ZVN4206G
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BVDSS
60
V
ID=1m A, VGS=0V
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
1.3
3
V
I =1m A, VDS= VGS
D
100
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage Drain Current
IDSS
10
100
V
DS=60V, VGS=0V
µA
µA
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current (1)
ID(on)
3
A
VDS=25V, VGS=10V
VGS=10V, ID=1.5A
Static Drain-Source On-State
Resistance (1)
RDS(on)
1
1.5
Ω
Ω
VGS=5V, ID=0.5A
Forward Transconductance (1)(2) gfs
300
m S
pF
pF
VDS=25V,ID=1.5A
Input Capacitance (2)
Ciss
Coss
100
60
Com m on Source Output
Capacitance (2)
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss
20
8
pF
ns
ns
ns
ns
Turn-On Delay Tim e (2)(3)
Rise Tim e (2)(3)
td(on)
tr
12
12
15
VDD≈25V, ID=1.5A, VGEN =10V
Turn-Off Delay Tim e (2)(3)
Fall Tim e (2)(3)
td(off)
tf
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
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