请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

4N28X001

型号：

4N28X001

品牌：

VISHAY[ VISHAY ]

页数：

6 页

PDF大小：

298 K

下载PDF手册
PHOTOTRANSISTOR  
Industry Standard  
Single Channel  
6 Pin DIP Optocoupler  
DEVICE TYPES  
Dimensions in Inches (mm)  
Part No.  
4N25  
CTR % Min.  
20  
Part No.  
MCT2  
MCT2E  
CTR % Min.  
20  
20  
pin one ID  
Anode  
2
1
3
4N26  
20  
6
5
4
Base  
1
2
3
.248 (6.30)  
.256 (6.50)  
4N27  
4N28  
4N35  
4N36  
4N37  
4N38  
H11A1  
H11A2  
H11A3  
H11A4  
H11A5  
10  
10  
100  
100  
100  
10  
50  
20  
20  
10  
MCT270  
MCT271  
MCT272  
MCT273  
MCT274  
MCT275  
MCT276  
MCT277  
50  
45–90  
75–150  
125–250  
225–400  
70–90  
15–60  
100  
Cathode  
NC  
Collector  
Emitter  
4
5
6
.335 (8.50)  
.343 (8.70)  
.300 (7.62)  
typ.  
.048 (0.45)  
.022 (0.55)  
.039  
(1.00)  
Min.  
.130 (3.30)  
.150 (3.81)  
18°  
4°  
.114 (2.90)  
.130 (3.0)  
typ.  
.031 (0.80) min.  
3°–9°  
30  
.010 (.25)  
typ.  
.300–.347  
.031 (0.80)  
.035 (0.90)  
.018 (0.45)  
.022 (0.55)  
FEATURES  
.100 (2.54) typ.  
(7.62–8.81)  
• Interfaces with Common Logic Families  
• Input-output Coupling Capacitance < 0.5 pF  
• Industry Standard Dual-in-line 6-pin Package  
• Field Effect Stable by TRIOS  
• 5300 V  
DESCRIPTION  
®
This data sheet presents five families of Infineon Industry Standard  
Single Channel Phototransistor Couplers. These families include the  
4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/  
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/  
277 devices.Each optocoupler consists of Gallium Arsenide infra-  
red LED and a silicon NPN phototransistor.  
Isolation Test Voltage  
RMS  
• Underwriters Laboratory File #E52744  
VE  
D
•
VDE #0884 Approval Available with Option 1  
APPLICATIONS  
• AC Mains Detection  
• Reed Relay Driving  
• Switch Mode Power Supply Feedback  
• Telephone Ring Detection  
• Logic Ground Isolation  
• Logic Coupling with High Frequency Noise  
Rejection  
These couplers are Underwriters Laboratories (UL) listed to comply  
with a 5300 V  
Isolation Test Voltage. This isolation performance  
RMS  
is accomplished through Infineon double molding isolation manu-  
facturing process. Compliance to VDE 0884 partial discharge isola-  
tion specification is available for these families by ordering option 1.  
Phototransistor gain stability, in the presence of high isolation volt-  
ages, is insured by incorporating a TRansparent lOn Shield  
®
(TRIOS) on the phototransistor substrate. These isolation pro-  
Notes:  
cesses and the Infineon IS09001 Quality program results in the  
highest isolation performance available for a commercial plastic  
phototransistor optocoupler.  
Designing with data sheet is covered in Application Note 45.  
The devices are available in lead formed configuration suitable for  
surface mounting and are available either on tape and reel, or in  
standard tube shipping containers.  
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA  
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)  
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany  
www.osram-os.com • +49-941-202-7178  
1
March 27, 2000-00  
Maximum Ratings T =25°C  
A
Emitter  
Reverse Voltage .......................................................................................... 6.0 V  
