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IXEH40N120B2D4

型号:

IXEH40N120B2D4

品牌:

LITTELFUSE[ LITTELFUSE ]

页数:

2 页

PDF大小:

60 K

Advanced Technical Information  
IXEH 40N120B2D4  
IC25  
VCES  
VCE(sat)typ = 2.4 V  
= 65 A  
= 1200 V  
SPT IGBT  
High Frequency Applications:  
• induction heating  
• flyback converters  
• resonant-mode power supplies  
C
E
TO-247 AD  
G
G
C
E
B)  
Features  
IGBT  
• SPTIGBT  
Symbol  
VCES  
Conditions  
Maximum Ratings  
- low saturation voltage  
- positive temperature coefficient for  
easy paralleling  
TVJ = 25°C to 150°C  
1200  
20  
V
- fast switching  
VGES  
V
- low switching losses  
- short tail current for optimized  
performance in resonant circuits  
• HiPerFREDTM diode  
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
- optimized for resonant flyback  
converters  
• TO-247 package  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
65  
41  
A
A
ICM  
VCEK  
VGE = 15 V; RG = 27 ; TVJ = 125°C  
RBSOA, Clamped inductive load; L = 100 µH  
70  
A
VCES  
tSC  
(SCSOA)  
VCE = 900V; VGE = 15 V; RG = 27 ; TVJ = 125°C  
non-repetitive  
10 µs  
Ptot  
TC = 25°C  
300  
W
- industry standard outline  
- epoxy meets UL 94V-0  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Applications  
min.  
typ. max.  
• induction heating, cookers  
• flyback converters  
• switched-mode and resonant-mode  
power supplies  
VCE(sat)  
IC = 40 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.4  
2.9  
2.7  
V
V
VGE(th)  
ICES  
IC = 1.5 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.2 mA  
mA  
0.2  
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
140  
80  
280  
260  
3.2  
2.9  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 40 A  
VGE = 15 V; RG = 27 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600 V; VGE = 15 V; IC = 35 A  
tbd  
114  
nF  
nC  
RthJC  
0.4 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
1 - 2  
Advanced Technical Information  
IXEH 40N120B2D4  
Diode  
Equivalent Circuits for Simulation  
Conduction  
Symbol  
Conditions  
Maximum Ratings  
IF25  
IF90  
TC = 25°C  
TC = 90°C  
20  
12  
A
A
IGBT (typ. at VGE = 15 V; TJ = 125°C)  
Symbol  
VF  
Conditions  
Characteristic Values  
min. typ. max.  
V0 = 1.30 V; R0 = 40 m  
Diode (typ. at TJ = 125°C)  
IF = 10 A; TVJ = 25°C  
TVJ = 125°C  
2.7  
2.0  
2.9  
V
V
V0 = 1.35V; R0 = 65 mΩ  
Thermal Response  
IRM  
trr  
3
40  
A
ns  
IF = 1 A; diF/dt = -100 A/µs; TVJ = 100°C  
VR = 100 V; VGE = 0 V  
IF = 10 A; diF/dt = -400 A/µs; TVJ = 100°C  
VR = 600 V; VGE = 0 V  
IRM  
trr  
13  
110  
A
ns  
RthJC  
2.5 K/W  
IGBT  
Cth1 = tbd J/K; Rth1 = tbd K/W  
Cth2 = tbd J/K; Rth2 = tbd K/W  
Component  
Symbol  
Conditions  
Maximum Ratings  
Diode  
Cth1 = tbd J/K; Rth1 = tbd K/W  
Cth2 = tbd J/K; Rth2 = tbd K/W  
TVJ  
Tstg  
-55...+150 °C  
-55...+150 °C  
Md  
mounting torque  
Conditions  
0.8...1.2 Nm  
TO-247 AD Outline  
Symbol  
Characteristic Values  
min.  
typ. max.  
RthCH  
with heatsink compound  
0.25  
K/W  
g
Weight  
6
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
2 - 2  
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