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IXBT32N300HV

型号：

IXBT32N300HV

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

311 K

下载PDF手册
Advance Technical Information  
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 3000V  
IC110 = 32A  
VCE(sat) 3.2V  
IXBT32N300HV  
IXBH32N300HV  
TO-268HV (IXBT)  
Symbol  
Test Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TC = 25°C to 150°C  
3000  
3000  
V
V
E
TJ = 25°C to 150°C, RGE = 1M  
C (Tab)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-247HV (IXBH)  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
80  
32  
280  
A
A
A
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 10  
Clamped Inductive Load  
ICM = 80  
VCES 2400  
A
V
G
E
C (Tab)  
C
PC  
TC = 25°C  
400  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
E = Emitter  
C
= Collector  
TJM  
Tstg  
Tab = Collector  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-247HV)  
1.13/10  
Nm/lb.in.  
Weight  
TO-268HV  
TO-247HV  
4
6
g
g
High Blocking Voltage  
High Voltage Packages  
Low Conduction Losses  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Advantages  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
3000  
2.5  
V
V
Low Gate Drive Requirement  
High Power Density  
5.0  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
50 μA  
mA  
TJ = 125°C  
TJ = 125°C  
2
Applications:  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 32A, VGE = 15V, Note 1  
2.8  
3.5  
3.2  
V
V
Switched-Mode and Resonant-Mode  
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
AC Switches  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100706(02/16)  
IXBT32N300HV  
IXBH32N300HV  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfS  
IC = 32A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
16  
26  
S
Cies  
Coes  
Cres  
3140  
124  
40  
pF  
pF  
pF  
Qg  
142  
20  
nC  
nC  
nC  
Qge  
Qgc  
IC = 32A, VGE = 15V, VCE = 1000V  
57  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
50  
185  
160  
720  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
IC = 32A, VGE = 15V  
VCE = 1250V, RG = 2  
58  
515  
165  
630  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 32A, VGE = 15V  
VCE = 1250V, RG = 2  
RthJC  
RthCS  
0.31 °C/W  
°C/W  
(TO-247HV)  
0.21  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
trr  
IF = 32A, VGE = 0V  
2.1  
V
μs  
A
IF = 16A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
1.5  
33  
IRM  
Note 1: Pulse Test, t 300μs, Duty Cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBT32N300HV  
IXBH32N300HV  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 25V  
GE  
V
= 25V  
GE  
60  
50  
40  
30  
20  
10  
0
20V  
15V  
20V  
15V  
10V  
10V  
5V  
5V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 25V  
GE  
60  
50  
40  
30  
20  
10  
0
V
= 15V  
GE  
20V  
15V  
I
= 64A  
C
10V  
I
= 32A  
C
I
= 16A  
C
5V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 25ºC  
I C = 64A  
T
J
= 125ºC  
25ºC  
- 40ºC  
32A  
16A  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
VGE - Volts  
VGE - Volts  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXBT32N300HV  
IXBH32N300HV  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
45  
40  
35  
30  
25  
20  
15  
10  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 25ºC  
T
J
= 125ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
0.5  
1
1.5  
2
2.5  
3
IC - Amperes  
VF - Volts  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
16  
14  
12  
10  
8
10,000  
1,000  
100  
f
= 1 MHz  
V
= 1kV  
CE  
I
I
= 32A  
C
G
= 10mA  
C
ies  
C
C
oes  
res  
6
4
2
0
10  
0
20  
40  
60  
80  
100  
120  
140  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
1
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0.1  
0.01  
0.001  
T
= 125ºC  
J
R
= 10Ω  
G
dv / dt < 10V / ns  
500  
750  
1000 1250 1500 1750 2000 2250 2500 2750 3000  
VCE - Volts  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBT32N300HV  
IXBH32N300HV  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
800  
700  
600  
500  
400  
300  
200  
100  
0
800  
700  
600  
500  
400  
300  
200  
100  
0
R
= 2Ω, V = 15V  
GE  
G
R
= 2Ω, V = 15V  
GE  
G
V
= 1250V  
CE  
V
= 1250V  
CE  
T
J
= 125ºC  
I
= 32A  
C
I
= 64A  
C
T
J
= 25ºC  
50  
15  
20  
25  
30  
35  
40  
45  
55  
60  
65  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
200  
190  
180  
170  
160  
150  
140  
130  
120  
650  
600  
550  
500  
450  
400  
350  
80  
t f  
t
d(off) - - - -  
t r  
t
d(on) - - - -  
75  
70  
65  
60  
55  
50  
R
G
= 2Ω, V = 15V  
GE  
T
J
= 125ºC, V = 15V  
GE  
V
= 1250V  
CE  
V
= 1250V  
CE  
I
I
= 32A  
= 64A  
C
C
I
= 32A  
C
I
= 64A  
C
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
450  
1400  
1200  
1000  
800  
230  
tf  
td(off  
) - - - -  
t f  
t
d(off) - - - -  
400  
350  
300  
250  
200  
150  
100  
50  
210  
190  
170  
150  
130  
110  
T
J
= 125ºC, V = 15V  
GE  
R
G
= 2Ω, V = 15V  
GE  
V
= 1250V  
CE  
V
= 1250V  
CE  
I
= 32A  
C
600  
I
= 64A  
C
T
J
= 125ºC, 25ºC  
400  
200  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
RG - Ohms  
IC - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXBT32N300HV  
IXBH32N300HV  
TO-268HV (IXBT)  
PINS:  
1 - Gate 2 - Emitter  
3 - Collector  
TO-247HV (IXBH)  
PINS:  
1 - Gate 2 - Emitter  
3,4 - Collector  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: B_32N300(8P)03-02-09  
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