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UZTX605

型号:

UZTX605

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

3 页

PDF大小:

74 K

NPN SILICON PLANAR MEDIUM POWER  
DARLINGTON TRANSISTORS  
ISSUE 1 – MARCH 94  
ZTX604  
ZTX605  
FEATURES  
*
*
*
*
120 Volt VCEO  
1 Amp continuous current  
Gain of 2K at IC=1 Amp  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX604  
120  
ZTX605  
140  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
100  
120  
10  
4
Peak Pulse Current  
Continuous Collector Current  
IC  
1
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
ZTX604  
ZTX605  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
120  
100  
10  
140  
120  
10  
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
0.01  
10  
V
CB=100V  
CB=120V  
VCB=100V,T =100°C  
CB=120V,T =100°C  
µA  
µA  
µA  
µA  
0.01  
V
10  
V
Emitter Cut-Off  
Current  
IEBO  
0.1  
10  
0.1  
VEB=8V  
µA  
Colllector-Emitter  
Cut-Off Current  
ICES  
VCES=100V  
VCES=120V  
µA  
10  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
1.0  
1.5  
1.0  
1.5  
V
V
IC=250mA, IB=0.25mA*  
IC=1A, IB=1mA*  
Base-Emitter  
Saturation Voltage  
1.8  
1.8  
V
IC=1A, IB=1mA*  
Base-Emitter  
Turn-On Voltage  
1.7  
1.7  
V
IC=1A, VCE=5V*  
3-212  
ZTX604  
ZTX605  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated).  
PARAMETER  
SYMBOL  
ZTX604  
ZTX605  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Static Forward  
Current Transfer Ratio  
hFE  
2K  
5K  
2K  
0.5K  
2K  
5K  
IC=50mA, VCE=5V  
IC=500mA, VCE=5V*  
IC=1A, VCE=5V*  
100K 2K  
100K  
0.5K  
IC=2A, VCE=5V*  
Transition Frequency fT  
150  
150  
MHz  
IC=100mA, VCE=10V  
f=20MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
Cobo  
ton  
90 Typical  
15 Typical  
0.5 Typical  
1.6 Typical  
pF  
pF  
µs  
µs  
VEB=500mV, f=1MHz  
VCB=10V, f=1MHz  
IC=500mA, VCE=10V  
IB1=IB2=0.5mA  
toff  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
1.0  
R
= 20KΩ  
R
= 100KΩ  
R
R
= 1MΩ  
= ∞  
0.8  
0.6  
0.4  
0.2  
0
DC Conditions  
ZTX604  
ZTX605  
1
10  
100  
200  
V
CE  
- Collector-Emitter Voltage (Volts)  
Voltage Derating Graph  
The maximum permissible operational temperature can be obtained from this graph using the  
following equation  
Power(max) − Power(act)  
T
=
)
+25°C  
(
0.0057  
Tamb(max)= Maximum operating ambient temperature  
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE  
and source resistance (RS)  
Power(actual)= Actual power dissipation in users circuit  
3-213  
ZTX604  
ZTX605  
TYPICAL CHARACTERISTICS  
1.8  
1.6  
1.4  
-55°C  
+25°C  
+100°C  
2.5  
-55°C  
+25°C  
+100°C  
+175°C  
VCE=5V  
2.0  
1.5  
1.0  
0.5  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
IC/IB=100  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
IC - Collector Current (Amps)  
CE(sat)  
IC - Collector Current (Amps)  
FE  
C
v I  
h
C
v I  
V
2.2  
2.2  
2.0  
-55°C  
+25°C  
+100°C  
+175°C  
-55°C  
+25°C  
+100°C  
2.0  
1.8  
1.6  
1.8  
1.6  
1.4  
1.2  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
IC/IB=100  
1.0  
0.8  
0.6  
0.4  
VCE=5V  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
IC - Collector Current (Amps)  
BE(sat)  
IC - Collector Current (Amps)  
BE(on)  
C
v I  
V
C
v I  
V
Single Pulse Test at Tamb=25°C  
10  
1.0  
D.C.  
1s  
100ms  
10ms  
1.0ms  
100µs  
0.1  
ZTX605  
0.01  
1
10  
100  
1000  
VCE - Collector Voltage (Volts)  
Safe Operating Area  
3-214  
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