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UZXM64N035L3

型号：

UZXM64N035L3

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

4 页

PDF大小：

62 K

下载PDF手册
ZXM64N035L3  
35V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS = 35V: RDS(on) = 0.060 : ID = 13A  
DESCRIPTION  
This new generation of high cell density planar MOSFETs from Zetex utilises a unique  
structure that com bines the benefits of low on-resistance with fast switching speed. This  
m akes them ideal for high efficiency, low voltage, power m anagem ent applications.  
FEATURES  
· Low on-resistance  
· Fast switching speed  
· Low threshold  
· Low gate drive  
· TO220 package  
APPLICATIONS  
· 100W Class D Audio Output Stage  
· Motor Control  
ORDERING INFORMATION  
DEVICE  
MULTIPLES  
ZXM64N035L3  
1000  
Front View  
DEVICE MARKING  
· ZXM6  
4N035  
ISSUE 1 - J UNE 2004  
1
ZXM64N035L3  
ABSOLUTE MAXIMUM RATING  
PARAMETER  
S YMBOL  
LIMIT  
35  
UNIT  
Dra in -S o u rce Vo lta g e  
Ga te -S o u rce Vo lta g e  
V
V
V
V
A
DS S  
GS  
Ϯ20  
Co n tin u o u s Dra in Cu rre n t (V =10V; T =25°C)(a )  
I
13  
GS  
C
D
(V =10V; T =25°C)(b )  
3.5  
GS  
A
(b )  
Pu ls e d Dra in Cu rre n t  
I
I
I
30  
2.4  
30  
A
A
A
DM  
(b )  
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e )  
S
(b )  
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e )  
S M  
(a )  
Po w e r Dis s ip a tio n a t T =25°C  
A
P
20  
W
D
Lin e a r De ra tin g Fa cto r  
160  
m W/°C  
(b )  
Po w e r Dis s ip a tio n a t T =25°C  
A
Lin e a r De ra tin g Fa cto r  
P
1.5  
12  
W
m W/°C  
D
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e  
T :T  
-55 to +150  
°C  
j
s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
VALUE  
6.25  
UNIT  
°C/W  
°C/W  
(a )  
J u n ctio n to Ca s e  
R
R
θJ C  
θJ A  
(b )  
J u n ctio n to Am b ie n t  
83.3  
ISSUE 1 - J UNE 2004  
2
ZXM64N035L3  
ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherwise stated)  
A
PARAMETER  
S YMBOL MIN. TYP.  
MAX. UNIT CONDITIONS  
S TATIC  
Dra in -S o u rce Bre a kd o w n Vo lta g e  
Ze ro Ga te Vo lta g e Dra in Cu rre n t  
Ga te -Bo d y Le a ka g e  
V
35  
V
I =250␮A, V =0V  
D GS  
(BR)DS S  
I
I
1
␮A  
n A  
V
V
=35V, V =0V  
DS S  
DS GS  
100  
V
=Ϯ20V, V =0V  
GS S  
GS DS  
Ga te -S o u rce Th re s h o ld Vo lta g e  
Static Drain-Source On-State Resistance  
V
1.0  
4.3  
I =250␮A, V = V  
DS GS  
D
GS (th )  
DS (o n )  
(1)  
R
0.060  
0.070  
V
V
=10V, I =3.7A  
D
⍀
⍀
GS  
GS  
=4.5V, I =1.9A  
D
(1)(3)  
Fo rw a rd Tra n s co n d u cta n ce  
g
S
V
=10V,I =1.9A  
D
fs  
DS  
(3)  
DYNAMIC  
In p u t Ca p a cita n ce  
C
C
C
950  
200  
50  
p F  
p F  
p F  
is s  
V
=25V, V =0V,  
DS  
GS  
Ou tp u t Ca p a cita n ce  
f=1MHz  
o s s  
rs s  
Re ve rs e Tra n s fe r Ca p a cita n ce  
(2) (3)  
S WITCHING  
Tu rn -On De la y Tim e  
Ris e Tim e  
t
t
t
t
4.2  
4.5  
20.5  
8
n s  
d (o n )  
n s  
r
V
R
=15V, I =3.7A  
D
DD  
=6.0⍀, V =10V  
G
GS  
Tu rn -Off De la y Tim e  
Fa ll Tim e  
n s  
d (o ff)  
f
n s  
To ta l Ga te Ch a rg e  
Ga te -S o u rce Ch a rg e  
Ga te -Dra in Ch a rg e  
S OURCE-DRAIN DIODE  
Q
Q
Q
27  
5
n C  
n C  
n C  
g
V
=24V,V =10V,  
GS  
DS  
g s  
g d  
ID=3.7A  
4.5  
(1)  
Dio d e Fo rw a rd Vo lta g e  
V
0.95  
V
T =25ЊC, I =3.7A,  
J S  
S D  
V
=0V  
GS  
(3)  
Re ve rs e Re co ve ry Tim e  
t
24.5  
19.1  
n s  
T =25ЊC, I =3.7A,  
J F  
d i/d t= 100A/␮s  
rr  
(3)  
Re ve rs e Re co ve ry Ch a rg e  
Q
n C  
rr  
NOTES  
(1) Measured under pulsed conditions. Width=300␮s. Duty cycle Յ 2% .  
(2) Switching characteristics are independent of operating junction tem perature.  
(3) For design aid only, not subject to production testing.  
ISSUE 1 - J UNE 2004  
3
ZXM64N035L3  
Package Outline  
Package Dim ensions  
DIM  
Millim e t e rs  
In ch e s  
Min  
3.56  
0.38  
1.15  
0.41  
14.23  
9.66  
2.29  
4.83  
0.51  
5.58  
2.04  
12.70  
ᎏ
Ma x  
4.82  
1.01  
1.77  
0.50  
16.51  
10.66  
2.79  
5.33  
1.39  
6.85  
2.92  
14.73  
6.35  
4.08  
3.42  
Min  
Ma x  
A
b
0.140  
0.015  
0.045  
0.016  
0.560  
0.380  
0.090  
0.190  
0.20  
0.189  
0.040  
0.070  
0.020  
0.650  
0.419  
0.110  
0.210  
0.055  
0.270  
0.115  
0.580  
0.250  
0.160  
0.134  
b 1  
c1  
D
E
e
e 1  
F
H1  
J 1  
L
0.230  
0.080  
0.500  
ᎏ
L1  
лP  
Q
3.54  
2.54  
0.139  
0.100  
© Zetex Sem iconductors plc 2004  
Europe  
Am ericas  
Asia Pacific  
Corporate Headquarters  
Zetex Gm bH  
Zetex Inc  
Zetex (Asia) Ltd  
Zetex plc  
Streitfeldstraß e 19  
D-81673 München  
Germ any  
700 Veterans Mem orial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
Lansdowne Road, Chadderton  
Oldham , OL9 9TY  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in m ajor countries world-wide.  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to www.zetex.com  
ISSUE 1 - J UNE 2004  
4
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