4N30
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Avalanche Current
300
±20
V
4
A
IAR
4
A
Single Pulsed
Repetitive
EAS
52
mJ
mJ
W
Avalanche Energy
EAR
PD
52
Power Dissipation
1.14
+150
-55~+150
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
ID=250µA, VDS=0V
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
300
V
VDS=300V
1
µA
Forward
Reverse
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
±100 nA
±100 nA
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
ID=250µA
2
4
2
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS=10V, ID=4A
ꢀ
CISS
COSS
CRSS
850 pF
250 pF
200 pF
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
VDD=50V, ID=4A, IG=100µA,
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
3.2
0.64
1.6
6
nC
nC
nC
ns
ns
ns
ns
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
VGS=10V
38
VDD=30V, ID=4A, RG=25ꢀ,
VGS=0~10V
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
11
13
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
4
A
A
V
ISM
VSD
16
IS=4A
0.1
1.48
UNISONIC TECHNOLOGIES CO., LTD
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VER.A
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