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IXXR100N60B3H1

型号：

IXXR100N60B3H1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

226 K

下载PDF手册
XPTTM 600V IGBT  
GenX3TM w/ Diode  
VCES = 600V  
IC110 = 68A  
VCE(sat) ≤ 1.80V  
tfi(typ) = 150ns  
IXXR100N60B3H1  
(Electrically Isolated Tab)  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
ISOPLUS247TM  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
TJ = 25°C to 150°C, RGE = 1MΩ  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
Isolated Tab  
E
IC25  
IC110  
IF90  
TC = 25°C(Chip Capability)  
TC = 110°C  
TC = 90°C  
145  
68  
54  
A
A
A
G = Gate  
E = Emitter  
C
= Collector  
ICM  
TC = 25°C, 1ms  
440  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
50  
A
600  
mJ  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 200  
A
μs  
W
(RBSOA)  
@VCE ≤ VCES  
Features  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
(SCSOA)  
RG = 10Ω, Non Repetitive  
z
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
2500V~ Electrical Isolation  
Optimized for 10-30kHz Switching  
Square RBSOA  
Avalanche Rated  
Short Circuit Capability  
Anti-Parallel Ultra Fast Diode  
High Current Handling Capability  
PC  
TC = 25°C  
400  
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z
z
z
z
z
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
z
VISOL  
50/60 Hz, 1 Minute  
Mounting Force  
2500  
V~  
FC  
20..120/4.5..27  
5
N/lb.  
g
Weight  
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
5.5  
z
z
50 μA  
4 mA  
z
TJ = 125°C  
TJ = 150°C  
z
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
Welding Machines  
VCE(sat)  
IC = 70A, VGE = 15V, Note 1  
1.50  
1.77  
1.80  
V
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100420B(04/13)  
IXXR100N60B3H1  
ISOPLUS247 (IXXR) Outline  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
gfs  
Cie  
Coes  
Cres  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
22  
40  
S
4860  
475  
83  
pF  
pF  
pF  
s
Qg(on)  
Qge  
Qgc  
143  
37  
nC  
nC  
nC  
IC = 70A, VGE = 15V, VCE = 0.5 • VCES  
60  
td(on)  
tri  
Eon  
td(off)  
tfi  
30  
70  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 70A, VGE = 15V  
1.9  
120  
150  
2.0  
mJ  
ns  
VCE = 360V, RG = 2Ω  
ns  
Note 2  
Eof  
2.8  
mJ  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
32  
60  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 70A, VGE = 15V  
2.3  
150  
200  
2.8  
mJ  
ns  
VCE = 360V, RG = 2Ω  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.31 °C/W  
°C/W  
0.15  
1
- Gate  
Reverse Diode (FRED)  
2,4 - Collector  
3
- Emiiter  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 60A, VGE = 0V, Note 1  
1.6  
1.4  
2.5  
1.8  
V
V
TJ = 150°C  
TJ = 100°C  
IRM  
trr  
8.3  
A
IF = 60A, VGE = 0V,  
-diF/dt = 200A/μs, VR = 300V  
140  
ns  
RthJC  
0.62 °C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
IXXR100N60B3H1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
140  
120  
100  
80  
VGE = 15V  
14V  
VGE = 15V  
13V  
12V  
13V  
11V  
12V  
10V  
9V  
11V  
60  
10V  
9V  
40  
8V  
20  
8V  
7V  
7V  
6V  
0
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.5  
15  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
140  
120  
100  
80  
VGE = 15V  
13V  
VGE = 15V  
11V  
I C = 140A  
12V  
10V  
I C = 70A  
60  
9V  
8V  
40  
20  
I C = 35A  
7V  
5V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