Forward Current ........................................................................................ 60 mA  
Surge Current (t≤10 µs)............................................................................... 2.5 A  
Power Dissipation................................................................................... 100 mW  
Detector  
Collector-Emitter Breakdown Voltage........................................................... 70 V  
Emitter-Base Breakdown Voltage................................................................ 7.0 V  
Collector Current ....................................................................................... 50 mA  
Collector Current(t <1.0 ms).................................................................... 100 mA  
Power Dissipation................................................................................... 150 mW  
Package  
Isolation Test Voltage.......................................................................... 5300 V  
RMS  
Creepage .............................................................................................. ≥7.0 mm  
Clearance ............................................................................................. ≥7.0 mm  
Isolation Thickness between Emitter and Detector............................... ≥0.4 mm  
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175  
Isolation Resistance  
12  
V =500 V, T =25°C...............................................................................10  
Ω
Ω
IO  
A
11  
V =500 V, T =100°C............................................................................ 10  
IO  
A
Storage Temperature................................................................ –55°C to +150°C  
Operating Temperature ............................................................ –55°C to +100°C  
Junction Temperature................................................................................ 100°C  
Soldering Temperature (max. 10 s, dip soldering:  
distance to seating plane ≥1.5 mm) ...................................................... 260°C  
4N25/26/27/28—Characteristics T =25°C  
A
Emitter  
Symbol  
Min.  
—
Typ.  
1.3  
0.1  
25  
Max.  
1.5  
Unit  
V
Condition  
Forward Voltage*  
Reverse Current*  
Capacitance  
Detector  
I =50 mA  
V
F
F
—
100  
—
µA  
pF  
V =3.0 V  
I
R
R
—
V =0  
C
R
O
Breakdown Voltage*  
Collector-Emitter  
BV  
BV  
BV  
—
30  
7.0  
70  
—
—
—
—
—
—
—
V
I =1.0 mA  
C
CEO  
ECO  
CBO  
Emitter-Collector  
Collector-Base  
I =100 µA  
E
I =100 µA  
C
I
(dark)*  
(dark)*  
4N25/26/27  
4N28  
5.0  
10  
50  
100  
nA  
V
=10 V, (base open)  
CEO  
CE  
I
—
—
—
2.0  
6.0  
20  
nA  
pF  
V
V
=10 V, (emitter open)  
=0  
CBO  
CB  
Capacitance, Collector-Emitter  
Package  
—
C
CE  
CE  
DC Current Transfer Ratio*  
4N25/26  
4N27/28  
4N25  
CTR  
20  
50  
30  
—
—
—
—
—
—
0.5  
—
—
—
%
V
V
=10 V, I =10 mA  
CE F  
10  
Isolation Voltage*  
2500  
1500  
500  
—
Peak, 60 Hz  
V
IO  
4N26/27  
4N28  
—
—
Saturation Voltage, Collector-Emitter  
Resistance, Input to Output*  
Coupling Capacitance  
—
V
I
=2.0 mA, I =50 mA  
CE F  
V
R
CE(sat)  
IO  
100  
—
—
GΩ  
pF  
µs  
V =500 V  
IO  
0.5  
2.0  
f=1.0 MHz  
C
IO  
