Advanced Technical Information
IXFH52N30P
IXFT52N30P
VDSS
ID25
= 300 V
= 52 A
PolarTM HiPerFET
Power MOSFET
RDS(on) ≤ 66 mΩ
trr ≤ 250 ns
N-Channel Enhancement Mode
Fast recovery intrinsic diode
Symbol
TestConditions
Maximum Ratings
TO-247AD (IXFH)
VDSS
VDGR
T
= 25°C to 150°C
300
300
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
VGSM
30
V
ID25
IDM
TC = 25°C
52
A
A
TC = 25°C, pulse width limited by TJM
150
G
D
S
IAR
TC = 25°C
52
A
EAR
EAS
TC = 25°C
TC = 25°C
30
mJ
J
1.0
TO-268 (IXFT)
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
TC = 25°C
400
W
G
S
D (TAB)
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate
S = Source
D = Drain
TAB = Drain
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
Md
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-268
5.5
5.0
g
g
Features
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
z
z
z
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 30 VDC, VDS = 0
300
V
V
2.5
5.0
Advantages
100 nA
z
Easy to mount
z
IDSS
VDS = VDSS
VGS = 0 V
25 µA
250 µA
Space savings
z
TJ = 125°C
High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
57
66 mΩ
PolarHTTM DMOStransistors
utilize proprietary designs and
process. US patent is pending.
DS99197(7/04)
© 2004 IXYS All rights reserved
