找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

ZXTN25060BZQTA

型号:

ZXTN25060BZQTA

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

8 页

PDF大小:

532 K

ZXTN25060BZQ  
60V NPN MEDIUM POWER TRANSISTOR IN SOT89  
Description  
Mechanical Data  
This Bipolar Junction Transistor (BJT) is designed to meet the  
stringent requirements of automotive applications.  
Case: SOT89  
Case Material: Molded Plastic. “Green” Molding Compound.  
UL Flammability Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish - Matte Tin Plated Leads, Solderable per  
MIL-STD-202, Method 208  
Features  
BVCEX > 150V  
BVCEO > 60V  
Weight: 0.055 grams (Approximate)  
BVECO > 6V  
IC = 5A Continuous Collector Current  
VCE(sat) < 70mV @ 1A  
Applications  
RCE(sat) = 48mΩ for a Low Equivalent On-Resistance  
Very Low Saturation Voltages  
Motor Driving (including DC fans)  
Solenoid, Relay and Actuator Drivers  
DC-DC Modules  
Excellent hFE Characteristics  
6V Reverse Blocking Capability  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
Power Switches  
MOSFET Gate Drivers  
SOT89  
C
E
E
C
B
C
B
Top View  
Pin-Out  
Top View  
Equivalent Circuit  
Ordering Information (Notes 4 & 5)  
Product  
ZXTN25060BZQTA  
Compliance  
Automotive  
Marking  
1C7  
Reel size (inches)  
Tape width (mm)  
12mm  
Quantity per reel  
7
1,000  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"  
and Lead-Free.  
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.  
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
SOT89  
1C7= Product Type Marking Code  
YWW = Date Code Marking  
Y = Last Digit of Year (ex: 5 = 2015)  
WW = Week Code (01 ~ 53)  
1C7  
YWW  
ZXTN25060BZQ  
Document number: DS38348 Rev. 1 - 2  
1 of 8  
www.diodes.com  
October 2015  
© Diodes Incorporated  
ZXTN25060BZQ  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
VCBO  
VCEX  
VCEO  
VECO  
VEBO  
IC  
Value  
150  
150  
60  
6
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage (Forward Blocking)  
Collector-Emitter Voltage  
V
V
Emitter-Collector Voltage (Reverse Blocking)  
Emitter-Base Voltage  
V
7
V
Continuous Collector Current  
Base Current  
5
A
1
A
IB  
Peak Pulse Current  
10  
A
ICM  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
Unit  
(Note 6)  
1.1  
1.8  
2.4  
4.46  
117  
68  
(Note 7)  
Power Dissipation  
(Note 8)  
W
PD  
(Note 9)  
(Note 6)  
(Note 7)  
Thermal Resistance, Junction to Ambient Air  
(Note 8)  
RθJA  
51  
°C/W  
(Note 9)  
28  
Thermal Resistance, Junction to Lead  
(Note 10)  
8
RθJL  
Operating and Storage Temperature Range  
-55 to +150  
°C  
TJ, TSTG  
ESD Ratings (Note 11)  
Characteristic  
Electrostatic Discharge - Human Body Model  
Electrostatic Discharge - Machine Model  
Symbol  
Value  
Unit  
V
JEDEC Class  
ESD HBM  
ESD MM  
4,000  
400  
3A  
C
V
Notes:  
6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured  
under still air conditions whilst operating in a steady-state.  
7. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.  
8. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.  
9. Same as Note 7 measured at t<5 seconds.  
10. Thermal resistance from junction to solder-point (on the exposed collector pad).  
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
ZXTN25060BZQ  
Document number: DS38348 Rev. 1 - 2  
2 of 8  
www.diodes.com  
October 2015  
© Diodes Incorporated  
ZXTN25060BZQ  
Thermal Characteristics and Derating Information  
100µ  