Rise and Fall Times  
t , t  
—
I =10 mA  
r
f
F
V
=10 V, R =100 Ω  
L
CE  
* Indicates JEDEC registered values  
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA  
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)  
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany  
www.osram-os.com • +49-941-202-7178  
Phototransistor, Industry Standard  
March 27, 2000-00  
2
4N35/36/37/38—Characteristics T =25°C  
A
Emitter  
Symbol  
Min. Typ. Max. Unit  
Condition  
I =10 mA  
Forward Voltage*  
V
1.3  
1.5  
1.7  
V
F
F
0.9  
I =10 mA, T =–55°C  
F A  
Reverse Current*  
Capacitance  
Detector  
I
0.1  
25  
10  
µA  
V =6.0 V  
R
R
C
—
pF  
V =0, f=1.0 MHz  
R
O
Breakdown Voltage, Collector-Emitter*  
4N35/36/37  
BV  
30  
80  
7.0  
70  
80  
—
—
—
—
—
—
—
—
—
—
—
50  
50  
500  
—
—
V
I =1.0 mA  
C
CEO  
4N38  
—
Breakdown Voltage, Emitter-Collector*  
Breakdown Voltage, Collector-Base*  
BV  
BV  
—
V
I =100 µA  
E
ECO  
CBO  
4N35/36/37  
4N38  
—
V
I =100 µA, I =1.0 µA  
C B  
—
—
nA  
Leakage Current, Collector-Emitter*  
Leakage Current, Collector-Emitter*  
4N35/36/37  
4N38  
I
I
5.0  
—
V
=10 V, I =0  
F
CEO  
CE  
CE  
CE  
CE  
CE  
V
V
V
V
=60 V, I =0  
F
4N35/36/37  
4N38  
—
µA  
pF  
%
=30 V, I =0, T =100°C  
F A  
CEO  
6.0  
6.0  
=60 V, I =0, T =100°C  
F A  
Capacitance, Collector-Emitter  
Package  
C
=0  
CE  
DC Current Transfer Ratio*  
4N35/36/37  
4N38  
CTR  
100  
20  
40  
—
—
—
—
—
—
—
—
—
V
V
V
=10 V, I =10 mA,  
F
CE  
CE  
CE  
—
=1.0 V, I =20 mA  
F
DC Current Transfer Ratio*  
4N35/36/37  
4N38  
CTR  
50  
30  
—
%
=10 V, IF=10 mA,  
T =–55 to 100°C  
A
—
—
Ω
11  
Resistance, Input to Output*  
Coupling Capacitance  
R
10  
—
—
V =500 V  
IO  
IO  
C
0.5  
10  
pF  
µs  
f=1.0 MHz  
IO  
Switching Time*  
tON, tOFF  
I =2.0 mA, R =100 Ω, V =10 V  
C
L
CC  
* Indicates JEDEC registered value  
H11A1 through H11A5—Characteristics T =25°C  
A
Emitter  
Symbol  
Min. Typ. Max. Unit  
Condition  
Forward Voltage  
H11A1–H11A4  
V
—
—
—
—
1.1  
1.1  
—
1.5  
1.7  
10  
—
V
IF=10 mA  
F
H11A5  
Reverse Current  
I
µA  
VR=3.0 V  
R
Capacitance  
C
50  
pF  
VR=0, f=1.0 MHz  
0
Detector  
Breakdown Voltage, Collector-Emitter  
Breakdown Voltage, Emitter-Collector  
Breakdown Voltage, Collector-Base  
Leakage Current, Collector-Emitter  
Capacitance, Collector-Emitter  
Package  
BV  
BV  
BV  
30  
7.0  
70  
—
—
—
—
—
50  
—
V
IC=1.0 mA, I =0 mA  
F
CEO  
ECO  
CBO  
—
V
I =100 µA, I =0 mA  
E
F
—
V
IC=10 µA, I =0 mA  
F
I
5.0  
6.0  
nA  
pF  
VCE=10 V, I =0 mA  
CEO  
F
C
—
VCE=0  
CE  
DC Current Transfer Ratio  
H11A1  
H11A2/3  
H11A4  
H11A5  
CTR  
50  
20  
10  
30  
—
—
—
—
—
—
—
—
0.4  
—
—
%
VCE=10 V, IF=10 mA  
—
—
—
Saturation Voltage, Collector-Emitter  
Capacitance, Input to Output  
Switching Time  
V
—
V
I
=0.5 mA, IF=10 mA  
CE  
CE  
sat  
C
0.5  
3.0  
pF  
µs  
—
IO  
tON, tOFF  
IC=2.0 mA, R =100 Ω, V =10 V  
L CE  
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA  
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)  
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany  
www.osram-os.com • +49-941-202-7178  
Phototransistor, Industry Standard  
March 27, 2000-00  
3
MCT2/MCT2E—Characteristics T =25°C  
A
Emitter  
Symbol Min. Typ. Max. Unit  
Condition  
