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IXSP20N60B2D1

型号：

IXSP20N60B2D1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

174 K

下载PDF手册
IXSA 20N60B2D1  
IXSP 20N60B2D1  
VCES = 600 V  
IC25 = 35 A  
VCE(sat) = 2.5 V  
High Speed IGBT  
Short Circuit SOA Capability  
PreliminaryDataSheet  
Symbol  
TestConditions  
MaximumRatings  
TO-220 (IXSP)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C
E
IC25  
TC = 25°C  
35  
20  
11  
60  
A
A
A
A
IC110  
IF(110)  
ICM  
TC = 110°C  
TO-220 (IXSA)  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
VGE = 15 V, TJ = 125°C, RG = 82Ω  
ICM = 32  
@ 0.8 VCES  
A
μs  
W
Clamped inductive load  
G
C (TAB)  
C
tSC  
(SCSOA)  
VGE = 15 V, VCE = 360 V, TJ = 125°C  
RG = 82 Ω, non repetitive  
10  
PC  
TC = 25°C  
190  
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Weight  
2
g
• International standard packages  
• Guaranteed Short Circuit SOA  
capability  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
• Low VCE(sat)  
Maximum tab temperature for soldering for 10s  
260  
°C  
- for low on-state conduction losses  
• Highcurrenthandlingcapability  
• MOS Gate turn-on  
- drivesimplicity  
• Fast fall time for switching speeds  
up to 20 kHz  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
BVCES  
VGE(th)  
IC = 250 μA, VGE = 0 V  
IC = 750 μA, VCE = VGE  
600  
3.5  
V
6.5  
85  
V
Applications  
ICES  
VCE = VCES  
VGE = 0 V  
μA  
0.6 mA  
• AC motor speed control  
• Uninterruptiblepowersupplies(UPS)  
• Welding  
TJ = 125 °C  
IGES  
VCE = 0 V, VGE = ± 20 V  
± 100  
2.5  
nA  
V
VCE(sat)  
IC = 16A, VGE = 15 V  
Advantages  
• High power density  
DS99181B(12/05)  
© 2004 IXYS All rights reserved  
IXSA 20N60B2D1  
IXSP 20N60B2D1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-220 AB (IXSP) Outline  
(TJ = 25°C, unless otherwise specified)  
min. typ.  
max.  
IC = 16A; VCE = 10 V, Note 1  
3.5  
7.0  
S
Cies  
800  
pF  
Coes  
VCE = 25 V, VGE = 0 V  
f = 1 MHz  
76  
90  
pF  
pF  
20N60B2D1  
Cres  
28  
pF  
Qg  
33  
12  
12  
nC  
nC  
nC  
Qge  
Qgc  
IC = 16A, VGE = 15 V, VCE = 0.5 VCES  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
30  
30  
ns  
ns  
ns  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
IC = 16A, VGE = 15 V  
A
B
12.70 13.97 0.500 0.550  
14.73 16.00 0.580 0.630  
VCE = 0.8 VCES, RG = 10 Ω  
116  
126  
380  
Switching times may increase for VCE  
(Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
C
D
9.91 10.66 0.390 0.420  
3.54  
4.08 0.139 0.161  
E
F
5.85  
2.54  
6.85 0.230 0.270  
3.18 0.100 0.125  
Eoff  
600 μJ  
G
H
1.15  
2.79  
1.65 0.045 0.065  
5.84 0.110 0.230  
td(on)  
tri  
30  
30  
ns  
ns  
Inductive load, TJ = 125°C  
J
K
0.64  
2.54  
1.01 0.025 0.040  
BSC 0.100  
BSC  
IC = 16 A, VGE = 15 V  
Eon  
20N60B2 0.12  
20N60B2D1 0.42  
mJ  
mJ  
M
N
4.32  
1.14  
4.82 0.170 0.190  
1.39 0.045 0.055  
VCE = 0.8 VCES, RG = 10 Ω  
Switching times may increase for  
VCE (Clamp) > 0.8 • VCES, higher TJ  
or increased RG  
Q
R
0.35  
2.29  
0.56 0.014 0.022  
2.79 0.090 0.110  
td(off)  
tfi  
180  
210  
970  
ns  
ns  
μJ  
TO-263 (IXSA) Outline  
Eoff  
RthJC  
RthCS  
0.66 K/W  
K/W  
0.3  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 10A, VGE = 0 V  
TJ =150°C  
1.66  
2.66  
V
V
IRM  
trr  
IF = 12A, VGE = 0 V, -diF/dt = 100 A/μs  
VR = 100 V  
TJ = 100°C 1.5  
TJ = 100°C 90  
A
ns  
trr  
IF = 1 A; -di/dt = 100 A/μs; VR = 30 V  
30  
ns  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
RthJC  
2.5 K/W  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
.018  
.029  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXSA 20N60B2D1  
IXSP 20N60B2D1  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
@ 25 C  
º
º
C
32  
28  
24  
20  
16  
12  
8
70  
60  
50  
40  
30  
20  
10  
0
V
= 17V  
15V  
V
= 17V  
GE  
GE  
15V  
13V  
13V  
11V  
11V  
9V  
9V  
7V  
4
0
0.5  
0.5  
9
1
1.5  
2
2.5  
VC E - Volts  
3
3.5  
4
0
-50  
6
2
4
6
8
VC E - Volts  
10 12 14 16 18 20  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
