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IXBX64N250

型号：

IXBX64N250

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

192 K

下载PDF手册
High Voltage, High Gain  
BiMOSFETTM  
VCES = 2500V  
IC110 = 64A  
VCE(sat) ≤ 3.0V  
IXBK64N250  
IXBX64N250  
Monolithic Bipolar  
MOS Transistor  
TO-264 (IXBK)  
G
C
E
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
2500  
2500  
±25  
V
V
V
V
Tab  
VCGR  
PLUS247TM (IXBX)  
VGES  
VGEM  
Transient  
±35  
IC25  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
TC = 110°C  
156  
120  
64  
A
A
A
A
ILRMS  
IC100  
ICM  
G
C
E
Tab  
TC = 25°C, 1ms  
600  
SSOA  
VGE= 15V, TVJ = 125°C, RG = 1Ω  
ICM = 160  
A
G = Gate  
E = Emitter  
C
= Collector  
(RBSOA)  
Clamped Inductive Load  
VCE < 0.8 • VCES  
Tab = Collector  
TSC  
VGE = 15V, TJ = 125°C,  
(SCSOA)  
RG = 5Ω, VCE = 1250V, Non-Repetitive  
10  
μs  
PC  
TC = 25°C  
735  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z High Blocking Voltage  
z Low Switching Losses  
z High Current Handling Capability  
z Anti-Parallel Diode  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264 )  
Mounting Force (PLUS247 )  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
Advantages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
2500  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
IC = 1mA, VGE = 0V  
IC = 4mA, VCE = VGE  
V
V
z Switch-Mode and Resonant-Mode  
Power Supplies  
z Uninterrupted Power Supplies (UPS)  
z Capacitor Discharge Circuits  
z Laser Generators  
5.0  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
50 μA  
TJ = 125°C  
6 mA  
IGES  
VCE = 0V, VGE = ± 25V  
±200 nA  
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.5  
3.1  
3.0  
V
V
TJ = 125°C  
DS99832B(08/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXBK64N250  
IXBX64N250  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 Outline  
Min.  
Typ.  
Max.  
gfS  
IC = IC110, VCE = 10V, Note 1  
40  
72  
S
Cies  
Coes  
Cres  
8900  
345  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
118  
Qg  
400  
46  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC110, VGE = 15V, VCE = 600V  
Terminals: 1 - Gate  
2 - Collector  
155  
3 - Emitter  
4 - Collector  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
49  
318  
232  
170  
ns  
ns  
ns  
ns  
Millimeter  
Inches  
Resistive Switching Times, TJ = 25°C  
Dim.  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
IC = 128A, VGE = 15V, tp = 1μs  
VCE = 1250V, RG = 1Ω  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
54  
578  
222  
175  
ns  
ns  
ns  
ns  
c
D
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
Resistive Switching Times, TJ = 125°C  
IC = 128A, VGE = 15V, tp = 1μs  
VCE = 1250V, RG = 1Ω  
25.91 26.16  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
RthJC  
RthCS  
0.17 °C/W  
°C/W  
P
Q
Q1  
3.17  
3.66  
.125  
.144  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
0.15  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
PLUS247TM Outline  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max  
VF  
trr  
IF = IC110, VGE = 0V, Note 1  
3.0  
V
160  
480  
ns  
IF = IC110, VGE = 0V, -diF/dt = 650A/μs  
VR = 600V, VGE = 0V  
IRM  
A
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Additional provisions for lead-to-lead isolation are required at VCE >1200V.  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBK64N250  
IXBX64N250  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Output Characteristics @ TJ = 125ºC  
270  
240  
210  
180  
150  
120  
90  
VGE = 25V  
VGE = 25V  
300  
250  
200  
150  
100  
50  
20V  
15V  
20V  
15V  
10V  
10V  
60  
30  
5V  
5V  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
150  
125  
VCE - Volts  
VCE - Volts  
Fig. 3. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 4. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
VGE = 15V  
TJ = 25ºC  
I C = 256A  
I C = 256A  
128A  
64A  
I C = 128A  
I C = 64A  
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
-50  
-25  
0
25  
50  
75  
100  
125  
VGE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Breakdown & Threshold Voltages  
vs. Junction Temperature  
Fig. 6. Input Admittance  
120  
100  
80  
60  
40  
20  
0
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
BVCES  
TJ = 125ºC  
25ºC  
- 40ºC  
VGE(  
)
th  
-55  
-35  
-15  
5
25  
45  
65  
85  
105  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
TJ - Degrees Centigrade  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXBK64N250  
IXBX64N250  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
200  
180  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 25ºC  
125ºC  
TJ = 125ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
VF - Volts  
IC - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
16  
14  
12  
10  
8
100,000  
10,000  
1,000  
100  
VCE = 600V  
f = 1 MHz  
I
C = 64A  
C
ies  
I G = 10mA  
C
C
oes  
6
4
res  
2
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Reverse-Bias Safe Operating Area  
1000  
100  
10  
180  
160  
140  
120  
100  
80  
VCE( ) Limit  
sat  
60  
25µs  
TJ = 125ºC  
G = 1Ω  
dv / dt < 10V / ns  
100µs  
40  
TJ = 150ºC  
R
TC = 25ºC  
20  
1ms  
Single Pulse  
0
1
250  
500  
750  
1000  
1250  
1500  
1750  
2000  
2250  
2500  
1
10  
100  
1,000  
10,000  
VCE - Volts  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXBK64N250  
IXBX64N250  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
650  
600  
550  
500  
450  
400  
350  
300  
250  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
R
= 1Ω ,  
V
= 15V  
G
GE  
V
= 1250V  
CE  
TJ = 125ºC  
I C = 256A, 128A, 64A  
R
= 1ꢀ  
V
= 15V  
,
G
GE  
V
= 1250V  
CE  
TJ = 25ºC  
60  
80  
100  
120  
140  
160  
180  
200  
220  
240  
260  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
260  
250  
240  
230  
220  
210  
200  
190  
180  
170  
160  
300  
285  
270  
255  
240  
225  
210  
195  
180  
165  
150  
800  
750  
700  
650  
600  
550  
500  
450  
80  
75  
70  
65  
60  
55  
50  
45  
I C = 64A  
tr  
T
td(on)  
- - - -  
= 125ºC,  
V
= 15V  
J
GE  
tf  
td(off)  
- - - -  
V
= 1250V  
CE  
R
= 1Ω,  
V
= 15V  
G
GE  
= 1250V  
I C = 256A  
V
CE  
I C = 128A  
I C = 128A, 256A  
I C = 64A  
1
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
400  
350  
300  
250  
200  
150  
100  
50  
700  
600  
500  
400  
300  
200  
100  
0
350  
320  
290  
260  
230  
200  
170  
140  
290  
270  
250  
230  
210  
190  
170  
150  
- - - -  
td(off)  
tf  
I C = 64A, 128A, 256A  
R
= 1Ω,  
V
= 15V  
G
GE  
V
= 1250V  
CE  
TJ = 125ºC, 25ºC  
tf  
td(off  
) - - - -  
TJ = 125ºC,  
V
= 15V  
GE  
V
= 1250V  
CE  
60  
80  
100  
120  
140  
160  
180  
200  
220  
240  
260  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXBK64N250  
IXBX64N250  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: B_64N250(9P)8-12-11B  
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