IXFA7N60P3
IXFP7N60P3
Symbol
Test Conditions
Characteristic Values
TO-263 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
4
7
S
RGi
6.0
Ciss
Coss
Crss
705
84
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
4.5
Pins:
td(on)
tr
td(off)
tf
13
12
27
10
ns
ns
ns
ns
Resistive Switching Times
1 - Gate
2,4 - Drain
3 - Source
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Qg(on)
Qgs
13.3
3.7
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
5.1
RthJC
RthCS
0.69 C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V, Note1
7
A
A
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
28
1.4
TO-220 Outline
V
trr
QRM
IRM
250
C
ns
IF = 7A, -di/dt = 25A/μs
0.36
2.60
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Pins: 1 - Gate
3 - Source
2 - Drain
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
