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IXBR42N170

型号：

IXBR42N170

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

164 K

下载PDF手册
Preliminary Technical Information  
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 1700V  
IC90 = 32A  
VCE(sat) ≤ 2.9V  
IXBR42N170  
ISOPLUS247TM  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
1700  
1700  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
b  
C
E
IC25  
IC90  
ICM  
TC = 25°C  
57  
32  
A
A
A
TC = 90°C  
G = Gate  
C = Collector  
E
= Emitter  
TC = 25°C, 1ms  
300  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 10Ω  
ICM = 100  
A
V
(RBSOA)  
Clamped inductive load  
VCES ≤ 1350  
Features  
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z Silicon chip on Direct-Copper Bond  
(DCB) substrate  
TJM  
Tstg  
z Isolated mounting surface  
z 2500V electrical isolation  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
FC  
Mounting force  
20..120 / 4.5..27  
Nm/lb.in.  
z Low gate drive requirement  
z High power density  
VISOL  
50/60 Hz, RMS  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA  
Applications:  
Weight  
5
g
z Switched-mode and resonant-mode  
power supplies  
z Uninterruptible power supplies (UPS)  
z Laser generator  
z Capacitor discharge circuit  
z AC switches  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
1700  
2.5  
V
V
5.5  
ICES  
VCE = 0.8 • VCES  
VGE = 0V  
50 μA  
1.5 mA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 42A, VGE = 15V, Note 1  
2.9  
V
V
TJ = 125°C  
2.7  
© 2008 IXYS CORPORATION, All rights reserved  
DS100043(10/08)  
IXBR42N170  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
ISOPLUS247 (IXBR) Outline  
(TJ = 25°C unless otherwise specified)  
gfS  
IC = 42A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
24  
32  
S
Cies  
Coes  
Cres  
3990  
225  
70  
pF  
pF  
pF  
Qg  
188  
29  
nC  
nC  
nC  
Qge  
Qgc  
IC = 42A, VGE = 15V, VCE = 0.5 • VCES  
76  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
37  
139  
340  
665  
ns  
ns  
ns  
ns  
Resistive Switching times, TJ = 25°C  
IC = 42A, VGE = 15V  
VCE = 850V, RG = 10Ω  
36  
188  
330  
740  
ns  
ns  
ns  
ns  
Resistive Switching times, TJ = 125°C  
IC = 42A, VGE = 15V  
VCE = 850V, RG = 10Ω  
RthJC  
RthCS  
0.62 °C/W  
°C/W  
0.15  
Reverse Diode  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
VF  
IF = 42A, VGE = 0V  
2.8  
V
IF = 21A, VGE = 0V, -diF/dt = 100A/μs  
trr  
1.32  
36  
μs  
VR = 100V  
IRM  
A
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBR42N170  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
300  
270  
240  
210  
180  
150  
120  
90  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
9V  
11V  
9V  
7V  
5V  
60  
7V  
30  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 84A  
9V  
I C = 42A  
7V  
5V  
I C = 21A  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
160  
140  
120  
100  
80  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
125ºC  
I C = 84A  
60  
42A  
40  
20  
21A  
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5  
VGE - Volts  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: B_42N170(7N)10-07-08  
IXBR42N170  
Fig. 8. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 7. Transconductance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = 25ºC  
25ºC  
125ºC  
TJ = 125ºC  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2  
VF - Volts  
IC - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
16  
14  
12  
10  
8
10,000  
1,000  
100  
VCE = 850V  
I
I
C = 42A  
C
ies  
G = 10mA  
C
oes  
6
4
C
res  
2
= 1 MHz  
5
f
10  
0
0
10  
15  
20  
25  
30  
35  
40  
0
20  
40  
60  
80  
100 120 140 160 180 200  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
1.00  
0.10  
0.01  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 125ºC  
RG = 10Ω  
dV / dt < 10V / ns  
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXBR42N170  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
360  
320  
280  
240  
200  
160  
120  
80  
360  
320  
280  
240  
200  
160  
120  
80  
RG = 10Ω  
RG = 10Ω  
VGE = 15V  
VGE = 15V  
VCE = 850V  
TJ = 125ºC  
VCE = 850V  
I C = 84A  
TJ = 25ºC  
I C = 42A  
40  
0
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
20 25 30 35 40 45 50 55 60 65 70 75 80 85  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
900  
800  
700  
600  
500  
400  
300  
380  
800  
700  
600  
500  
400  
300  
200  
100  
160  
140  
120  
100  
80  
tf  
t
d(off) - - - -  
tr  
t
d(on) - - - -  
360  
340  
320  
300  
280  
260  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 850V  
VCE = 850V  
I C = 42A  
I C = 84A  
60  
I C = 42A  
I C = 84A  
40  
20  
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
1200  
1100  
1000  
900  
1800  
1600  
1400  
1200  
1000  
800  
1300  
1200  
1100  
1000  
900  
440  
t f  
t
420  
400  
380  
360  
340  
320  
300  
280  
260  
240  
d(off) - - - -  
t f  
td(off  
) - - - -  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 850V  
VCE = 850V  
800  
I C = 42A  
800  
700  
700  
I C = 84A  
600  
600  
600  
500  
400  
TJ = 25ºC, 125ºC  
500  
400  
200  
400  
300  
300  
0
20 25 30 35 40 45 50 55 60 65 70 75 80 85  
IC - Amperes  
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
RG - Ohms  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: B_42N170(7N)10-07-08  
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