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IXFH80N65X2-4

型号：

IXFH80N65X2-4

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

189 K

下载PDF手册
Advance Technical Information  
X2-Class HiPerFETTM  
Power MOSFET  
VDSS = 650V  
ID25 = 80A  
RDS(on) 38m  
IXFH80N65X2-4  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Ss  
TO-247-4L  
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
Ss  
G
( D )Tab  
TJ = 25C to 150C  
650  
650  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
S = Source G = Gate  
D = Drain  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
Ss = Source Sense  
ID25  
IDM  
TC = 25C  
80  
A
A
TC = 25C, Pulse Width Limited by TJM  
160  
IA  
TC = 25C  
TC = 25C  
20  
3
A
J
Features  
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
International Standard Package  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
890  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Md  
Mounting Torque  
1.13 / 10  
6
Nm/lb.in  
g
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.5  
5.0  
100 nA  
IDSS  
50 A  
TJ = 125C  
3 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
38 m  
DS100748(9/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFH80N65X2-4  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
33  
55  
S
RGi  
0.6  
Ciss  
Coss  
Crss  
8300  
5010  
1.6  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
280  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
1160  
td(on)  
tr  
td(off)  
tf  
32  
24  
70  
11  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 3(External)  
Qg(on)  
Qgs  
140  
50  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
40  
RthJC  
RthCS  
0.14 C/W  
C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
80  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
320  
1.4  
V
trr  
QRM  
IRM  
200  
1.7  
16.7  
ns  
IF = 40A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFH80N65X2-4  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
200  
180  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
9V  
GS  
V
= 10V  
9V  
GS  
8V  
7V  
8V  
7V  
60  
6V  
40  
6V  
5V  
20  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 80A  
D
I
= 40A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 40A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
= 10V  
GS  
BV  
DSS  
T = 125ºC  
J
T = 25ºC  
J
V
GS(th)  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFH80N65X2-4  
Fig. 7. Maximum Drain Current vs.  
Case Temperature  
Fig. 8. Input Admittance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 125ºC  
25ºC  
- 40ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
125ºC  
T
= 125ºC  
J
60  
T
J
= 25ºC  
1.0  
40  
20  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.1  
1.2  
1.3  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
8
V
= 325V  
DS  
C
iss  
I
I
= 40A  
D
G
= 10mA  
6
C
oss  
4
2
10  
= 1 MHz  
f
C
rss  
0
1
0
20  
40  
60  
80  
100  
120  
140  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFH80N65X2-4  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
60  
50  
40  
30  
20  
10  
1000  
100  
10  
R
Limit  
)
DS(  
on  
25µs  
100µs  
1
T = 150ºC  
J
1ms  
T
= 25ºC  
C
Single Pulse  
10ms  
0
0.1  
0
100  
200  
300  
400  
500  
600  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_80N65X2(Z8-S602) 11-19-15  
IXFH80N65X2-4  
TO-247 - 4L Outline  
PINS:  
1,5 - Drain  
2 - Source  
3 - Source Sense  
4 - Gate  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
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