TM
CYTA4494D
Central
SURFACE MOUNT
DUAL, ISOLATED
COMPLEMENTARY NPN & PNP
HIGH VOLTAGE
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYTA4494D
type consists of one (1) NPN high voltage silicon
transistor and one (1) complementary PNP high
voltage silicon transistor packaged in an epoxy
molded SOT-228 surface mount case.
Manufactured by the epitaxial planar process,
this SUPERmini™ device is ideal for high
voltage applications.
SILICON TRANSISTORS
MARKING CODE: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
NPN (Q1)
450
PNP (Q2)
400
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
V
V
V
V
CBO
400
400
CEO
Emitter-Base Voltage
Collector Current
V
6.0
300
2.0
6.0
300
2.0
V
mA
W
EBO
I
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
-65 to +150
62.5
°C
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
UNITS
nA
nA
nA
nA
nA
V
I
V
V
V
V
V
=350V
=350V
=400V
=400V
=4.0V
100
500
CBO
CB
CE
CB
CE
BE
I
CES
I
100
500
CBO
I
CES
I
100
100
400
EBO
BV
I =100µA
450
CBO
C
BV
I =100µA
C
450
400
V
CES
BV
I =1.0mA
400
400
V
CEO
C
BV
I =10µA
E
6.0
6.0
V
EBO
V
I =1.0mA, I =0.1mA
0.40
0.50
0.75
0.75
40
0.40
0.50
0.75
0.75
40
V
CE(SAT)
C
B
V
I =10mA, I =1.0mA
V
CE(SAT)
C
B
V
I =50mA, I =5.0mA
V
CE(SAT)
C
B
V
I =10mA, I =1.0mA
V
BE(SAT)
C
B
h
V
=10V, I =1.0mA
FE
CE
CE
CE
CE
C
h
V
V
V
=10V, I =10mA
C
50
45
20
200
50
45
20
200
FE
h
=10V, I =50mA
FE
C
h
=10V, I =100mA
C
FE
R0 (14-March 2005)