Forward Voltage  
Reverse Current  
Capacitance  
Detector  
V
—
—
—
1.1  
—
1.5  
10  
—
V
IF=20 mA  
F
I
µA  
pF  
V =3.0 V  
R
R
C
25  
V =0, f=1.0 MHz  
O
R
Breakdown Voltage  
Collector-Emitter BV  
Emitter-Collector BV  
30  
7.0  
70  
—
—
—
—
5.0  
—
10  
—
—
—
50  
20  
—
V
IC=1.0 mA, IF=0 mA  
CEO  
ECO  
CBO  
I =100 µA, IF=0 mA  
E
Collector-Base  
Collector-Emitter  
Collector-Base  
—
BV  
IC=10 µA, IF=0 mA  
Leakage Current  
I
I
nA  
—
V
=10 V, IF=0  
CE  
CBO  
CBO  
—
Capacitance, Collector-Emitter  
Package  
C
—
pF  
VCE=0  
CE  
DC Current Transfer Ratio  
Capacitance, Input to Output  
Resistance, Input to Output  
Switching Time  
CTR  
20  
—
—
—
60  
—
—
—
—
%
VCE=10 V, IF=10 mA  
0.5  
100  
3.0  
pF  
GΩ  
µs  
—
—
C
IO  
R
IO  
tON, tOFF  
IC=2.0 mA, R =100 Ω, V =10 V  
L
CE  
MCT270 through MCT277—Characteristics T =25°C  
A
Emitter  
Symbol Min. Typ. Max. Unit  
Condition  
IF=20 mA  
VR=3.0 V  
Forward Voltage  
Reverse Current  
Capacitance  
Detector  
V
I
1.5  
10  
—
V
—
—
—
—
—
25  
F
µA  
pF  
R
C
VR=0, f=1.0 MHz  
O
Breakdown Voltage  
Collector-Emitter BV  
Emitter-Collector BV  
30  
7.0  
70  
—
V
I =10 µA, IF=0 mA  
—
—
—
—
—
—
—
50  
CEO  
ECO  
CBO  
C
I =10 µA, IF=0 mA  
E
Collector-Base  
BV  
IC=10 µA, IF=0 mA  
VCE=10 V, IF=0 mA  
—
Leakage Current, Collector-Emitter  
Package  
I
nA  
CEO  
DC Current Transfer Ratio  
MCT270  
MCT271  
MCT272  
MCT273  
MCT274  
MCT275  
MCT276  
MCT277  
MCT271–276  
MCT277  
CTR  
50  
45  
75  
125  
225  
70  
15  
100  
12.5  
40  
—
—
—
—
—
—
—
—
—
—
—
—
0.5  
—
%
VCE=10 V, IF=10 mA  
90  
150  
250  
400  
210  
60  
—
Current Transfer Ratio, Collector–Emitter  
CTR  
—
%
—
V
VCE=0.4 V, IF=16 mA  
CE  
—
Collector–Emitter Saturation Voltage  
Capacitance, Input to Output  
Resistance, Input to Output  
Switching Time  
0.4  
—
V
ICE=2.0 mA, IF=16 mA  
—
CE  
sat  
C
R
—
pF  
Ω
IO  
12  
—
10  
—
—
—
—
—
—
—
VIO=500 VDC  
IO  
MCT270/272  
MCT271  
—
10  
tON, tOFF  
µs  
I =2.0 mA,  
C
R =100 Ω,  
L
—
7.0  
20  
V
CE=5.0 V  
MCT273  
—
MCT274  
—
25  
MCT275/277  
MCT276  
—
15  
—
3.5  
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA  
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)  
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany  
www.osram-os.com • +49-941-202-7178  
Phototransistor, Industry Standard  
March 27, 2000-00  
4
Figure 9. Forward Voltage vs. Forward Current  
Figure 12. Normalized Non-saturated and Saturated  
CTR, T =70°C vs. LED Current  
A
1.4  
1.3  
1.5  
Normalized to:  
Vce=10 V, I =10 mA, T =25°C  
F
A
T
= –55°C  
= 25°C  
A
CTRce(sat) Vce=0.4 V  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
1.0  
0.5  
0.0  
T
A
T =70°C  
A
T
= 85°C  
A
NCTR(SAT)  
NCTR  
.1  
1
10  
100  
.1  
1
10  
100  
I
- LED Current - mA  
I
- Forward Current - mA  
F
F
Figure 10. Normalized Non-saturated and Saturated  
Figure 13. Normalized Non-saturated and Saturated  
CTR, T =25°C vs. LED Current  
CTR, T =85°C vs. LED Current  
A
A
1.5  
1.5  
Normalized to:  
Normalized to:  
Vce=10 V, I =10 mA, T =25°C  
CTRce(sat) Vce=0.4 V  
F
A
Vce=10 V, I =10 mA, T =25°C  
F
A
CTRce(sat) Vce = 0.4 V  
1.0  
0.5  
0.0  
1.0  
0.5  
0.0  
T =25°C  
A
T =85°C  
A
NCTR(SAT)  
NCTR  
NCTR(SAT)  
NCTR  
.1  