180  
160  
140  
120  
100  
80  
TJ = 25ºC  
TJ = 150ºC  
25ºC  
I C = 140A  
- 40ºC  
60  
70A  
40  
20  
35A  
0
8
9
10  
11  
12  
13  
14  
4
5
6
7
8
9
10  
11  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXXR100N60B3H1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 70A  
I G = 10mA  
25ºC  
150ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
20  
40  
60  
80  
100  
120  
140  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
220  
200  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
60  
TJ = 150ºC  
RG = 2  
C
res  
40  
Ω
dv / dt < 10V / ns  
= 1 MHz  
5
f
20  
0
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
1
1000  
100  
10  
VCE(sat) Limit  
0.1  
25µs  
100µs  
1ms  
0.01  
0.001  
1
TJ = 150ºC  
10ms  
100ms  
1000  
TC = 25ºC  
Single Pulse  
DC  
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Pulse Width - Seconds  
IXXR100N60B3H1  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
5
4
3
2
1
0
5
4
3
2
1
0
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
7
6
5
4
3
2
1
E
E
on - - - -  
VGE = 15V  
E
E
off  
RG = 2  
on - - - -  
off  
TJ = 150ºC , VGE = 15V  
CE = 360V  
Ω ,  
VCE = 360V  
V
TJ = 150ºC  
I C = 100A  
TJ = 25ºC  
I C = 50A  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
340  
300  
260  
220  
180  
140  
100  
340  
300  
260  
220  
180  
140  
100  
5
5
t f i  
t
d(off) - - - -  
E
E
on - - - -  
off  
TJ = 150ºC, GE = 15V  
V
RG = 2  
VGE = 15V  
VCE = 360V  
Ω ,  
4
3
2
1
0
4
3
2
1
0
CE = 360V  
V
I C = 50A  
I C = 100A  
I C = 50A  
I C = 100A  
2
3
4
5
6
7
8
9
10  
11 12  
13 14  
15  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
240  
220  
200  
180  
160  
140  
120  
100  
80  
400  
350  
300  
250  
200  
150  
100  
50  
320  
tf i  
t
d(off) - - - -  
t f i  
td(off)  
- - - -  
280  
240  
200  
160  
120  
80  
RG = 2  
, VGE = 15V  
Ω
RG = 2  
,
VGE = 15V  
Ω
VCE = 360V  
VCE = 360V  
I C = 100A  
TJ = 150ºC  
I C = 50A  
TJ = 25ºC  
60  
40  
25  
50  
75  
100  
125  
150  
20  
30  
40  
50  
60  
IC - Amperes  
70  
80  
90  
100  
TJ - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXXR100N60B3H1  
Fig. 20. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
140  
120  
100  
80  
38  
36  
34  
32  
30  
28  
26  
24  
180  
160  
140  
120  
100  
80  
84  
76  
68  
60  
52  
44  
36  
28  
20  
t r i  
td(on) - - - -  
t r i  
td(on) - - - -  
RG = 2  
, VGE = 15V  
Ω
TJ = 150ºC, VGE = 15V  
VCE = 360V  
VCE = 360V  
I C = 100A  
TJ = 150ºC, 25ºC  
60  
I C = 50A  
40  
60  
20  
40  
0
20  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
RG - Ohms  
IC - Amperes  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
37  
tr i  
td(on) - - - -  
, VGE = 15V  
160  
140  
120  
100  
80  
36  
35  
34  
33  
32  
31  
30  
29  
28  
RG = 2  
Ω
VCE = 360V  
I C = 100A  
60  
I C = 50A  
40  
20  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXR100N60B3H1  
Fig. 23 Typ. Reverse Recovery  
Charge Qrr  
Fig. 24 Typ. Peak Reverse  
Current IRM  
Fig. 22 Forward Current IF vs. VF  
Fig. 25 Typ. Dynamic Parameters  
Fig. 26 Typ Recovery Time t  
rr  
Qrr, IRM  
1
K/W  
0.1  
ZthJC  
0.01  
0.001  
DSEP 60-06A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 27. Maximum Transient Thermal Impedance  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXX_100N60B3(7D)12-01-11-B  
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