, 4N36,  
4N37, 4N38  
10  
RL = 100Ω, See Fig. 11  
4N25, 4N26,  
4N27, 4N28,  
H11A1,H11A2,  
H11A3,H11A4,  
H11A5  
VCC = 10V, IF = 10mA,  
-
-
3
9
10  
12  
RL = 100Ω  
See Fig. 11  
Turn-off  
time  
VCC = 10V, IC = 2mA,  
4N35, 4N36,  
4N37, 4N38  
RL = 100Ω, See Fig. 11  
* Typical values at Ta = 25°C  
4
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
www.everlight.com  
DATASHEET  
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
Typical Electro-Optical Characteristics Curves  
5
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
www.everlight.com  
DATASHEET  
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
VCC  
IF  
Input  
Pulse  
IC  
RL  
Output  
Input  
RBE  
10%  
90%  
Output  
Pulse  
RIN  
tr  
ton  
tf  
toff  
Figure 11. Switching Time Test Circuit & Waveforms  
6
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
www.everlight.com  
DATASHEET  
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
Order Information  
Part Number  
4NXXY(Z)-V  
or  
H11AXY(Z)-V  
Note  
XX = Part no. for 4NXX series (25, 26, 27, 28, 35, 36, 37 or 38)  
X
Y
Z
V
= Part no. for H11AX series (1, 2, 3, 4, or 5)  
= Lead form option (S, S1, M or none)  
= Tape and reel option (TA, TB or none).  
= VDE safety (optional)  
Option  
None  
Description  
Packing quantity  
65 units per tube  
65 units per tube  
1000 units per reel  
1000 units per reel  
1000 units per reel  
1000 units per reel  
Standard DIP-6  
M
Wide lead bend (0.4 inch spacing)  
S (TA)  
S (TB)  
S1 (TA)  
S1 (TB)  
Surface mount lead form + TA tape & reel option  
Surface mount lead form + TB tape & reel option  
Surface mount lead form (low profile) + TA tape & reel option  
Surface mount lead form (low profile) + TB tape & reel option  
7
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
www.everlight.com  
DATASHEET  
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
Package Dimension (Dimensions in mm)  
Standard DIP Type  
Option M Type  
8
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
www.everlight.com  
DATASHEET  
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
Option S Type  
Option S1 Type  
9
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
www.everlight.com  
DATASHEET  
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
Recommended pad layout for surface mount leadform  
Device Marking  
EL  
4N35  
YWWV  
Notes  
EL  
denotes Everlight  
4N35  
Y
WW  
V
denotes Device Number  
denotes 1 digit Year code  
denotes 2 digit Week code  
denotes VDE (optional)  
10  
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
www.everlight.com  
DATASHEET  
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
Tape & Reel Packing Specifications  
Option TA  
Option TB  
Direction of feed from reel  
Direction of feed from reel  
Tape dimensions  
Dimension No.  
A
B
Do  
D1  
E
F
Dimension (mm)  
10.4±0.1  
7.5±0.1  
1.5±0.1  
1.5+0.1/-0  
t
1.75±0.1  
7.5±0.1  
Dimension No.  
Po  
P1  
P2  
W
K
Dimension (mm)  
4.0±0.15  
12±0.1  
2.0±0.1  
0.35±0.03  
16.0±0.2  
4.5±0.1  
11  
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
www.everlight.com  
DATASHEET  
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
Precautions for Use  
1. Soldering Condition  
1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile  
Note:  
Reference: IPC/JEDEC J-STD-020D  
Preheat  
Temperature min (Tsmin  
)
150 °C  
200°C  
Temperature max (Tsmax  
)
Time (Tsmin to Tsmax) (ts)  
Average ramp-up rate (Tsmax to Tp)  
60-120 seconds  
3 °C/second max  
Other  
Liquidus Temperature (TL)  
217 °C  
Time above Liquidus Temperature (t L)  
Peak Temperature (TP)  
60-100 sec  
260°C  
Time within 5 °C of Actual Peak Temperature: TP - 5°C  
Ramp- Down Rate from Peak Temperature  
30 s  
6°C /second max.  
Time 25°C to peak temperature  
Reflow times  
8 minutes max.  
3 times  
.
12  
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
www.everlight.com  
DATASHEET  
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER  
4N2X Series  
4N3X Series  
H11AX Series  
DISCLAIMER  
1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for  
above specification.  
2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in  
these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the  
product which does not comply with the absolute maximum ratings and the instructions included in these  
specification sheets.  
3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t  
reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.  
13  
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3  
www.everlight.com  
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