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IXXN340N65B4

型号：

IXXN340N65B4

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

243 K

下载PDF手册
Preliminary Technical Information  
XPTTM 650V IGBT  
GenX4TM  
IXXN340N65B4  
VCES = 650V  
IC90 = 340A  
VCE(sat)  1.7V  
tfi(typ) = 80ns  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
E
SOT-227B, miniBLOC  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
E  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
G
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
ILRMS  
IC90  
TC = 25°C (Chip Capability )  
Leads Current Limit  
TC = 90°C  
520  
200  
340  
A
A
A
E   
C
G = Gate, C = Collector, E = Emitter  
ICM  
TC = 25°C, 1ms  
1200  
A
either emitter terminal can be used as  
Main or Kelvin Emitter  
SSOA  
VGEC= 15V, TVJ = 150°C, RG = 1  
ICM = 400  
A
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
μs  
(SCSOA)  
RG = 10, Non Repetitive  
Features  
PC  
TC = 25°C  
1500  
W
Optimized for Low Conduction and  
Switching Losses  
miniBLOC, with Aluminium Nitride  
Isolation  
International Standard Package  
Isolation Voltage 2500V~  
Optimized for 10-30kHz Switching  
Square RBSOA  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Short Circuit Capability  
High Current Handling Capability  
Weight  
30  
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
4.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
6.5  
25 A  
mA  
200 nA  
TJ = 150C  
2
IGES  
VCE = 0V, VGE = 20V  
VCE(sat)  
IC = 160A, VGE = 15V, Note 1  
TJ = 150C  
1.4  
1.4  
1.7  
V
V
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100887B(11/18)  
IXXN340N65B4  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
SOT-227B miniBLOC (IXXN)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
50  
85  
S
Cies  
Coes  
Cres  
11.25  
670  
nF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
390  
Qg(on)  
Qge  
Qgc  
553  
110  
253  
nC  
nC  
nC  
IC = 200A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
62  
76  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 100A, VGE = 15V  
4.40  
245  
80  
VCE = 400V, RG = 1  
Note 2  
Eof  
2.20  
3.50 mJ  
f
td(on)  
tri  
54  
65  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 100A, VGE = 15V  
Eon  
td(off)  
tfi  
5.55  
236  
110  
2.54  
mJ  
ns  
VCE = 400V, RG = 1  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.10 °C/W  
°C/W  
0.05  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXN340N65B4  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
13V  
GE  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
13V  
GE  
11V  
11V  
9V  
9V  
8V  
7V  
8V  
7V  
0
0
0
0
7
0.5  
1
1.5  
2
2.5  
3
0
1
2
3
4
5
6
7
8
9
10  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
3V  
GE  
V
= 15V  
GE  
11V  
I
= 300A  
C
9V  
7V  
I
= 140A  
C
I
= 70A  
C
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.5  
1
1.5  
2
2.5  
3
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
200  
180  
160  
140  
120  
100  
80  
T
J
= 25oC  
T
= - 40oC  
25oC  
J
T
J
= 150oC  
I
= 300A  
C
140A  
70A  
12  
60  
40  
20  
0
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
8
9
10  
11  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXXN340N65B4  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
160  
140  
120  
100  
80  
VCE = 325V  
T
J
= - 40oC  
I
I
C = 200A  
G = 10mA  
25oC  
150oC  
6
60  
40  
4
20  
2
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
450  
400  
350  
300  
250  
200  
150  
100  
50  
100,000  
10,000  
1,000  
= 1 MHz  
f
C
ies  
C
oes  
res  
T
= 150oC  
J
R
= 1  
Ω
G
C
dv / dt < 10V / ns  
100  
0
303540
0
5
10  
15  
20  
25  
100  
200  
300  
400  
500  
600  
700  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
aaaaaa  
0.2  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXN340N65B4  
Fig. 13. Inductive Switching Energy Loss vs.  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
6
5
4
3
2
1
7
6
5
4
3
2
1
13  
11  
9
E
R
E
E
E
off  
on  
off  
on  
T = 150oC , V = 15V  
G
= 1  
V
GE  
= 15V  
Ω ,  
J
GE  
V
= 400V  
CE  
V
= 400V  
CE  
T = 150oC  
J
7
I
= 100A  
C
T = 25oC  
J
5
I
= 50A  
C
3
1
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
240  
220  
200  
180  
160  
140  
120  
100  
80  
900  
800  
700  
600  
500  
400  
300  
200  
100  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
7
6
5
4
3
2
1
0
E
R
E
off  
on  
t f i  
td(off)  
T = 150oC, V = 15V  
= 1  
VGE = 15V  
Ω ,  
G
J
GE  
VCE = 400V  
V
= 400V  
CE  
IC = 100A  
I
= 50A  
C
I
= 100A  
C
IC = 50A  
1
2
3
4
5
6
7
8
9
10  
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
220  
200  
180  
160  
140  
120  
100  
80  
280  
275  
270  
265  
260  
255  
250  
245  
240  
235  
230  
180  
160  
140  
120  
100  
80  
320  
300  
280  
260  
240  
220  
200  
t f i  
td(off)  
t f i  
td(off)  
R
G
= 1 , V = 15V  
R
G
= 1 , V = 15V  
Ω
Ω
GE  
GE  
T = 150oC  
J
V
= 400V  
V
= 400V  
CE  
CE  
I
= 50A  
C
T = 25oC  
J
I
= 100A  
C
60  
40  
20  
60  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
25  
50  
75  
100  
125  
150  
IC - Amperes  
TJ - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXXN340N65B4  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
64  
62  
60  
58  
56  
54  
52  
50  
48  
46  
44  
200  
180  
160  
140  
120  
100  
80  
130  
120  
110  
100  
90  
t r i  
td(on)  
t r i  
td(on)  
T = 150oC, V = 15V  
R
G
= 1 , V = 15V  
Ω
GE  
J
GE  
T = 25oC  
V
= 400V  
CE  
J
V
= 400V  
CE  
I
= 100A  
C
T = 150oC  
J
80  
70  
I
= 50A  
C
60  
60  
40  
50  
20  
40  
0
30  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
130  
110  
90  
70  
65  
60  
55  
50  
45  
40  
t r i  
td(on)  
R
G
= 1 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
= 100A  
C
70  
50  
I
= 50A  
C
30  
10  
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXX_340N65B4(F9) 1-11-18-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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