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ZXTP2012Z-13R

型号:

ZXTP2012Z-13R

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

7 页

PDF大小:

237 K

A Product Line of  
Diodes Incorporated  
Green  
ZXTP2012Z  
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89  
Features  
Mechanical Data  
Case: SOT89  
BVCEO > -60V  
IC = -4.3A high continuous current  
Case material: molded plastic. “Green” molding compound.  
UL Flammability Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish - Matte Tin Plated Leads, Solderable per  
MIL-STD-202, Method 208  
Weight: 0.05 grams (Approximate)  
RSAT = 32mfor a low equivalent On-Resistance  
Low saturation voltage VCE(sat) < -65mV @ IC = -1A  
hFE specified up to -10A for high current gain hold up  
Complementary NPN type: ZXTN2010Z  
Lead-Free Finish; RoHS compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP capable (Note 4)  
Application  
Emergency lighting circuits  
Motor driving (including DC fans)  
Backlight inverters  
Power switches  
Gate driving MOSFETs and IGBTs  
SOT89  
C
E
B
C
B
C
E
Top View  
Top View  
Pin Out  
Device Symbol  
Ordering Information (Note 4 & 5)  
Product  
Compliance  
AEC-Q101  
AEC-Q101  
Automotive  
Marking  
951  
951  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
1,000  
ZXTP2012ZTA  
ZXTP2012Z-13R  
ZXTP2012ZQTA  
7
13  
7
12  
12  
12  
4,000  
1,000  
951  
Notes:  
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.  
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally  
the same, except where specified.  
5. For packaging details, go to our website at http://www.diodes.com  
Marking Information  
951  
951 = Product Type Marking Code  
ZXTP2012Z  
Datasheet Number: DS33713 Rev. 3 - 2  
1 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTP2012Z  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-100  
-60  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-7  
V
Continuous Collector Current  
Peak Pulse Current  
-4.3  
-15  
A
A
ICM  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
Unit  
PD  
Power Dissipation (Note 6)  
Linear derating factor  
1.5  
12  
W
mW/°C  
Power Dissipation (Note 7)  
Linear derating factor  
2.1  
16.8  
W
mW/°C  
PD  
Thermal Resistance, Junction to Ambient (Note 6)  
Thermal Resistance, Junction to Ambient (Note 7)  
Thermal Resistance, Junction to Leads (Note 8)  
Operating and Storage Temperature Range  
83  
60  
RθJA  
RθJA  
°C/W  
°C/W  
°C/W  
°C  
3.23  
RθJL  
-55 to +150  
TJ,TSTG  
Notes:  
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; device  
measured when operating in steady state condition.  
7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 1oz weight copper.  
8. Thermal resistance from junction to solder-point (on the exposed collector pad).  
ZXTP2012Z  
Datasheet Number: DS33713 Rev. 3 - 2  
2 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTP2012Z  
Thermal Characteristics and Derating Information  
VCE(sat)  
2.0  
1.5  
1.0  
0.5  
0.0  
10  
Limit  
50X50m m PCB  
1oz copper  
DC  
1
100m  
10m  
1s  
100ms  
25X25m m PCB  
1oz copper  
10ms  
1ms  
Single Pulse. T  
=25°C  
amb  
100µs  
25X25mm PCB 1oz copper  
100m  
1
10  
100  
0
20 40 60 80 100 120 140 160  
-VCE Collector-Emitter Voltage (V)  
Temperature (°C)  
Safe Operating Area  
Derating Curve  
80  
60  
40  
20  
0
25X25m m PCB 1oz copper)  
Single Pulse. T  
=25°C  
25X25mm PCB 1oz copper  
amb  
100  
10  
1
D=0.5  
Single Pulse  
D=0.2  
D=0.05  
D=0.1  
100µ 1m 10m 100m  
1
10  
100  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Power Dissipation  
ZXTP2012Z  
Datasheet Number: DS33713 Rev. 3 - 2  