º
C
32  
28  
24  
20  
16  
12  
8
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 17V  
15V  
GE  
V
= 15V  
GE  
I
I
= 32A  
= 16A  
C
C
13V  
11V  
9V  
7V  
4
I
= 8A  
C
0
-25  
0
25  
50  
TJ - Degrees Centigrade  
75  
100 125 150  
1
1.5  
2
2.5  
VCE - Volts  
3
3.5  
4
4.5  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
8
7
6
5
4
3
2
1
60  
50  
40  
30  
20  
10  
0
= 25ºC  
T
J
I
= 32A  
16A  
8A  
C
T = 125ºC  
J
25ºC  
-40ºC  
7
8
9
10 11 12 13 14 15 16  
VG E - Volts  
10 11 12 13 14 15 16 17 18 19 20  
VG E - Volts  
IXSA 20N60B2D1  
IXSP 20N60B2D1  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
9
8
7
6
5
4
3
2
1
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
I
I
= 32A  
C
C
T = 125ºC  
J
T = -40ºC  
J
V
V
= 15V  
GE  
CE  
25ºC  
125ºC  
= 400V  
= 16A  
= 8A  
I
C
0
10  
20  
30  
I C - Amperes  
40  
50  
60  
10  
20  
30  
40  
50 60  
R G - Ohms  
70  
80  
90 100  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
R
V
= 10Ω  
R
V
= 10Ω  
G
G
= 15V  
= 15V  
GE  
CE  
GE  
CE  
I = 32A  
C
V
= 400V  
V
= 400V  
T = 125ºC  
J
I
= 16A  
= 8A  
C
I
T = 25ºC  
J
C
25 35 45 55 65 75 85 95 105 115 125  
8
12  
16 20  
I C - Amperes  
24  
28  
32  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
450  
400  
350  
300  
250  
200  
150  
100  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
td(off)  
td(off)  
tfi - - - - -  
tfi  
R
V
- - - - -  
= 10Ω  
= 15V  
T = 125ºC  
J
V
V
= 15V  
G
T = 125ºC  
J
GE  
CE  
= 400V  
GE  
CE  
V
= 400V  
I
= 32A  
C
I
= 16A  
C
T = 25ºC  
J
I
= 8A  
20  
C
60  
10  
30  
40  
50  
R G - Ohms  
60  
70  
80  
90 100  
8
12  
16 20  
I C - Amperes  
24  
28  
32  
IXSA 20N60B2D1  
IXSP 20N60B2D1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
16  
14  
12  
10  
8
td(off)  
V
I
= 480V  
CE  
tfi  
- - - - -  
= 16A  
C
G
R
= 10Ω  
G
I
= 32A  
C
I
= 10mA  
V
V
= 15V  
GE  
= 400V  
CE  
I
= 16A  
C
6
I
= 8A  
C
4
I
= 32A  
C
2
0
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
0
5
10  
15  
20  
Q G - nanoCoulombs  
25  
30  
35  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
1,000  
100  
10  
33  
30  
27  
24  
21  
18  
15  
12  
9
f = 1 MHz  
C
ies  
C
oes  
T = 125ºC  
J
R
= 10Ω  
G
6
dV/dT < 10V/ns  
C
3
res  
0
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
100  
200  
300 400  
VC E - Volts  
500  
600  
Fig. 17. Maximum Transient Thermal Resistance  
1.00  
0.50  
0.10  
1
10  
100  
1,000  
Pulse Width - milliseconds  
IXSA 20N60B2D1  
IXSP 20N60B2D1  
30  
A
250  
nC  
10  
A
TVJ = 100°C  
R = 300 V  
IF = 5 A  
IF = 10 A  
IF = 20 A  
V
25  
200  
8
6
4
2
0
IRM  
TVJ = 150°C  
TVJ = 100°C  
IF  
Qr  
20  
15  
10  
5
IF = 5 A  
IF = 10 A  
IF = 20 A  
150  
100  
50  
TVJ = 100°C  
V
R = 300 V  
TVJ = 25°C  
0
0
100  
A/μs  
-diF/dt  
0
1
2
3
V
1000  
0
200 400 600 1000  
A/μs  
-diF/dt  
VF  
Fig. 18. Forward current IF versus VF  
2.0  
Fig. 19. Reverse recovery charge Qr  
Fig. 20. Peak reverse current IRM  
60  
0.3  
ns  
TVJ = 100°C  
IF = 10 A  
TVJ = 100°C  
V
100  
μs  
V
R = 300 V  
tfr  
VFR  
trr  
1.5  
Kf  
40  
20  
0
0.2  
IF = 5 A  
IF = 10 A  
IF = 20 A  
80  
1.0  
IRM  
60  
0.1  
tfr  
VFR  
0.5  
Qr  
40  
0.0  
0.
A/μs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
C
A/μs  
diF/dt  
TVJ  
-diF/dt  
Fig. 21. Dynamic parameters Qr, IRM  
10  
Fig. 22. Recovery time trr versus -diF/dt  
Fig. 23. Peak forward voltage VFR and  
Constants for ZthJC calculation:  
K/W  
1
i
Rthi (K/W)  
ti (s)  
1
2
1.449  
0.5578  
0.0052  
0.0003  
ZthJC  
0.1  
0.01  
DSEP 8-06B  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 24. Transient thermal resistance junction-to-case  
NOTE:Fig. 18toFig. 23showstypicalvalues  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508 5,049,961  
5,034,796 5,063,307  
5,187,117  
5,237,481  
5,381,025 6,162,665  
5,486,715  
6,306,728 B1 6,534,343  
6,259,123B1 6,404,065B1 6,583,505  
6,683,344  
6,710,405B2  
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