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UZVP0545A

型号:

UZVP0545A

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

1 页

PDF大小:

49 K

P-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ISSUE 2 – MARCH 94  
ZVP0545A  
FEATURES  
*
*
450 Volt VDS  
RDS(on)=150  
D
G
S
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDS  
VALUE  
UNIT  
V
Drain-Source Voltage  
-450  
-45  
Continuous Drain Current at Tamb=25°C  
Pulsed Drain Current  
ID  
mA  
mA  
V
IDM  
-400  
Gate Source Voltage  
VGS  
± 20  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
700  
mW  
°C  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
SYMBOL MIN. MAX. UNIT CONDITIONS.  
PARAMETER  
Drain-Source Breakdown  
Voltage  
BVDSS  
-450  
V
ID=-1mA, VGS=0V  
Gate-Source Threshold  
Voltage  
VGS(th)  
-1.5  
-4.5  
20  
V
ID=-1mA, VDS= VGS  
Gate-Body Leakage  
IGSS  
IDSS  
nA  
VGS=± 20V, VDS=0V  
Zero Gate Voltage Drain  
Current  
-20  
-2  
VDS=-450 V, VGS=0  
VDS=-360 V, VGS=0V,  
T=125°C(2)  
µA  
mA  
On-State Drain Current(1)  
ID(on)  
-100  
40  
mA  
VDS=-25 V, VGS=-10V  
VGS=-10V,ID=-50mA  
Static Drain-Source  
On-State Resistance (1)  
RDS(on)  
150  
Forward Transconductance  
(1)(2)  
gfs  
mS  
VDS=-25V,ID=-50mA  
Input Capacitance (2)  
Ciss  
120  
20  
pF  
pF  
Common Source Output  
Capacitance (2)  
Coss  
VDS=-25 V, VGS=0V, f=1MHz  
Reverse Transfer  
Capacitance (2)  
Crss  
5
pF  
Turn-On Delay Time (2)(3)  
Rise Time (2)(3)  
td(on)  
tr  
td(off)  
tf  
10  
15  
15  
20  
ns  
ns  
ns  
ns  
VDD-25V, ID=-50mA  
Turn-Off Delay Time (2)(3)  
Fall Time (2)(3)  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%  
(2) Sample test.  
3-413  
(
3
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