1
10  
100  
0
1
10  
100  
I
- LED Current - mA  
F
I
- LED Current - mA  
F
Figure 11. Normalized Non-saturated and Saturated  
Figure 14. Collector-emitter Current vs. Temperature  
and LED Current  
CTR, T =50°C vs. LED Current  
A
35  
30  
1.5  
Normalized to:  
Vce=10 V, I =10 mA, T =25°C  
F
A
CTRce(sat) Vce=0.4 V  
25  
50°C  
1.0  
0.5  
0.0  
20  
T =50°C  
A
70°C  
15  
25°C  
85°C  
10  
5
NCTR(SAT)  
NCTR  
0
0
10  
20  
30  
40  
50  
60  
.1  
1
10  
100  
I
- LED Current - mA  
I
- LED Current - mA  
F
F
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA  
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)  
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany  
www.osram-os.com • +49-941-202-7178  
Phototransistor, Industry Standard  
March 27, 2000-00  
5
Figure 15. Collector-emitter Leakage Current vs.Temp.  
Figure 18. Normalized Non-saturated HFE vs. Base  
Current and Temperature  
5
10  
1.2  
4
70°C  
10  
50°C  
3
10  
1.0  
25°C  
2
10  
–20°C  
1
0
V
= 10 V  
ce  
0.8  
10  
10  
10  
10  
Typical  
Normalized to:  
Ib=20 µA, Vce=10 V, T =25°C  
A
0.6  
0.4  
–1  
–2  
–20  
0
20  
40  
60  
80  
100  
1
10  
100  
1000  
Ib - Base Current - µA  
T
- Ambient Temperature - °C  
A
Figure 19. Normalized HFE vs. Base Current and Temp.  
Figure 16. Normalized CTRcb vs. LED Current and Temp.  
1.5  
1.5  
Normalized to:  
Vce=10 V, Ib=20 µA  
Normalized to:  
Vcb=9.3 V, I =10 mA, T =25°C  
F
A
50°C  
T =25°C  
A
70°C  
1.0  
1.0  
0.5  
0.0  
25°C  
–20°C  
0.5  
0.0  
25°C  
50°C  
70°C  
Vce=0.4 V  
1
10  
100  
1000  
.1  
1
10  
100  
Ib - Base Current - µA  
I
- LED Current - mA  
F
Figure 20. Propagation Delay vs. Collector Load Resistor  
Figure 17. Normalized Photocurrent vs. I and Temp.  
F
10  
1000  
100  
10  
2.5  
I =10 mA, T =25°C  
Normalized to:  
F
A
V =5.0 V, Vth=1.5 V  
CC  
I =10 mA, T =25°C  
F
A
t
PHL  
2.0  
1
0.1  
1.5  
1.0  
Nib, T =–20°C  
A
t
PLH  
Nib, T =25°C  
A
Nib, T = 50°C  
A
Nib, T =70°C  
A
0.01  
1
.1  
1
10  
100  
.1  
1
10  
100  
I
- LED Current - mA  
RL - Collector Load Resistor - kΩ  
F
Figure 22. Switching Schematic  
Figure 21. Switching Timing  
IF  
V
= 5.0 V  
CC  
F=10 KHz,  
DF=50%  
R
L
tD  
tR  
V
VO  
O
tPLH  
I =10 mA  
F
=1.5 V  
VTH  
tF  
tS  
tPHL  
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA  
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)  
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany  
www.osram-os.com • +49-941-202-7178  
Phototransistor, Industry Standard  
March 27, 2000-00  
6
厂商 型号 描述 页数 下载

APITECH

 		4N200W-03F [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-10 [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-20 [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-30 [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-30F [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-30M [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-40 [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-40F [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-40M [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

MII

 		4N22 JAN ， JANTX ， JANTXV ，单通道光耦合器[ JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS ] 4 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.202196s