IXFK32N90P
IXFX32N90P
Symbol
Test Conditions
Characteristic Values
TO-264 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
13
22
S
Ciss
Coss
Crss
10.6
750
140
nF
pF
pF
RGi
Gate Input Resistance
1.1
Ω
td(on)
tr
td(off)
tf
48
80
68
26
ns
ns
ns
ns
Resistive Switching Times
Terminals: 1 - Gate
2 - Drain
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
3 - Source
4 - Drain
RG = 1Ω (External)
Millimeter
Inches
Dim.
Min.
Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
Qg(on)
Qgs
215
80
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
Qgd
98
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
RthJC
RthCS
0.13 °C/W
°C/W
D
25.91 26.16
0.15
E
e
19.81 19.96
5.46 BSC
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Source-Drain Diode
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
PLUS247TM Outline
IS
VGS = 0V
32
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
128
1.5
trr
QRM
IRM
300 ns
IF = 16A, -di/dt = 100A/μs
1.9
14
μC
A
VR = 100V, VGS = 0V
Terminals: 1 - Gate
2 - Drain
3 - Source
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
ADVANCE TECHNICAL INFORMATION
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
