IXFC 10N80P
ISOPLUS220TM (IXFC) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = IT, pulse test
6
9
S
Ciss
Coss
Crss
2050
172
16
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
21
22
62
22
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 10 Ω (External)
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
Qg(on)
Qgs
40
12
14
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
RthJC
RthCS
1.25 °C/W
°C/W
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
Ref: IXYS CO 0177 R0
VGS = 0 V
Repetitive
10
A
A
V
ISM
30
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr
IRM
IF = 10 A, -di/dt = 100 A/μs
VR = 100 V, VGS = 0 V
250
ns
A
5
QRM
0.6
μC
Note 1: Test Current IT = 5 A
ADVANCE TECHNICAL INFORMATION
Theproductpresentedhereinisunderdevelopment. TheTechnicalSpecificationsofferedare
derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated objective result. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2
7,063,975 B2
6,771,478 B2 7,071,537