10µ  
1µ  
VCE(sat)  
25mm x 25mm  
Failure may occur  
in this region  
10  
1
Limited  
BV(BR)CEO=60V  
DC  
1s  
100ms  
100m  
10ms  
BV(BR)CEV=150V  
1ms  
Single Pulse  
Tamb=25°C  
100µs  
10  
Tamb=25°C  
20 40  
10m  
100m  
1
0
60  
80 100 120 140 160  
VCE Collector-Emitter Voltage (V)  
VCE Collector-Emitter Voltage (V)  
Safe Operating Area  
Safe Operating Area  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
50mm x 50mm  
25mm x 25mm  
15mm x 15mm  
0
20  
40  
60  
80 100 120 140 160  
Temperature (°C)  
Derating Curve  
ZXTN25060BZQ  
Document number: DS38348 Rev. 1 - 2  
3 of 8  
www.diodes.com  
October 2015  
© Diodes Incorporated  
ZXTN25060BZQ  
Thermal Characteristics and Derating Information (continued)  
120  
100  
80  
60  
40  
20  
0
100  
10  
1
Tamb=25°C  
Single Pulse  
Tamb=25°C  
see note (a)  
15mm x 15mm  
D=0.5  
D=0.2  
Single Pulse  
D=0.05  
D=0.1  
10  
100µ 1m 10m 100m  
1
100  
1k  
1k  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
1k  
1k  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Width (s)  
Pulse Power Dissipation  
100  
10  
1
70  
60  
50  
40  
30  
20  
10  
0
Tamb=25°C  
Single Pulse  
Tamb=25°C  
see note (b)  
25mm x 25mm  
D=0.5  
Single Pulse  
D=0.2  
D=0.05  
D=0.1  
100µ 1m 10m 100m  
1
10  
100  
100µ 1m 10m 100m  
1
10  
100  
Pulse Width (s)  
Pulse Power Dissipation  
Pulse Width (s)  
Transient Thermal Impedance  
100  
10  
1
50  
40  
30  
20  
10  
0
Tamb=25°C  
Single Pulse  
Tamb=25°C  
see note (c)  
50mm x 50mm  
D=0.5  
Single Pulse  
D=0.2  
D=0.05  
D=0.1  
100µ 1m 10m 100m  
1
10  
100  
100µ 1m 10m 100m  
1
10  
100  
Pulse Width (s)  
Pulse Power Dissipation  
Pulse Width (s)  
Transient Thermal Impedance  
ZXTN25060BZQ  
Document number: DS38348 Rev. 1 - 2  
4 of 8  
www.diodes.com  
October 2015  
© Diodes Incorporated  
ZXTN25060BZQ  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Collector-Base Breakdown Voltage  
150  
190  
V
BVCBO  
IC = 100µA  
IC = 100µA, RBE <1kΩ or  
-1V < VBE <0.25V  
Collector-Emitter Breakdown Voltage (Forward  
Blocking)  
150  
190  
V
BVCEX  
Collector-Emitter Breakdown Voltage (Note 12)  
Emitter-Base Breakdown Voltage  
60  
7
80  
V
V
BVCEO  
BVEBO  
IC = 10mA  
IE = 100µA  
8.0  
IE = 100µA, RBC <1kΩ or  
<0.25V > VBC >0.25V  
Emitter-Collector Breakdown Voltage (Reverse  
Blocking)  
6
6
8
V
V
BVECX  
BVECO  
ICBO  
Emitter-Collector Breakdown Voltage (Base Open)  
Collector-Base Cutoff Current  
7
IE = 100µA  
VCB = 120V  
50  
20  
nA  
µA  
<1  
VCB = 120V, TA = +100°C  
VCE = 120V, RBE <1kΩ or  
-1V < VBE <0.25V  
Collector-Emitter Cutoff Current  
Emitter-Base Cutoff Current  
100  
50  
nA  
nA  
ICEX  
IEBO  
<1  
VEB = 5.6V  
IC = 1A, IB = 100mA  
IC = 1A, IB = 50mA  
IC = 4A, IB = 400mA  
IC = 5A, IB = 500mA  
55  
70  
185  
240  
70  
90  
230  
305  
Collector-Emitter Saturation Voltage (Note 12)  
mV  
VCE(sat)  
Base-Emitter Saturation Voltage (Note 12)  
Base-Emitter Turn-On Voltage (Note 12)  
1,020  
960  
1,100  
1,050  
mV  
mV  
VBE(sat)  
VBE(on)  
IC = 5A, IB = 500mA  
IC = 5A, VCE = 2V  
200  
180  
90  
IC = 10mA, VCE = 2V  
IC = 1A, VCE = 2V  
IC = 2A, VCE = 50V  
IC = 5A, VCE = 5V  
100  
90  
45  
300  
DC Current Gain (Note 12)  
hFE  
20  
IC = 100mA, VCE = 5V  
f=100MHz  
Transitional Frequency  
185  
MHz  
fT  
Output Capacitance  
Delay Time  
11.5  
16  
20  
pF  
ns  
ns  
ns  
ns  
Cobo  
td  
VCB= 10V, f=1MHz  
  
