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IXFK69N30P

型号：

IXFK69N30P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

603 K

下载PDF手册
PolarHTTMHiPerFET  
Power MOSFET  
IXFH69N30P  
IXFK69N30P  
VDSS  
ID25  
= 300 V  
= 69 A  
RDS(on) = 49 mΩ  
trr  
≤ 200 ns  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 (IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
300  
300  
V
V
VGS  
Continuous  
Transient  
20  
30  
V
V
D (TAB)  
G
VGSM  
D
S
ID25  
IDM  
TC = 25°C  
69  
A
A
TO-264 (IXFK)  
TC = 25°C, pulse width limited by TJM  
200  
IAR  
TC = 25°C  
69  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
50  
mJ  
J
1.5  
D (TAB)  
G
D
S
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC = 25°C  
500  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic diode  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
z
z
z
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-247  
TO-264  
6
10  
g
g
Advantages  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
Easy to mount  
Space savings  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
300  
V
V
z
z
High power density  
2.5  
5.0  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
49 mΩ  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
DS99220(12/04)  
© 2004 IXYS All rights reserved  
IXFH 69N30P  
IXFK 69N30P  
TO-247 AD Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
30  
48  
S
1
2
3
Ciss  
Coss  
Crss  
4960  
760  
pF  
pF  
pF  
190  
td(on)  
tr  
td(off)  
tf  
25  
25  
75  
27  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
RG = 4 Ω (External)  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A12  
4.7  
2.2  
2.2  
1.0  
1.65  
2.87  
5.3  
2.54  
2.6  
1.4  
2.13  
3.12  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
.016 .031  
.819 .845  
.610 .640  
Qg(on)  
Qgs  
156  
32  
180 nC  
nC  
A
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
b
Qgd  
79  
nC  
b
b12  
RthJC  
RthCK  
0.25 K/W  
C
D
E
.4  
.8  
20.80 21.46  
15.75 16.26  
(TO-247)  
(TO-264)  
0.21  
0.15  
K/W  
K/W  
e
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
L
.780 .800  
.177  
L1  
∅P 3.55  
3.65  
.140 .144  
Source-Drain Diode  
Characteristic Values  
Q
5.89  
4.32  
6.40 0.232 0.252  
(TJ = 25°C, unless otherwise specified)  
R
S
5.49  
.170 .216  
242 BSC  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
6.15 BSC  
VGS = 0 V  
69  
A
A
V
TO-264 AA Outline  
ISM  
Repetitive  
200  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A  
-di/dt = 100 A/µs  
VR = 100 V  
100  
500  
200 ns  
nC  
QRM  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
0.53  
25.91  
19.81  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
0.83  
26.16  
19.96  
.190  
.100  
.079  
.044  
.094  
.114  
.021  
1.020  
.780  
.202  
A1  
A2  
.114  
.083  
b
.056  
.106  
.122  
.033  
1.030  
.786  
b1  
b2  
c
D
E
e
5.46BSC  
.215BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
20.32  
20.83  
.800  
.820  
L1  
2.29  
2.59  
.090  
.102  
P
3.17  
3.66  
.125  
.144  
Q
6.07  
6.27  
.239  
.247  
Q1  
8.38  
8.69  
.330  
.342  
R
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
R1  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478 B2  
IXFH 69N30P  
IXFK 69N30P  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
180  
160  
140  
120  
100  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
VGS = 10V  
8V  
7V  
8V  
7V  
6V  
5V  
60  
6V  
5V  
40  
20  
0
0
2
4
6
8
10 12 14 16 18 20  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
70  
60  
50  
40  
30  
20  
10  
0
3
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
VGS = 10V  
VGS = 10V  
8V  
7V  
ID = 69A  
6V  
5V  
ID = 34.5A  
0.8  
0.6  
0.4  
1
2
3
4
5
6
7
8
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID25  
Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.8  
3.4  
3
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
2.6  
2.2  
1.8  
1.4  
1
TJ = 125ºC  
TJ = 25ºC  
0.6  
20  
40  
60  
80 100 120 140 160 180  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXFH 69N30P  
IXFK 69N30P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
4
4.5  
5
5.5  
6
6.5  
7
0
20  
40  
60  
80  
100  
120  
140  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
200  
VDS = 150V  
ID = 34.5A  
G = 10mA  
180  
160  
140  
120  
100  
80  
I
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2 1.3  
0
20  
40  
60  
80  
100 120 140 160  
Q G - nanoCoulombs  
VS D - Volts  
Fig. 12. Forward-Bias Safe  
Operating Area  
Fig. 11. Capacitance  
1000  
10000  
f = 1MHz  
TC = 25ºC  
RDS(on) Limit  
C
C
iss  
25µs  
100  
10  
1
1ms  
1000  
100  
oss  
10ms  
DC  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
V
- Volts  
IXYS reserves the right to changeDlimS its, test conditions, and dimensions.  
IXFH 69N30P  
IXFK 69N30P  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
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