3 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTP2012Z  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Collector-Base Breakdown Voltage  
Symbol  
BVCBO  
BVCER  
BVCEO  
BVEBO  
Min  
-100  
-100  
-60  
Typ  
-120  
-120  
-80  
Max  
Unit  
V
Test Condition  
-
-
-
-
IC = -100µA  
Collector-Emitter Breakdown Voltage (Notes 9)  
Collector-Emitter Breakdown Voltage (Notes 9)  
Emitter-Base Breakdown Voltage  
V
IC = -1µA, RB 1kΩ  
IC = -10mA  
V
-7  
-8.1  
V
IE = -100µA  
V
CB = -80V  
-20  
-500  
nA  
nA  
< -1  
< -1  
< -1  
Collector Cutoff Current  
-
ICBO  
VCB = -80V, TA = +100°C  
V
V
CB = -80V  
CB = -80V, TA = +100°C  
-20  
-500  
nA  
nA  
ICER  
R 1kΩ  
Collector Cutoff Current  
Emitter Cutoff Current  
-
-
-10  
nA  
IEBO  
VEB = -6V  
C = -10mA, VCE = -1V  
IC = -2A, VCE = -1V  
C = -5A, VCE = -1V  
IC = -10A, VCE = -1V  
I
100  
100  
45  
250  
200  
90  
300  
DC current transfer Static ratio (Notes 9)  
hFE  
I
10  
25  
I
I
I
C = -100mA, IB = -10mA  
C = -1A, IB = -100mA  
C = -2A, IB = -200mA  
-14  
-50  
-75  
-20  
-65  
-110  
-215  
-
Collector-Emitter Saturation Voltage (Notes 9)  
mV  
VCE(sat)  
-160  
IC = -5A, IB = -500mA  
IC = -5A, IB = -500mA  
IC = -5A, VCE = -1V  
Base-Emitter Saturation Voltage (Notes 9)  
Base-Emitter Turn-on Voltage (Notes 9)  
-
-
-950  
-840  
-1050  
-950  
mV  
mV  
VBE(sat)  
VBE(on)  
IC = -100mA, VCE = -10V,  
f = 50MHz  
Transitional Frequency (Notes 9)  
Output capacitance  
-
-
-
120  
-
-
-
MHz  
pF  
fT  
48  
39  
Cobo  
tON  
VCB = -10V, f = 1MHz,  
VCC = -10V, IC = -1A,  
IB1 = IB2 = -100mA  
Switching Time  
ns  
370  
tOFF  
Notes:  
9. Measured under pulsed conditions. Pulse width 300μs. Duty cycle 2%.  
ZXTP2012Z  
Datasheet Number: DS33713 Rev. 3 - 2  
4 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTP2012Z  
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
1
100m  
10m  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Tamb=25°C  
IC/IB=10  
IC/IB=50  
IC/IB=20  
100°C  
25°C  
IC/IB=10  
-55°C  
10  
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
- IC Collector Current (A)  
- IC Collector Current (A)  
VCE(SAT) v IC  
VCE(SAT) v IC  
300  
250  
200  
150  
100  
50  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VCE=1V  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
IC/IB=10  
100°C  
-55°C  
25°C  
25°C  
-55°C  
100°C  
1
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
10  
- IC Collector Current (A)  
- IC Collector Current (A)  
hFE v IC  
VBE(SAT) v IC  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VCE=1V  
-55°C  
25°C  
100°C  
1m  
10m  
100m  
1
10  
- IC Collector Current (A)  
VBE(ON) v IC  
ZXTP2012Z  
Datasheet Number: DS33713 Rev. 3 - 2  
5 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTP2012Z  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.  
D1  
C
SOT89  
Dim  
A
B
B1  
C
D
Min  
1.40  
0.44  
0.35  
0.35  
4.40  
1.62  
2.29  
Max  
1.60  
0.62  
0.54  
0.44  
4.60  
1.83  
2.60  
H1  
H
E
B1  
L
B
D1  
E
e
e
1.50 Typ  
8° (4X)  
H
H1  
L
3.94  
2.63  
0.89  
4.25  
2.93  
1.20  
A
All Dimensions in mm  
D
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
X1  
Dimensions Value (in mm)  
X
0.900  
1.733  
0.416  
1.300  
4.600  
1.475  
0.950  
1.125  
1.500  
X1  
X2  
Y
Y1  
Y2  
Y3  
Y4  
C
X2 (2x)  
Y1  
Y3  
Y
Y4  
Y2  
C
X (3x)  
ZXTP2012Z  
Datasheet Number: DS33713 Rev. 3 - 2  
6 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTP2012Z  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2012, Diodes Incorporated  
www.diodes.com  
ZXTP2012Z  
Datasheet Number: DS33713 Rev. 3 - 2  
7 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
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