  
  
  
  
  
  
  
VCC = 10V,  
Rise Time  
15  
tr  
ICC = 500mA  
IB1 = - IB2 = 50mA  
Storage Time  
Fall Time  
509  
57  
ts  
tf  
Note:  
12. Measured under pulsed conditions. Pulse width 300µs. Duty cycle ≤ 2%.  
ZXTN25060BZQ  
Document number: DS38348 Rev. 1 - 2  
5 of 8  
www.diodes.com  
October 2015  
© Diodes Incorporated  
ZXTN25060BZQ  
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
1
100m  
10m  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Tamb=25°C  
IC/IB=10  
IC/IB=100  
150°C  
100°C  
IC/IB=50  
IC/IB=20  
IC/IB=10  
25°C  
-55°C  
1m  
10m  
100m  
1
10  
10m  
100m  
1
10  
IC Collector Current (A)  
IC Collector Current (A)  
VCE(SAT) v IC  
VCE(SAT) v IC  
1.2  
1.0  
0.8  
0.6  
0.4  
375  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VCE=2V  
150°C  
IC/IB=10  
350  
325  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
-55°C  
25°C  
100°C  
25°C  
100°C  
-55°C  
150°C  
50  
25  
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC Collector Current (A)  
IC Collector Current (A)  
hFE v IC  
VBE(SAT) v IC  
VCE=2V  
-55°C  
1.0  
0.8  
0.6  
0.4  
0.2  
25°C  
100°C  
150°C  
1
1m  
10m  
100m  
10  
IC Collector Current (A)  
VBE(ON) v IC  
ZXTN25060BZQ  
Document number: DS38348 Rev. 1 - 2  
6 of 8  
www.diodes.com  
October 2015  
© Diodes Incorporated  
ZXTN25060BZQ  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.  
D1  
c
SOT89  
Dim Min Max  
Typ  
1.50  
0.56  
0.48  
0.38  
4.50  
A
B
1.401.60  
0.50 0.62  
H
E
B1 0.42 0.54  
c
D
0.35 0.43  
4.40 4.60  
D1 1.62 1.83 1.733  
B1  
L
D2 1.61 1.81  
2.40 2.60  
E2 2.05 2.35  
1.71  
2.50  
2.20  
1.50  
4.10  
2.78  
1.05  
B
E
e
e
-
-
D2  
H
3.95 4.25  
H1 2.63 2.93  
0.90 1.20  
8
L
°
(
4
X
L1 0.327 0.527 0.427  
0.20 0.40 0.30  
All Dimensions in mm  
)
H1  
z
E2  
A
L1  
D
z
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
X2  
Value  
Dimensions  
(in mm)  
1.500  
0.244  
0.580  
0.760  
1.933  
1.730  
3.030  
1.500  
0.770  
4.530  
C
G
X
X1  
X2  
Y
Y1  
Y2  
Y3  
Y4  
Y3  
Y1  
Y4  
X
G
Y
Y2  
C
X1  
ZXTN25060BZQ  
Document number: DS38348 Rev. 1 - 2  
7 of 8  
www.diodes.com  
October 2015  
© Diodes Incorporated  
ZXTN25060BZQ  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2015, Diodes Incorporated  
www.diodes.com  
ZXTN25060BZQ  
Document number: DS38348 Rev. 1 - 2  
8 of 8  
www.diodes.com  
October 2015  
© Diodes Incorporated  
厂商 型号 描述 页数 下载

ZETEX

ZXT1053AK 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

DIODES

ZXT1053AK 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

DIODES

ZXT1053AKQTC [ 暂无描述 ] 6 页

ZETEX

ZXT1053AKTC 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

DIODES

ZXT1053AKTC 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

ZETEX

ZXT10N15DE6 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

DIODES

ZXT10N15DE6 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

ZETEX

ZXT10N15DE6TA 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

DIODES

ZXT10N15DE6TA 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

ZETEX

ZXT10N15DE6TC 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.212723s