IXSR 50N60BU1
Symbol
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
ISOPLUS247OUTLINE
J
min. typ. max.
gfs
I = IT; V = 10 V,
16
23
S
A
C
CE
IC(ON)
V
= 15 V, V = 10 V
210
GE
CE
Ciss
Coss
Crss
3850
pF
V
= 0 V, V = 25 V, f = 1 MHz
440
pF
GS
DS
50
pF
Qg
167
45
nC
nC
nC
Qge
Qgc
I = IT, V = 15 V, V = 0.5 V
C
GE
CE
CES
88
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
td(on)
tri
td(off)
tfi
70
70
ns
ns
Inductive load, TJ = 25°C
I = IT, V = 15 V
C
GE
V
= 0.8 V , R = 2.7 Ω
150
150
3.3
300 ns
300 ns
6.0 mJ
CE
CES
G
Dim.
Millimeter
Inches
Remarks: Switching times may increase
for V (Clamp) > 0.8 V , higher T or
increased R
Min.
Max. Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
CE
CES
J
Eoff
G
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
td(on)
tri
70
70
ns
ns
Inductive load, TJ = 125°C
I = IT, V = 15 V
C
GE
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
Eon
td(off)
tfi
2.5
mJ
ns
V
= 0.8 V , R = 2.7 Ω
CE
CES
G
230
230
Remarks: Switching times may increase
for V (Clamp) > 0.8 V , higher T or
increased R
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
ns
CE
CES
J
4.32
G
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
Eoff
4.8
mJ
0.50 K/W
K/W
RthJC
RthCK
0.15
SeeIXSK50N60BD1datasheetfor
characteristic curves.
ReverseDiode(FRED)
Characteristic Values
(T = 25°C, unless otherwise specified)
J
Symbol
VF
TestConditions
= IT, V = 0 V,
min. typ. max.
I
1.8
V
F
GE
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IRM
trr
I
V = 360 V
= IT, V = 0 V, -di /dt = 480 A/µs
19
35
33
50
A
F
GE
F
R
I
= 1 A; -di/dt = 200 A/µs; V = 30 V
ns
F
R
RthJC
0.75 K/W
Note: 1. I = 50A
T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
