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UZVP2120A

型号：

UZVP2120A

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

3 页

PDF大小：

84 K

下载PDF手册
P-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ISSUE 2 – MARCH 94  
ZVP2120A  
FEATURES  
*
*
200 Volt VDS  
RDS(on)=25Ω  
D
G
S
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDS  
VALUE  
UNIT  
V
Drain-Source Voltage  
-200  
-120  
Continuous Drain Current at Tamb=25°C  
Pulsed Drain Current  
ID  
mA  
A
IDM  
-1.2  
Gate Source Voltage  
VGS  
V
± 20  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
700  
mW  
°C  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
SYMBOL MIN. MAX. UNIT CONDITIONS.  
PARAMETER  
Drain-Source Breakdown  
Voltage  
BVDSS  
-200  
V
ID=-1mA, VGS=0V  
ID=-1mA, VDS= VGS  
VGS=± 20V, VDS=0V  
Gate-Source Threshold  
Voltage  
VGS(th)  
-1.5  
-3.5  
20  
V
Gate-Body Leakage  
IGSS  
IDSS  
nA  
Zero Gate Voltage Drain  
Current  
-10  
-100  
VDS=-200 V, VGS=0  
VDS=-160 V, VGS=0V,  
T=125°C(2)  
µA  
µA  
On-State Drain Current(1)  
ID(on)  
-300  
50  
mA  
VDS=-25 V, VGS=-10V  
VGS=-10V,ID=-150mA  
Static Drain-Source  
On-State Resistance (1)  
RDS(on)  
25  
Ω
Forward Transconductance  
(1)(2)  
gfs  
mS  
VDS=-25V,ID=-150mA  
Input Capacitance (2)  
Ciss  
100  
25  
pF  
pF  
Common Source Output  
Capacitance (2)  
Coss  
VDS=-25V, VGS=0V, f=1MHz  
Reverse Transfer  
Capacitance (2)  
Crss  
7
pF  
Turn-On Delay Time (2)(3)  
Rise Time (2)(3)  
td(on)  
tr  
td(off)  
tf  
7
ns  
ns  
ns  
ns  
15  
12  
15  
VDD≈-25V, ID=-150mA  
Turn-Off Delay Time (2)(3)  
Fall Time (2)(3)  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%  
(2) Sample test.  
3-425  
(
3
ZVP2120A  
TYPICAL CHARACTERISTICS  
VGS=  
-10V  
VGS=  
-0.4  
-10V  
-8V  
-7V  
-6V  
-8V  
-0.6  
-7V  
-0.3  
-6V  
-5V  
-0.4  
-0.2  
-4.5V  
-4V  
-5V  
-0.2  
0
-0.1  
-4.5V  
-4V  
-3.5V  
-3.5V  
-100  
0
0
-20  
-40  
-60  
-80  
0
-2  
-4  
-6  
-8  
-10  
VDS - Drain Source Voltage (Volts)  
VDS - Drain Source Voltage (Volts)  
Output Characteristics  
Saturation Characteristics  
VDS=  
-25V  
-20  
-18  
-16  
-14  
-12  
-10  
-8  
-0.6  
-0.4  
-10V  
ID=  
-300mA  
-6  
-0.2  
0
-4  
-200mA  
-2  
-100mA  
-50mA  
0
0
-2  
-4  
-6  
-8  
-10  
0
-2  
-4  
-6  
-8  
-10  
VGS-Gate Source Voltage (Volts)  
VGS-Gate Source Voltage (Volts)  
Transfer Characteristics  
Voltage Saturation Characteristics  
100  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
R
VGS=-10V  
ID=-0.1A  
50  
e
c
n
ta  
s
i
s
e
e R  
ID=  
rc  
u
-300mA  
-200mA  
-I00mA  
-50mA  
o
S
-
n
Drai  
VGS=VDS  
ID=-1mA  
10  
-40  
120  
180  
140 160  
-20  
0
20 40 60 80 100  
-1  
-10  
-20  
VGS-Gate Source Voltage (Volts)  
T-Temperature (°C)  
Normalised RDS(on) and VGS(th) vs Temperature  
On-resistance vs gate-source voltage  
3-426  
ZVP2120A  
TYPICAL CHARACTERISTICS  
200  
180  
160  
200  
180  
VDS=-25V  
160  
140  
120  
140  
120  
VDS=-25V  
100  
100  
80  
60  
40  
20  
80  
60  
40  
20  
0
0
0
-0.2  
-0.4  
-0.6  
-0.8  
0
-2  
-4  
-6  
-8  
-10  
VGS-Gate Source Voltage (Volts)  
ID- Drain Current (Amps)  
Transconductance v drain current  
Transconductance v gate-source voltage  
0
ID=- 0.4A  
100  
-2  
VDS=  
-50V  
-4  
-6  
80  
60  
40  
20  
-100V  
-180V  
Ciss  
-8  
-10  
-12  
-14  
-16  
Coss  
Crss  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
Q-Charge (nC)  
0
-10  
-20  
-30  
-40  
-50  
VDS-Drain Source Voltage (Volts)  
Capacitance v drain-source voltage  
Gate charge v gate-source voltage  
3-427  
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